Method of determining the initial contact point for partial fields and method of shaping a surface

Patent metadata

Field	Value
Publication number	US-11614693-B2
Application number	US-202117364473-A
Country	US
Kind code	B2
Filing date	Jun 30, 2021
Priority date	Jun 30, 2021
Publication date	Mar 28, 2023
Grant date	Mar 28, 2023

Abstract

A system and method for shaping a film on a partial field including determining an initial contact point. Receiving information about: a partial field of a substrate; and an edge of a patternable area of the substrate. Determining a chord that connects intersection vertices of the partial field and the edge. Determining coordinates of a bisecting line, wherein the bisecting line bisects the chord, and the bisecting line is orthogonal to the chord. Determining an initial contact point range on the bisecting line in which a template and formable material on the substrate contact each other. Contacting the formable material in the partial field on the substrate with the template at an initial contact point within the initial contact point range.

First claim

What is claimed is:

1. A method comprising:
receiving information about: a partial field of a substrate; and an edge of a patternable area of the substrate;
determining of an initial contact point includes determining a chord that connects intersection vertices of the partial field and the edge;
the determining of the initial contact point includes determining coordinates of a bisecting line, wherein the bisecting line bisects the chord, and the bisecting line is orthogonal to the chord;
the determining of the initial contact point includes determining an initial contact point range on the bisecting line in which a template and formable material on the substrate contact each other; and
initially contacting the formable material in the partial field on the substrate with the template at the initial contact point within the initial contact point range.

2. The method of claim 1 , wherein an area of the partial field is less than 30% of a full field area of the substrate.

3. The method of claim 1 , further comprising determining control conditions which allow the template to initially contact the formable material at the initial contact point.

4. The method of claim 3 , wherein the control conditions include a pressure applied to a back surface of the template which bows out the template during the initially contacting of the formable material in the partial field on the substrate with the template.

5. The method of claim 3 , wherein the control conditions include a tilt of the template relative to the substrate during the initially contacting of the formable material in the partial field on the substrate with the template.

6. The method of claim 3 , wherein the control conditions during the initially contacting of the formable material in the partial field with the template include a set of control values supplied to a substrate chuck; wherein the substrate chuck deforms a shape of the substrate.

7. The method of claim 1 , wherein the edge of the patternable area is inset from a substrate edge.

8. The method of claim 1 , wherein the substrate is divided into a plurality of fields including a plurality of full fields and a plurality of partial fields, wherein the plurality of partial fields fall into multiple partial field categories, further comprising:
determining the initial contact point for a particular partial field among the plurality of partial fields is based on the partial field category.

9. The method of claim 8 , wherein the partial field category is based on a shape of the partial field.

10. A method of shaping a film on a substrate in a plurality of fields, wherein a subset of fields among the plurality of fields that are categorized as the partial field are shaped using the method of claim 1 , wherein the method further comprises:
adjusting, after the initial contact, the control conditions so that the template contacts all of the formable material in the particular field with the template;
exposing the formable material under the template to actinic radiation after the template and the substrate are substantially parallel to each other;
separating the template from the formable material.

11. A method of manufacturing an article, from a substrate on which a film was shaped according to the method of claim 10 , further comprising:
processing the substrate; and
forming the article from the processed substrate.

12. The method of claim 10 , further comprising increasing a template back pressure that a template chuck uses to bow out the template after the initial contact.

13. The method of claim 1 , wherein the information received includes a layout of a plurality of fields.

14. A system comprising:
one or more memory; and
one or more processors configured to:
receive information about: a template; a partial field of a substrate; and an edge of a patternable area of the substrate;
determine an initial contact point that includes determining a chord that connects intersection vertices of the partial field and the edge;
determine an initial contact point that includes determining coordinates of a bisecting line, wherein the bisecting line bisects the chord, and the bisecting line is orthogonal to the chord;
determine an initial contact point that includes determining an initial contact point range on the bisecting line in which a template and formable material on the substrate contact each other; and
send instructions for a shaping system to contact the formable material in the partial field on the substrate with the template at the initial contact point within the initial contact point range.

15. The system of claim 14 , wherein the processor is further configured to determine control conditions which allow the template to initially contact the formable material at the initial contact point.

16. The system of claim 15 , further comprising:
a template chuck configured to apply a pressure to a back surface of the template which bows out the template; and
wherein the control conditions include the pressure applied during the initial contact of the formable material in the partial field with the template.

17. The system of claim 15 , further comprising:
a plurality of actuators configured to adjust a tilt of the template relative to the substrate; and
wherein the control conditions during the initial contact of the formable material in the partial field with the template includes the tilt.

18. The system of claim 15 , further comprising:
a substrate chuck configured to deform a shape of the substrate; and
wherein the control conditions during the initial contact of the formable material in the partial field with the template include a set of control values supplied to the substrate chuck.

19. The system of claim 14 , wherein the substrate is divided into a plurality of fields including a plurality of full fields and a plurality of partial fields, wherein the plurality of partial fields fall into multiple partial field categories, wherein the processor is further configured to:
determine the initial contact point for a particular partial field among the plurality of partial fields based on the partial field category.

20. The system of claim 19 , wherein the partial field category is based on a shape of the partial field.

Assignees

• Canon Kk

Inventors

• Lu Xiaoming
• Simpson Logan L
• Meissl Mario Johannes

Classifications

• G03F7/7085 Primary

  Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load · CPC title

• G03F7/70516

  Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G03F9/7042

  Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting (non-exposure lithographic processes per se G03F7/0002) · CPC title

• G03F7/705

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title