Cleaning formulation for removing residues on surfaces

Patent metadata

Field	Value
Publication number	US-11639487-B2
Application number	US-202217979024-A
Country	US
Kind code	B2
Filing date	Nov 2, 2022
Priority date	Dec 6, 2013
Publication date	May 2, 2023
Grant date	May 2, 2023

Abstract

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

First claim

What is claimed is:

1. A cleaning composition, comprising:
hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition;
a chelating agent comprising at least two nitrogen-containing groups, the chelating agent being in an amount of from about 0.01% to about 1% by weight of the composition;
an alkylene glycol; and
water in an amount of at least about 78% by weight of the composition;
wherein the pH of the composition is from about 7.5 to about 11.

2. The composition of claim 1 , wherein the composition is non-corrosive.

3. The composition of claim 1 , wherein the hydroxylamine is in an amount of from about 5% to about 15% by weight of the composition.

4. The composition of claim 1 , wherein the chelating agent further includes a hydroxyl group.

5. The composition of claim 1 , wherein the chelating agent is in an amount of from about 0.01% to about 0.7% by weight of the composition.

6. The composition of claim 1 , wherein the alkylene glycol is in an amount of from about 1% to about 30% by weight of the composition.

7. The composition of claim 1 , further comprising a metal corrosion inhibitor.

8. The composition of claim 7 , wherein the metal corrosion inhibitor comprises a substituted or unsubstituted benzotriazole.

9. The composition of claim 7 , wherein the metal corrosion inhibitor is in an amount of from about 0.05% to about 1% by weight of the composition.

10. The composition of claim 9 , wherein the metal corrosion inhibitor is in an amount of from about 0.2% to about 1% by weight of the composition.

11. The composition of claim 1 , wherein the composition is free of a non-azole corrosion inhibitor.

12. The composition of claim 1 , wherein the water is in an amount of at most about 90% by weight of the composition.

13. The composition of claim 1 , wherein the composition is configured to remove residues from a semiconductor substrate without substantially removing cobalt from the semiconductor substrate.

14. The composition of claim 1 , wherein the composition has a cobalt etch rate of at most 0.8 Angstroms/minute based on materials compatibility evaluation of a blanket cobalt on a silicon substrate at 65° C. for 4 minutes.

15. A method, comprising:
contacting a semiconductor substrate containing post etch residues and/or post ash residues with a cleaning composition of claim 1 ,
wherein the semiconductor substrate comprises an interconnect feature containing cobalt.

16. A cleaning composition, comprising:
hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition;
a chelating agent comprising at least two nitrogen-containing groups and a hydroxyl group, wherein the chelating agent is not a polyaminopolycarboxylic acid and is in an amount of from about 0.01% to about 1% by weight of the composition;
an alkylene glycol; and
water;
wherein the pH of the composition is from about 7.5 to about 11 and the composition has a cobalt etch rate of at most 0.8 Angstroms/minute based on materials compatibility evaluation of a blanket cobalt on a silicon substrate at 65° C. for 4 minutes.

17. The composition of claim 16 , wherein the composition is non-corrosive.

18. The composition of claim 16 , wherein the hydroxylamine is in an amount of from about 5% to about 15% by weight of the composition.

19. The composition of claim 16 , wherein the chelating agent is in an amount of from about 0.01% to about 0.7% by weight of the composition.

20. The composition of claim 16 , wherein the alkylene glycol is in an amount of from about 1% to about 30% by weight of the composition.

21. The composition of claim 16 , further comprising a metal corrosion inhibitor.

22. The composition of claim 21 , wherein the metal corrosion inhibitor comprises a substituted or unsubstituted benzotriazole.

23. The composition of claim 21 , wherein the metal corrosion inhibitor is in an amount of from about 0.05% to about 1% by weight of the composition.

24. The composition of claim 23 , wherein metal corrosion inhibitor is in an amount of from about 0.2% to about 1% by weight of the composition.

25. The composition of claim 16 , wherein the composition is free of a non-azole corrosion inhibitor.

26. The composition of claim 16 , wherein the water is in an amount of at most about 90% by weight of the composition.

27. The composition of claim 16 , wherein the composition is configured to remove residues from a semiconductor substrate, the semiconductor substrate comprises interconnect features containing cobalt, and the composition is configured not to substantially remove cobalt from the semiconductor substrate.

28. A method, comprising:
contacting a semiconductor substrate containing post etch residues and/or post ash residues with a cleaning composition comprising:
hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition;
a chelating agent comprising at least two nitrogen-containing groups, the chelating agent being in an amount of from about 0.01% to about 1% by weight of the composition;
an alkylene glycol; and
water;

wherein the pH of the composition is from about 7.5 to about 11, the composition has a cobalt etch rate of at most 0.8 Angstroms/minute based on materials compatibility evaluation of a blanket cobalt on a silicon substrate at 65° C. for 4 minutes, and the semiconductor substrate comprises an interconnect feature containing cobalt.

29. The composition of claim 1 , wherein the composition is configured to remove residues from a semiconductor substrate, and the semiconductor substrate comprises an interconnect feature containing cobalt.

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Takahashi Tomonori
• Du Bing
• Wojtczak William A
• Dory Thomas
• Kneer Emil A

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P50/287

  by chemical means · CPC title