Process for the generation of thin inorganic films

Patent metadata

Field	Value
Publication number	US-2016348243-A1
Application number	US-201515114666-A
Country	US
Kind code	A1
Filing date	Jan 22, 2015
Priority date	Jan 27, 2014
Publication date	Dec 1, 2016
Grant date	—

Abstract

The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are independent of each other hydrogen, an alkyl group, or a trialkylsilyl group, n is an integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.

First claim

1 : A process, comprising:
bringing a compound of general formula (I) into a gaseous or aerosol state

and
depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein
R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are independent of each other and represent a hydrogen atom, an alkyl group, or a trialkylsilyl group,
n is an integer from 1 to 3,
M is a metal or semimetal,
X is a ligand which coordinates M, and
m is an integer from 0 to 4.

2 : The process according to claim 1 , wherein the compound of general formula (I) is chemisorbed on the surface of the solid substrate.

3 : The process according to claim 1 , further comprising:
decomposing the deposited compound of general formula (I) by removing all ligands L and X from the deposited compound of general formula (I).

4 : The process according to claim 3 , wherein said decomposing is carried out by exposing the deposited compound of general formula (I) to water, an oxygen plasma, or ozone.

5 : The process according to claim 3 , wherein
said depositing and decomposing are performed at least twice.

6 : The process according to claim 1 , wherein M is Sr, Ba, Ni or Co.

7 : The process according to claim 1 , wherein R 2 and R 5 are independent of each other and represent a hydrogen atom or a methyl group.

8 : A compound of general formula (I)

wherein
R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are independent of each other and represent a hydrogen atom, an alkyl group, or a trialkylsilyl group,
n is an integer from 1 to 3,
M is Sr, Ba, Co, or Ni,
X is a ligand which coordinates M, and
m is an integer from 0 to 4.

9 : The compound according to claim 8 , wherein R 3 and R 4 represent a hydrogen atom.

10 : The compound according to claim 8 , wherein n is 2 and m is 0.

11 : The compound according to claim 8 , wherein R 2 and R 5 are independent of each other and represent a hydrogen atom or a methyl group.

12 . (canceled)

13 : The process according to claim 3 , further comprising:
upon said decomposing, forming an inorganic film on said solid substrate.

Assignees

• Basf Se

Inventors

• Xu Ke
• Schildknecht Christian
• Spielmann Jan
• Frank Juergen
• Blasberg Florian
• Loeffler Daniel
• Gaertner Martin
• Weiguny Sabine
• Schierle-Arndt Kerstin
• Federsel Katharina
• Abels Falko

Classifications

• C07F3/00

  Compounds containing elements of Groups 2 or 12 of the Periodic Table · CPC title

• B01J13/0095

  Preparation of aerosols · CPC title

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C07F15/065

  without a metal-carbon linkage · CPC title

• C07F15/045

  without a metal-carbon linkage · CPC title