Forming mesas on an electrostatic chuck

US11699611B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11699611-B2
Application numberUS-202117183179-A
CountryUS
Kind codeB2
Filing dateFeb 23, 2021
Priority dateFeb 23, 2021
Publication dateJul 11, 2023
Grant dateJul 11, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A body of an electrostatic chuck comprises mesas disposed on a polished surface of the body. Each of the mesas comprises an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 Gpa. The body further comprises a sidewall coating disposed over a sidewall of the body. A method for preparing the body comprises polishing the surface of the body and cleaning the polished surface. The method further comprises depositing the mesas by depositing the adhesion layer on the body, the transition layer over the adhesion layer, and the coating layer over the transition layer. Further, the method includes, polishing the mesas.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for preparing a body of an electrostatic chuck, the method comprising: polishing a surface of the body; cleaning the polished surface of the body; depositing first mesas on the polished surface of the body, wherein each of the first mesas comprises: an adhesion layer on the polished surface of the body; a transition layer over the adhesion layer; and a coating layer over the transition layer, wherein the coating layer has a hardness of at least 14 Gpa; and polishing the first mesas to smooth a surface of the first mesas. 2. The method of claim 1 further comprising positioning a mask over the polished surface of the body, wherein the mask comprises apertures, each of the apertures corresponds to a respective one of the first mesas. 3. The method of claim 2 , wherein each of the apertures comprises: an upper portion having a first opening with a first width; a middle portion having a second opening with a second width less than the first width; and a lower portion, wherein the middle portion is between the upper portion and the lower portion. 4. The method of claim 3 , wherein a sidewall of the first opening forms an angle with a surface of the mask, the angle is less than 90 degrees. 5. The method of claim 1 , wherein the surface of the body is polished to generate an average surface roughness of less than or equal to about 4 μm. 6. The method of claim 1 , wherein the coating layer has a hardness of at least 20 Gpa. 7. The method of claim 1 , wherein the coating layer has a hardness of at least 22 Gpa. 8. The method of claim 1 , wherein the coating layer is comprised of an oxynitride material containing about 20 percent to about 40 percent oxygen and about 30 percent to about 50 percent nitrogen as measured by energy dispersive X-Ray analysis (EDX). 9. The method of claim 8 , wherein the oxynitride material is aluminum oxynitride or erbium oxynitride. 10. The method of claim 1 further comprising forming a sidewall coating over a sidewall of the body. 11. The method of claim 10 , wherein the sidewall coating comprises erbium oxynitride. 12. The method of claim 1 further comprising removing second mesas from the body. 13. The method of claim 1 , wherein the coating layer is comprised of an oxynitride material having less than about 20 percent oxygen. 14. The method of claim 13 , wherein the oxynitride material having less than about 20 percent oxygen is aluminum oxynitride or erbium oxynitride. 15. The method of claim 1 , wherein the coating layer is comprised of an oxynitride material having about 20 percent to about 40 percent oxygen. 16. A body of an electrostatic chuck, the body comprising: mesas disposed on a polished surface of the body, each of the mesas comprises: an adhesion layer disposed on the polished surface of the body; a transition layer disposed over the adhesion layer; and a coating layer disposed over the transition layer, wherein the coating layer has a hardness of at least 14 Gpa; and a sidewall coating disposed over a sidewall of the body. 17. The body of claim 16 , wherein the polished surface has an average surface roughness of less than or equal to about 4 μm. 18. The body of claim 16 , wherein the coating layer has a hardness of at least 22 Gpa. 19. The body of claim 16 , wherein the coating layer is comprised of an oxynitride containing about 20 percent to about 40 percent oxygen and about 30 percent to about 50 percent nitrogen as measured by energy dispersive X-Ray analysis (EDX). 20. The body of claim 16 , wherein the coating layer is comprised of an oxynitride material having less than about 20 percent oxygen. 21. The body of claim 20 , wherein the oxynitride material having less than about 20 percent oxygen is aluminum oxynitride or erbium oxynitride. 22. The body of claim 16 , wherein the coating layer is comprised of an oxynitride material having about 20 percent to about 40 percent oxygen. 23. An electrostatic chuck comprising: a body comprising: mesas disposed on a polished surface of the body, each of the mesas comprises: an adhesion layer disposed on the polished surface of the body; a transition layer disposed over the adhesion layer; and a coating layer disposed over the transition layer, wherein the coating layer has a hardness of at least 14 Gpa; and a sidewall coating disposed over a sidewall of the body; and a base attached to the body. 24. The electrostatic chuck of claim 23 , wherein the polished surface has an average surface roughness of less than or equal to about 4 μm. 25. The electrostatic chuck of claim 23 , wherein the coating layer has a hardness of at least 20 Gpa, and is comprised of an oxynitride containing about 20 percent to about 40 percent oxygen, and about 30 percent to about 50 percent nitrogen as measured by energy dispersive X-Ray analysis (EDX). 26. The electrostatic chuck of claim 23 , wherein each of the mesas corresponds a respective to aperture of a plurality of apertures of a mask, each of the plurality of apertures comprises: an upper portion having a first opening with a first width; a middle portion having a second opening with a second width less than the first width; and a lower portion, wherein the middle portion is between the upper portion and the lower portion, wherein a sidewall of the first opening forms an angle with a surface of the mask, the angle is less than 90 degrees. 27. The electrostatic chuck of claim 23 , wherein the sidewall coating is comprised of an oxynitride material having less than about 20 percent oxygen. 28. The electrostatic chuck of claim 27 , wherein the oxynitride material having less than about 20 percent oxygen is aluminum oxynitride or erbium oxynitride. 29. The electrostatic chuck of claim 23 , wherein the sidewall coating is comprised of an oxynitride material having about 20 percent to about 40 percent oxygen.

Assignees

Inventors

Classifications

  • the substrate being supported substantially horizontally · CPC title

  • H10P72/722Primary

    Details of electrostatic chucks · CPC title

  • Oxynitrides · CPC title

  • Electricity · mapped topic

  • by cleaning or etching · CPC title

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What does patent US11699611B2 cover?
A body of an electrostatic chuck comprises mesas disposed on a polished surface of the body. Each of the mesas comprises an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 Gpa. The body further comprises a sidewall coating disp…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H10P72/722. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 11 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 10 related publications on this page (citations in our corpus or others sharing the same primary CPC).