Semiconductor device

Patent metadata

Field	Value
Publication number	US-11581439-B2
Application number	US-201916693482-A
Country	US
Kind code	B2
Filing date	Nov 25, 2019
Priority date	Jun 27, 2013
Publication date	Feb 14, 2023
Grant date	Feb 14, 2023

Abstract

To provide a semiconductor device in which a large current can flow. To provide a semiconductor device which can be driven stably at a high driving voltage. The semiconductor device includes a semiconductor layer, a first electrode and a second electrode electrically connected to the semiconductor layer and apart from each other in a region overlapping with the semiconductor layer, a first gate electrode and a second gate electrode with the semiconductor layer therebetween, a first gate insulating layer between the semiconductor layer and the first gate electrode, and a second gate insulating layer between the semiconductor layer and the second gate electrode. The first gate electrode overlaps with part of the first electrode, the semiconductor layer, and part of the second electrode. The second gate electrode overlaps with the semiconductor layer and part of the first electrode, and does not overlap with the second electrode.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor layer including a channel formation region;
a first electrode and a second electrode electrically connected to the semiconductor layer;
a first gate insulating layer and a second gate insulating layer with the semiconductor layer therebetween;
a first gate electrode overlapping with the first electrode, the semiconductor layer, and the second electrode through the first gate insulating layer; and
a second gate electrode overlapping with the semiconductor layer and the first electrode through the second gate insulating layer,
wherein an outer end of the second gate electrode extends beyond an end of the semiconductor layer, and an inner end of the second gate electrode overlaps with the semiconductor layer,
wherein each of the first gate electrode and the second gate electrode has a circular ring shape with an opening, and
wherein, in a top view, the opening of the second gate electrode is larger than the opening of the first gate electrode.

2. The semiconductor device according to claim 1 ,
wherein the first electrode is a drain electrode, and
wherein the second electrode is a source electrode.

3. The semiconductor device according to claim 1 ,
wherein the first electrode is a source electrode, and
wherein the second electrode is a drain electrode.

4. The semiconductor device according to claim 3 , wherein the second gate electrode is configured to receive a potential lower than a potential applied to the source electrode.

5. The semiconductor device according to claim 1 ,
wherein the semiconductor layer has an island shape,
wherein one of the first electrode and the second electrode has a ring shape and an opening of the ring shape overlaps with the semiconductor layer, and
wherein the other of the first electrode and the second electrode is in the opening.

6. The semiconductor device according to claim 1 , wherein the semiconductor layer includes an oxide semiconductor.

7. The semiconductor device according to claim 6 , further comprising:
a first oxide layer between the semiconductor layer and the second gate insulating layer; and
a second oxide layer between the semiconductor layer and the first gate insulating layer,
wherein the first oxide layer and the second oxide layer each contain one or more of metal elements contained in the semiconductor layer.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Kobayashi Yoshiyuki
• Matsubayashi Daisuke
• Shimomura Akihisa
• Ito Daigo

Classifications

• H10D30/6734

  having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs · CPC title

• H10D30/6704

  having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device · CPC title

• H10D30/673

  characterised by the shapes, relative sizes or dispositions of the gate electrodes · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title