Deposition ring and electrostatic chuck for physical vapor deposition chamber

US9689070B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9689070-B2
Application numberUS-201615216389-A
CountryUS
Kind codeB2
Filing dateJul 21, 2016
Priority dateOct 29, 2010
Publication dateJun 27, 2017
Grant dateJun 27, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

First claim

Opening claim text (preview).

What is claimed is: 1. A process kit for use in a substrate processing chamber, comprising: a deposition ring, comprising: a first cylinder having a first end and a second end; a first annular ring comprising: an inner diameter; an outer diameter; a top surface; and a bottom surface opposite the top surface, wherein the first annular ring is coupled to the second end of the first cylinder by a portion of the top surface adjacent the inner diameter of the first annular ring; a second cylinder coupled at a first end to a portion of the bottom surface adjacent the outer diameter of the first annular ring; a second annular ring comprising: an inner diameter; an outer diameter; a top surface including a raised annular outer pad adjacent the outer diameter of the second annular ring and a raised annular inner pad disposed radially inward of the raised annular outer pad, the raised annular inner pad separated from the raised annular outer pad by a groove; and a bottom surface opposite the top surface, wherein a portion of the top surface adjacent the inner diameter of the second annular ring is coupled to a second end of the second cylinder opposite the first end, and wherein a distance between the first and second ends of the first cylinder is at least a third of a distance between the first end of the first cylinder and the bottom surface of the second annular ring; and a cover ring, comprising: an annular body; a top surface; an inner cylindrical ring; an outer cylindrical ring; a wedge coupled to the annular body, comprising: an inclined top surface; and a projecting bulbous brim; and a footing. 2. The process kit of claim 1 , wherein the inclined top surface of the wedge of the cover ring slopes radially inward. 3. The process kit of claim 1 , wherein the raised annular outer pad and the raised annular inner pad of the deposition ring are not in a common plane. 4. The process kit of claim 1 , wherein the first cylinder, the first annular ring, the second cylinder and the second annular ring of the deposition ring comprise a unitary structure. 5. The process kit of claim 1 , wherein the first cylinder, the first annular ring, the second cylinder and the second annular ring of the deposition ring comprise a unitary structure. 6. The process kit of claim 1 , wherein the first cylinder of the deposition ring has an inner wall having a diameter between about 11.615 inches and about 11.630 inches. 7. The process kit of claim 1 , wherein the first cylinder of the deposition ring has an outside diameter between about 11.720 and about 11.890 inches. 8. The process kit of claim 7 , wherein the first cylinder of the deposition ring has a height, defined between the first and second end, between about 0.440 inches and about 0.420 inches. 9. The process kit of claim 1 , wherein the first cylinder of the deposition ring has a thickness between about 0.071 to about 0.625 inches. 10. The process kit of claim 1 , wherein the first cylinder of the deposition ring constitutes at least a third of a total thickness of the deposition ring, as defined between the first end of the first cylinder and the bottom surface of the second annular ring. 11. The process kit of claim 1 , wherein a portion of the deposition ring is coated with an Al arc spray. 12. The process kit of claim 1 , wherein the footing of the cover ring is configured to rest upon the raised annular outer pad of the deposition ring. 13. The process kit of claim 1 , wherein the deposition ring remaining surfaces of the deposition ring are disposed below the first end, wherein an outer diameter of the first cylinder of the deposition ring and the first end of the first cylinder of the deposition ring intersect at a notch.

Assignees

Inventors

Classifications

  • characterised by edge profile or support profile · CPC title

  • Electricity · mapped topic

  • Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds · CPC title

  • C23C14/50Primary

    Substrate holders · CPC title

  • Means for minimising impurities in the coating chamber such as dust, moisture, residual gases · CPC title

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Frequently asked questions

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What does patent US9689070B2 cover?
Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the elect…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification C23C14/50. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 27 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).