Patterning of multi-depth optical devices

Patent metadata

Field	Value
Publication number	US-11614685-B2
Application number	US-202117545554-A
Country	US
Kind code	B2
Filing date	Dec 8, 2021
Priority date	Apr 11, 2019
Publication date	Mar 28, 2023
Grant date	Mar 28, 2023

Abstract

Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

First claim

What is claimed is:

1. A method of forming an optical device, comprising:
disposing a resist layer over a device layer disposed directly over a planar top surface of a substrate or an etch stop layer, the device layer having:
a first portion having a first height from the planar top surface of the substrate or the etch stop layer; and
a second portion having a second height different from the first height from the planar top surface of the substrate or the etch stop layer;

forming a plurality of first openings through the resist layer over the first portion of the device layer and exposing a plurality of first device layer segments of the first portion of the device layer;
forming a plurality of second openings through the resist layer over the second portion of the device layer and exposing a plurality of second device layer segments of the second portion of the device layer;
etching the first device layer segments and the second device layer segments to expose at least a portion of the planar top surface; and
forming at least a portion of a plurality of first structures and a plurality of second structures within the optical device, the first structures having a first depth relative to the planar top surface and the second structures having a second depth relative to the planar top surface different than the first depth.

2. The method of claim 1 , further including a hardmask disposed between the resist layer and the device layer.

3. The method of claim 2 , wherein the forming the plurality of first openings and the plurality of second openings through the resist layer further comprises:
patterning the resist layer to form the plurality of first openings and the plurality of second openings; and
etching the hardmask through the plurality of first openings and the plurality of second openings formed by patterning the resist layer to expose the first device layer segments and the second device layer segments.

4. The method of claim 2 , wherein the hardmask is removed after forming the plurality of first structures and the plurality of second structures.

5. The method of claim 1 , wherein the plurality of first structures and the plurality of second structures are at an angle, other than perpendicular, relative to the planar top surface of the substrate.

6. The method of claim 1 , wherein the resist layer over the first portion has a first thickness, the resist layer over the second portion has a second thickness, and the resist layer has a planar resist top surface.

7. The method of claim 1 , wherein etching the first device layer segments and the second device layer segments comprises at least one of ion implantation, ion beam etching, reactive ion etching, plasma etching, and thermal atomic layer etching.

8. The method of claim 1 , wherein the device layer includes titanium dioxide, zinc oxide, tin dioxide, aluminum-doped zinc oxide, fluorine-doped tin oxide, cadmium stannate, niobium oxide, and zinc stannate, silicon nitride, or amorphous silicon containing materials.

9. A method of forming an optical device, comprising:
disposing a resist layer over a device layer disposed directly over a planar top surface of a substrate or an etch stop layer, the device layer having:
a first portion having a first height from the planar top surface of the substrate or the etch stop layer; and
a second portion having a second height from the planar top surface of the substrate or the etch stop layer, the second height different from the first height;

patterning the resist layer to form a plurality of first openings through the resist layer over a plurality of first device layer segments within the first portion of the device layer and a plurality of second openings through the resist layer over a plurality of second device layer segments of the second portion of the device layer;
etching the first device layer segments and the second device layer segments; and
forming at least a portion of a plurality of first structures and a plurality of second structures within the optical device, the first structures having a first depth relative to the planar top surface and the second structures having a second depth relative to the planar top surface different than the first depth.

10. The method of claim 9 , wherein the resist layer has a thickness of about 50 nm to about 300 nm.

11. The method of claim 9 , wherein a height of the device layer is about 20 nm to about 200 nm.

12. The method of claim 9 , wherein after patterning the resist layer, a residual layer is disposed within the first openings and the second openings and the residual layer is removed using a dry etch process.

13. The method of claim 9 , wherein the optical device includes the etch stop layer disposed on top of the substrate and the etch stop layer has a thickness of about 5 nm to about 50 nm.

14. The method of claim 9 , wherein etching the first device layer segments and the second device layer segments exposes the planar top surface of the substrate or the etch stop layer.

15. A method of forming an optical device, comprising:
disposing a planarization layer over a device layer disposed directly over a planar top surface of a substrate, the device layer having:
a first portion having a first height from the planar top surface; and
a second portion having a second height from the planar top surface, the second height different from the first height;

disposing a resist layer over the planarization layer;
patterning the resist layer to form a plurality of first openings through the resist layer over the first portion of the device layer and exposing a plurality of first planarization layer segments of the planarization layer;
patterning the resist layer to form a plurality of second openings through the resist layer over the second portion of the device layer and exposing a plurality of second planarization layer segments of the planarization layer;
etching the exposed plurality of first planarization layer segments and the exposed plurality of second planarization layer segments to expose a plurality of first device layer segments and a plurality of second device layer segments;
exposing at least a portion of the planar top surface by etching the device layer; and
forming at least a portion of a plurality of first structures and a plurality of second structures within the optical device, the first structures having a first depth relative to the planar top surface and the second structures having a second depth relative to the planar top surface, the second depth different than the first depth.

16. The method of claim 15 , wherein the planarization layer is deposited by a liquid material pour casting process, a spin-on coating process, a screen printing process, a doctor blading process, a physical vapor deposition process, a chemical vapor deposition process, a plasma-enhanced chemical vapor deposition process, a flowable chemical vapor deposition process, or an atomic layer deposition process.

17. The method of claim 15 , wherein the plurality of first device layer segments and a plurality of second device layer segments are etched to expose the planar top surface.

18. The method of claim 15 , wherein the planarization layer comprises amorphous silicon containing materials.

19. The method of claim 15 , wherein etching the planarization layer comprises at least one of ion implantation, ion beam etching, reactive ion etching, plasma etching, and thermal atomic layer etching.

20. The method of claim 15 , wherein the planarization layer has a t

Assignees

• Applied Materials Inc

Inventors

• Godet Ludovic
• Chen Chien-An
• Cohen Brian Alexander
• Mcmillan Wayne
• Mcmackin Ian Matthew

Classifications

• G02B5/1857

  using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams · CPC title

• G02B5/0268

  characterized by the fabrication or manufacturing method · CPC title

• G02B2006/12173

  Masking · CPC title

• G02B2006/12107

  Grating · CPC title

• G02B2006/12176

  Etching · CPC title