Process for the generation of metal-containing films
US-11505562-B2 · Nov 22, 2022 · US
US11655262B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11655262-B2 |
| Application number | US-202217710178-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 31, 2022 |
| Priority date | Dec 20, 2017 |
| Publication date | May 23, 2023 |
| Grant date | May 23, 2023 |
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A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous statewhere A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,E is NR or O,n is 0, 1 or 2, m is 0, 1 or 2, andR′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
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The invention claimed is: 1. A compound of formula (Ia-2)
Deposition of aluminium only · CPC title
characterized by the use of precursors specially adapted for ALD · CPC title
from metal halides · CPC title
Deposition of aluminium only · CPC title
Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers · CPC title
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