Wafer processing apparatus and wafer processing method
US-2024395512-A1 · Nov 28, 2024 · US
US9689070B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9689070-B2 |
| Application number | US-201615216389-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 21, 2016 |
| Priority date | Oct 29, 2010 |
| Publication date | Jun 27, 2017 |
| Grant date | Jun 27, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.
Opening claim text (preview).
What is claimed is: 1. A process kit for use in a substrate processing chamber, comprising: a deposition ring, comprising: a first cylinder having a first end and a second end; a first annular ring comprising: an inner diameter; an outer diameter; a top surface; and a bottom surface opposite the top surface, wherein the first annular ring is coupled to the second end of the first cylinder by a portion of the top surface adjacent the inner diameter of the first annular ring; a second cylinder coupled at a first end to a portion of the bottom surface adjacent the outer diameter of the first annular ring; a second annular ring comprising: an inner diameter; an outer diameter; a top surface including a raised annular outer pad adjacent the outer diameter of the second annular ring and a raised annular inner pad disposed radially inward of the raised annular outer pad, the raised annular inner pad separated from the raised annular outer pad by a groove; and a bottom surface opposite the top surface, wherein a portion of the top surface adjacent the inner diameter of the second annular ring is coupled to a second end of the second cylinder opposite the first end, and wherein a distance between the first and second ends of the first cylinder is at least a third of a distance between the first end of the first cylinder and the bottom surface of the second annular ring; and a cover ring, comprising: an annular body; a top surface; an inner cylindrical ring; an outer cylindrical ring; a wedge coupled to the annular body, comprising: an inclined top surface; and a projecting bulbous brim; and a footing. 2. The process kit of claim 1 , wherein the inclined top surface of the wedge of the cover ring slopes radially inward. 3. The process kit of claim 1 , wherein the raised annular outer pad and the raised annular inner pad of the deposition ring are not in a common plane. 4. The process kit of claim 1 , wherein the first cylinder, the first annular ring, the second cylinder and the second annular ring of the deposition ring comprise a unitary structure. 5. The process kit of claim 1 , wherein the first cylinder, the first annular ring, the second cylinder and the second annular ring of the deposition ring comprise a unitary structure. 6. The process kit of claim 1 , wherein the first cylinder of the deposition ring has an inner wall having a diameter between about 11.615 inches and about 11.630 inches. 7. The process kit of claim 1 , wherein the first cylinder of the deposition ring has an outside diameter between about 11.720 and about 11.890 inches. 8. The process kit of claim 7 , wherein the first cylinder of the deposition ring has a height, defined between the first and second end, between about 0.440 inches and about 0.420 inches. 9. The process kit of claim 1 , wherein the first cylinder of the deposition ring has a thickness between about 0.071 to about 0.625 inches. 10. The process kit of claim 1 , wherein the first cylinder of the deposition ring constitutes at least a third of a total thickness of the deposition ring, as defined between the first end of the first cylinder and the bottom surface of the second annular ring. 11. The process kit of claim 1 , wherein a portion of the deposition ring is coated with an Al arc spray. 12. The process kit of claim 1 , wherein the footing of the cover ring is configured to rest upon the raised annular outer pad of the deposition ring. 13. The process kit of claim 1 , wherein the deposition ring remaining surfaces of the deposition ring are disposed below the first end, wherein an outer diameter of the first cylinder of the deposition ring and the first end of the first cylinder of the deposition ring intersect at a notch.
characterised by edge profile or support profile · CPC title
Electricity · mapped topic
Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds · CPC title
Substrate holders · CPC title
Means for minimising impurities in the coating chamber such as dust, moisture, residual gases · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.