Apparatus to reduce polymers deposition

Patent metadata

Field	Value
Publication number	US-11551965-B2
Application number	US-201916657604-A
Country	US
Kind code	B2
Filing date	Oct 18, 2019
Priority date	Dec 7, 2018
Publication date	Jan 10, 2023
Grant date	Jan 10, 2023

Abstract

Implementations of the present disclosure provide a process kit for an electrostatic chuck. In one implementation, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck having a first recess formed in an upper portion of the electrostatic chuck. A process kit surrounds the electrostatic chuck. The process kit includes an inner ring and an outer ring disposed radially outward of the inner ring. The outer ring includes a second recess formed in an upper portion of the upper ring. The inner ring is positioned within and is supported by the first recess and the second recess. An upper surface of the inner ring and an upper surface of the outer ring are co-planar.

First claim

The invention claimed is:

1. A substrate support assembly, comprising:
an electrostatic chuck comprising a first recess formed in an upper portion of the electrostatic chuck; and
a process kit surrounding the electrostatic chuck, wherein the process kit comprises:
an inner ring, wherein an upper surface of the inner ring has a plurality of discontinuous protrusions extending from the upper surface of the inner ring, and wherein the protrusions are disposed symmetrically about a circumference of the inner ring; and
an outer ring disposed radially outward of the inner ring, wherein the outer ring comprises a second recess formed in an upper portion of the outer ring, and the inner ring is positioned within and supported by the first recess and the second recess so that the upper surface of the inner ring and an upper surface of the outer ring are coplanar.

2. The substrate support assembly of claim 1 , wherein the inner ring is fabricated from silicon.

3. The substrate support assembly of claim 1 , wherein the outer ring is fabricated from quartz.

4. The substrate support assembly of claim 1 , further comprising:
a pumping ring disposed over the outer ring.

5. The substrate support assembly of claim 4 , wherein the pumping ring has a plurality of protrusions disposed at a bottom surface of the pumping ring.

6. The substrate support assembly of claim 1 , wherein a top surface of the first recess and a top surface of the second recess are at a same elevation.

7. A substrate support assembly for processing a substrate, the substrate support assembly comprising:
a substrate support;
an electrostatic chuck disposed on the substrate support, wherein the electrostatic chuck comprises a first recess formed in an upper portion of the electrostatic chuck; and
a process kit surrounding the electrostatic chuck, wherein the process kit comprises:
an inner ring, wherein an upper surface of the inner ring has a plurality of discontinuous protrusions extending from the upper surface of the inner ring, and wherein the protrusions are disposed symmetrically about a circumference of the inner ring;
an outer ring disposed radially outward of the inner ring, wherein the outer ring comprises a second recess formed in an upper portion of an upper ring, wherein the inner ring is positioned within and supported by the first recess and the second recess, and an upper surface of the outer ring is higher than the upper surface of the inner ring; and
a plurality of pumping channels formed through the outer ring, wherein the pumping channels are angled downwardly towards a direction away from the inner ring.

8. The substrate support assembly of claim 7 , wherein the inner ring is fabricated from silicon.

9. The substrate support assembly of claim 7 , wherein the outer ring is fabricated from quartz.

10. The substrate support assembly of claim 7 , wherein a longitudinal direction of the pumping channels is at an angle with respect to a direction extending along an outer peripheral surface of the outer ring.

11. The substrate support assembly of claim 10 , wherein the angle is in a range of about 30 degrees to about 88 degrees.

12. The substrate support assembly of claim 7 , further comprising:
a cover ring disposed over the outer ring.

13. The substrate support assembly of claim 12 , wherein the cover ring is fabricated from quartz or silicon.

14. A method of removing particles from a substrate support surface, comprising:
arranging an outer ring, wherein a first upper surface of the outer ring engages a lower surface of an inner ring;
a second upper surface of the outer ring is higher than a top surface of the inner ring, wherein the second upper surface of the outer ring is the top surface of the outer ring; and
the outer ring is disposed radially outward of the inner ring;
symmetrically arranging a plurality of discontinuous protrusions extending from an upper surface of the inner ring for positioning a substrate on a substrate surface; and
forming pumping channels on the outer ring, the pumping channels configured to pump unwanted material away from a substrate support.

15. The method recited in claim 14 , further comprising:
positioning a portion of each pumping channel at an acute angle below a bottom surface of the substrate.

16. The method recited in claim 14 , further comprising:
forming a slanted surface in the outer ring at an acute angle below the top surface of the outer ring.

17. The method recited in claim 14 , wherein the pumping channels are provided through a surface of the outer ring.

18. The method recited in claim 14 , further comprising:
arranging a cover ring above the outer ring.

19. The substrate support assembly of claim 1 , wherein the upper surface of the inner ring and the upper surface of the outer ring are coplanar with a substrate supporting surface of the electrostatic chuck.

20. The substrate support assembly of claim 7 , wherein the upper surface of the inner ring and the upper surface of the outer ring are coplanar with a substrate supporting surface of the electrostatic chuck.

Assignees

• Applied Materials Inc

Inventors

• Nguyen Andrew
• Chang Xue
• Rauf Shahid
• Kenney Jason A

Classifications

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P72/7606 Primary

  characterised by edge clamping, e.g. clamping ring · CPC title

• H01J37/32862

  In situ cleaning of vessels and/or internal parts · CPC title

• H01J37/32623

  Mechanical discharge control means · CPC title