Electrostatic chuck refurbishment

US9669653B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9669653-B2
Application numberUS-201414209967-A
CountryUS
Kind codeB2
Filing dateMar 13, 2014
Priority dateMar 14, 2013
Publication dateJun 6, 2017
Grant dateJun 6, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An indication that an electrostatic chuck has a gas leakage rate that exceeds a leakage threshold is received. A determination is made as to whether a first polishing procedure that polishes surface features on a surface of the electrostatic chuck without removing the surface features would reduce a thickness of the surface features to below a thickness threshold. The electrostatic chuck is polished using the first polishing procedure responsive to determining that the first polishing procedure would not reduce the thickness of the surface features to below the thickness threshold. Responsive to determining that the first polishing procedure would reduce the thickness of the surface features to below the thickness threshold, a second polishing procedure that removes the surface features from the surface of the electrostatic chuck is performed. After the second polishing procedure, new surface features are formed on the surface of the electrostatic chuck.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of refurbishing an electrostatic chuck comprising: receiving an indication that the electrostatic chuck has a gas leakage rate that exceeds a leakage threshold; determining whether a first polishing procedure that polishes surface features on a surface of the electrostatic chuck without removing the surface features would reduce a thickness of the surface features to below a thickness threshold, wherein determining whether the first polishing procedure would reduce the thickness of the surface features to below the thickness threshold comprises: determining a current roughness of the surface features; determining a target roughness of the surface features; determining a thickness removal value based on subtracting the target roughness from the current roughness; determining a thickness of the surface features; computing an estimated post polishing thickness based on subtracting the thickness removal value from the thickness of the surface features; and determining whether the estimated post polishing thickness is below the thickness threshold; and polishing the electrostatic chuck using the first polishing procedure responsive to determining that the first polishing procedure would not reduce the thickness of the surface features to below the thickness threshold; or responsive to determining that the first polishing procedure would reduce the thickness of the surface features to below the thickness threshold, performing the following comprising: polishing the electrostatic chuck using a second polishing procedure that removes the surface features from the surface of the electrostatic chuck; and forming new surface features on the surface of the electrostatic chuck. 2. The method of claim 1 , further comprising: measuring the gas leakage rate; and determining the current roughness of the surface features based on the gas leakage rate. 3. The method of claim 1 , wherein the second polishing procedure comprises: polishing the surface of the electrostatic chuck using a first grit of about 3 microns to about 100 microns under a load of about 15 pounds to about 85 pounds to remove the surface features; and polishing the surface of the electrostatic chuck using a second grit of about 0.5 microns to about 1 microns to reduce a roughness of the surface to about 2-6 microinches before forming the new surface features. 4. The method of claim 1 , wherein the first polishing procedure removes about 1-4 microns from the surface features and the second polishing procedure removes about 10-30 microns from the surface of the electrostatic chuck. 5. The method of claim 1 , further comprising: periodically spraying a slurry comprising an abrasive and a carrier fluid onto a polishing pad used to perform the polishing during the second polishing procedure. 6. The method of claim 1 , wherein determining the current roughness of the surface features comprises applying a model that relates roughness of the surface features to the gas leakage rate to determine the current roughness of the surface features from the gas leakage rate. 7. The method of claim 1 , wherein the leakage threshold is equal to or less than 2 standard cubic centimeters per minute (SCCM). 8. The method of claim 1 , wherein the second polishing procedure is performed without rounding edges of the electrostatic chuck. 9. The method of claim 1 , wherein the second polishing procedure is performed using a polishing pad that comprises a center cutout. 10. The method of claim 1 , further comprising: flowing a fluid through holes in the electrostatic chuck during the second polishing procedure to maintain positive pressure at openings of the holes at the surface of the electrostatic chuck to prevent the holes from becoming clogged. 11. The method of claim 10 , wherein a flow rate for the fluid is approximately 50-150 milliliters per minute. 12. A method of refurbishing an electrostatic chuck comprising: receiving an indication that the electrostatic chuck has a gas leakage rate that exceeds a leakage threshold; determining whether a first polishing procedure that polishes surface features on a surface of the electrostatic chuck without removing the surface features would reduce a thickness of the surface features to below a thickness threshold, wherein determining whether the first polishing procedure would reduce the thickness of the surface features to below the thickness threshold comprises: determining whether the first polishing procedure has been performed at least a threshold number of times; and determining that the first polishing procedure would reduce the thickness of the surface features to below the thickness threshold if the first polishing procedure has been performed at least the threshold number of times; and polishing the electrostatic chuck using the first polishing procedure responsive to determining that the first polishing procedure would not reduce the thickness of the surface features to below the thickness threshold; or responsive to determining that the first polishing procedure would reduce the thickness of the surface features to below the thickness threshold, performing the following comprising: polishing the electrostatic chuck using a second polishing procedure that removes the surface features from the electrostatic chuck; and forming new surface features on a surface of the electrostatic chuck after polishing the electrostatic chuck using the second polishing procedure. 13. The method of claim 12 , wherein the second polishing procedure comprises: polishing the surface of the electrostatic chuck using a first grit of about 3 microns to about 100 microns under a load of about 15 pounds to about 85 pounds to remove the surface features; and polishing the surface of the electrostatic chuck using a second grit of about 0.5 microns to about 1 microns to reduce a roughness of the surface to about 2-6 microinches before forming the new surface features. 14. The method of claim 12 , wherein the first polishing procedure removes about 1-4 microns from the surface features and the second polishing procedure removes about 10-30 microns from the surface of the electrostatic chuck. 15. The method of claim 12 , further comprising: flowing a fluid through holes in the electrostatic chuck during the second polishing procedure to maintain positive pressure at openings of the holes at the surface of the electrostatic chuck to prevent the holes from becoming clogged. 16. The method of claim 12 , wherein the second polishing procedure is performed using a polishing pad that comprises a center cutout. 17. The method of claim 12 , wherein the leakage threshold is equal to or less than 2 standard cubic centimeters per minute (SCCM). 18. The method of claim 12 , wherein the second polishing procedure is performed without rounding edges of the electrostatic chuck. 19. A method of refurbishing an electrostatic chuck comprising: receiving an indication that the electrostatic chuck has a gas leakage rate that exceeds a leakage threshold; determining whether a first polishing procedure that polishes surface features on a surface of the electrostatic chuck without removing the surface features would reduce a thickness of the surface features to below a thickness threshold, wherein determining whether the first polishing procedure would reduce the thickness of the surface features to below the thickness threshold comprises: applying a model that relates roughness of the surface features to the gas leakage rate to determi

Assignees

Inventors

Classifications

  • H10P72/722Primary

    Details of electrostatic chucks · CPC title

  • of conductive or resistive materials · CPC title

  • of semiconductor materials · CPC title

  • Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

  • Etching of wafers, substrates or parts of devices · CPC title

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What does patent US9669653B2 cover?
An indication that an electrostatic chuck has a gas leakage rate that exceeds a leakage threshold is received. A determination is made as to whether a first polishing procedure that polishes surface features on a surface of the electrostatic chuck without removing the surface features would reduce a thickness of the surface features to below a thickness threshold. The electrostatic chuck is pol…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H10P72/722. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 06 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).