Optical component having variable depth gratings and method of formation
US-2019258008-A1 · Aug 22, 2019 · US
US10775158B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10775158-B2 |
| Application number | US-201916240301-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 4, 2019 |
| Priority date | Nov 15, 2018 |
| Publication date | Sep 15, 2020 |
| Grant date | Sep 15, 2020 |
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Optical grating components and methods of forming are provided. In some embodiments, a method includes providing an optical grating layer, and forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled trenches disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer. The method may further include delivering light from a light source into the optical grating layer, and measuring at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer.
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What is claimed is: 1. A method of forming an optical grating component, comprising: providing an optical grating layer; forming an optical grating in the optical grating layer, wherein the optical grating comprises a plurality of angled trenches; delivering light from a light source into the optical grating layer; and simultaneously measuring, while the plurality of angled trenches are being formed, at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer. 2. The method of claim 1 , further comprising: comparing a baseline light value to a detected light value of at least one of: the undiffracted portion of the light and the diffracted portion of the light, wherein the baseline light value corresponds to a known angled trench depth; and determining a depth of the plurality of angled trenches based on the comparison of the detected light value to the baseline light value, wherein the detected light value is a light intensity. 3. The method of claim 2 , further comprising: forming a test optical grating in the optical grating layer, wherein the optical grating comprises a second plurality of angled trenches; and measuring at least one of: an undiffracted portion of the light passing by the test optical grating, and a diffracted portion of the light exiting the optical grating layer after engagement with the test optical grating. 4. The method of claim 2 , further comprising measuring a difference, over a period of time, between the light intensity of the undiffracted portion of the light and the light intensity of the diffracted portion of the light. 5. The method of claim 2 , wherein forming the optical grating comprises etching the optical grating layer to form the plurality of angled trenches, and wherein the etching comprises an angled reactive ion etch. 6. The method of claim 5 , further comprising stopping the etching of the optical grating layer when the depth of the plurality of trenches equals a baseline depth. 7. The method of claim 1 , wherein the plurality of angled trenches is disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer. 8. The method of claim 1 , further comprising measuring the undiffracted portion of the light and the diffracted portion of the light while the plurality of angled trenches are being etched. 9. A method of forming an optical grating component, comprising: providing an optical grating layer; delivering a light into the optical grating layer; etching the optical grating layer, while the light is traveling through the optical grating layer, to form an optical grating, the optical grating having a plurality of angled components disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer; and detecting, during formation of the plurality of angled components, at least one of: an undiffracted portion of the light exiting the optical grating layer, and a diffracted portion of the light exiting the optical grating layer. 10. The method of claim 9 , further comprising: comparing a baseline light value to a detected light value of at least one of: the undiffracted portion of the light and the diffracted portion of the light, wherein the predetermined light value corresponds to a known angled component height; determining a height of the plurality of angled components based on the comparison of the predetermined light value and the detected light value; and stopping etching of the optical grating layer when the height of the plurality of angled components is approximately equal to the known angled component height. 11. The method of claim 10 , wherein the detected light value is a light intensity. 12. The method of claim 11 , further comprising measuring a difference, over a period of time, between the light intensity of the undiffracted portion of the light and the light intensity of the diffracted portion of the light. 13. The method of claim 9 , wherein the light is delivered directly into the optical grating layer at a non-zero angle of inclination with respect to a perpendicular to a plane of the optical grating layer. 14. The method of claim 13 , wherein the undiffracted portion of the light is measured to determine an amount of the light lost as a result of the optical grating. 15. The method of claim 9 , wherein the light is delivered into an edge of the optical grating layer. 16. The method of claim 9 , wherein the undiffracted portion of the light continues past the optical grating and exits the optical grating layer at a first exit point, and wherein the diffracted portion of the light changes direction at the optical grating and exits the optical grating layer at a second exit point.
Diffraction gratings {(holographic optical elements G02B5/32, G03H; integrally combined with optical fibres G02B6/02057; for coupling light guides G02B6/34; integrally combined with optical integrated light guides G02B6/12; grating systems G02B27/44)} · CPC title
using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams · CPC title
Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title
for measuring depth · CPC title
measurement during deposition or removal of the layer · CPC title
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