Semiconductor device having circular light-blocking layer

Patent metadata

Field	Value
Publication number	US-9449991-B2
Application number	US-201414527915-A
Country	US
Kind code	B2
Filing date	Oct 30, 2014
Priority date	Jul 2, 2010
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and improved reliability. In a transistor including an oxide semiconductor film, insulating films each including a material containing a Group 13 element and oxygen are formed in contact with the oxide semiconductor film, whereby the interfaces with the oxide semiconductor film can be kept in a favorable state. Further, the insulating films each include a region where the proportion of oxygen is higher than that in the stoichiometric composition, so that oxygen is supplied to the oxide semiconductor film; thus, oxygen defects in the oxide semiconductor film can be reduced. Furthermore, the insulating films in contact with the oxide semiconductor film each have a stacked structure so that films each containing aluminum are provided over and under the oxide semiconductor film, whereby entry of water into the oxide semiconductor film can be prevented.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first metal oxide film over a substrate;
a second metal oxide film over the first metal oxide film;
an oxide semiconductor film over the second metal oxide film;
a source electrode and a drain electrode electrically connected to the oxide semiconductor film;
a third metal oxide film over the oxide semiconductor film, the source electrode and the drain electrode;
a fourth metal oxide film over the third metal oxide film;
a light-blocking layer over the fourth metal oxide film;
an interlayer film over the light-blocking layer;
a pixel electrode over and in contact with the interlayer film; and
a conductive layer over and in contact with the interlayer film, and overlapping the oxide semiconductor film and the light-blocking layer,
wherein the light-blocking layer has a circular shape when viewed from a top of the semiconductor device.

2. The semiconductor device according to claim 1 , further comprising a gate electrode below the first metal oxide film.

3. The semiconductor device according to claim 1 , wherein the first metal oxide film, the second metal oxide film, the third metal oxide film, and the fourth metal oxide film each contain a Group 13 element and oxygen.

4. The semiconductor device according to claim 1 , wherein the light-blocking layer includes a resin material mixed with a pigment material, a carbon black, and a titanium black.

5. The semiconductor device according to claim 1 , wherein the light-blocking layer has a curved surface when viewed from a cross-section of the semiconductor device.

6. The semiconductor device according to claim 1 , wherein the semiconductor device is one selected from the group consisting of a laptop personal computer, a portable information terminal, an electronic book reader, a mobile phone, a digital video camera, and a television set.

7. A semiconductor device comprising:
a first metal oxide film over a substrate;
a second metal oxide film over the first metal oxide film;
an oxide semiconductor film over the second metal oxide film;
a source electrode and a drain electrode electrically connected to the oxide semiconductor film;
a third metal oxide film over the oxide semiconductor film, the source electrode and the drain electrode;
a fourth metal oxide film over the third metal oxide film;
a light-blocking layer over the fourth metal oxide film;
an interlayer film over the light-blocking layer;
a pixel electrode over and in contact with the interlayer film; and
a conductive layer over and in contact with the interlayer film, and overlapping the oxide semiconductor film and the light-blocking layer,
wherein the light-blocking layer has a circular shape when viewed from a top of the semiconductor device, and
wherein the conductive layer functions as a gate electrode.

8. The semiconductor device according to claim 7 , further comprising a gate electrode below the first metal oxide film.

9. The semiconductor device according to claim 7 , wherein the first metal oxide film, the second metal oxide film, the third metal oxide film, and the fourth metal oxide film each contain a Group 13 element and oxygen.

10. The semiconductor device according to claim 7 , wherein the light-blocking layer includes a resin material mixed with a pigment material, a carbon black, and a titanium black.

11. The semiconductor device according to claim 7 , wherein the light-blocking layer has a curved surface when viewed from a cross-section of the semiconductor device.

12. The semiconductor device according to claim 7 , wherein the semiconductor device is one selected from the group consisting of a laptop personal computer, a portable information terminal, an electronic book reader, a mobile phone, a digital video camera, and a television set.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10D30/0312

  characterised by the gate electrodes · CPC title

• H10D30/6704 Primary

  having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device · CPC title

• H10D64/68

  characterised by the insulator, e.g. by the gate insulator · CPC title

• H10D30/6739

  Conductor-insulator-semiconductor electrodes · CPC title

• H10D86/60 Primary

  wherein the TFTs are in active matrices · CPC title