Process for the generation of metal-containing films

Patent metadata

Field	Value
Publication number	US-11319332-B2
Application number	US-201816954341-A
Country	US
Kind code	B2
Filing date	Sep 17, 2018
Priority date	Dec 20, 2017
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous statewhere A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,E is NR or O,n is 0, 1 or 2, m is 0, 1 or 2, andR′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

First claim

The invention claimed is:

1. A process for preparing inorganic metal-containing films comprising bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state

wherein A is NR 2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 0, 1 or 2, m is 0, 1 or 2, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

2. The process according to claim 1 , wherein R is methyl, ethyl, tert-butyl, trimethylsilyl or two R form together a five membered ring and R′ is hydrogen.

3. The process according to claim 1 , wherein if E is NR or A is OR, R in NR or OR bears no hydrogen atom in the 1-position.

4. The process according to claim 1 , wherein a metal-containing compound is deposited from the gaseous state onto the solid substrate before bringing it in contact with a compound of general formula (I), (II), (III), or (IV).

5. The process according to claim 4 , wherein the metal-containing compound contains Ti, Ta, Mn, Mo, W, Al, Co, Ga, Ge, Sb, or Te.

6. The process according to claim 4 , wherein the metal-containing compound is a metal halide.

7. The process according to claim 1 , wherein the compound of general formula (I), (II), (III), or (IV) adsorbs to a surface of the solid substrate and the adsorbed compound of general formula (I), (II), (III), or (IV) is decomposed.

8. The process according to claim 4 , wherein the sequence containing bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) and depositing a metal-containing compound is performed at least twice.

9. The process according to claim 1 , wherein the compound of general formula (I) has a molecular weight of not more than 600 g/mol.

10. The process according to claim 1 , wherein the compound of general formula (I) has a vapor pressure at least 1 mbar at a temperature of 200° C.

11. A compound of general formula (I), (II), (III), or (IV)

wherein A is NR 2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,
E is NR or O,
n is 0, 1 or 2, m is 0, 1 or 2, and
R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group wherein at least one E or A contains oxygen or n is 2 or m is 2.

12. The compound according to claim 11 , wherein the compound is a compound of general formula (Ib), (Ic), (Ih), or (Ij)

13. The compound according to claim 10 , wherein R′ is hydrogen and R is methyl, ethyl, tert-butyl or trimethylsilyl, or two R form together a five-membered ring.

Assignees

• Basf Se
• Univ Wayne State

Inventors

• Schweinfurth David Dominique
• Mayr Lukas
• Klenk Sinja Verena
• Weiguny Sabine
• Winter Charles Hartger
• Blakeney Kyle
• Weerathunga Sirikkathuge Nilanka
• Karunaratne Tharindu Malawara Arachchige Nimanthaka

Classifications

• C23C16/08

  from metal halides · CPC title

• C23C16/20

  Deposition of aluminium only · CPC title

• C23C16/32

  Carbides · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/45534 Primary

  Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers · CPC title