Cleaning electroplating substrate holders using reverse current deplating

US11542630B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11542630-B2
Application numberUS-201916715501-A
CountryUS
Kind codeB2
Filing dateDec 16, 2019
Priority dateMar 30, 2012
Publication dateJan 3, 2023
Grant dateJan 3, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.

First claim

Opening claim text (preview).

What is claimed is: 1. A deplating disk for cleaning a plating cell wafer holder assembly, the deplating disk comprising: a perimeter region along a periphery of the deplating disk and comprising a corrosion-resistant conductive material positioned for making electrical contact with a plurality of electrical contacts in the plating cell wafer holder assembly; and an interior region at a center portion of the deplating disk and comprising an insulating material, wherein the corrosion-resistant conductive material of the perimeter region forms a ring around the insulating material of the interior region, wherein the deplating disk is shaped as a circular wafer having a diameter of 300 mm or 450 mm. 2. The deplating disk of claim 1 , wherein the corrosion-resistant conductive material is a noble metal. 3. The deplating disk of claim 1 , wherein the corrosion-resistant conductive material is selected from the group consisting of: titanium, tantalum, vanadium, tungsten, niobium, chromium, and combinations thereof. 4. The deplating disk of claim 1 , wherein the insulating material is polyvinyl chloride (PVC). 5. The deplating disk of claim 1 , wherein the deplating disk comprises a deplating face and an opposite face, wherein the deplating face comprises a step extending away from the opposite face of the deplating disk, wherein the step is at least 1 mm long. 6. The deplating disk of claim 5 , wherein the step is positioned between 0.1-5 mm inward from a perimeter of the deplating disk. 7. The deplating disk of claim 1 , wherein the corrosion-resistant conductive material is formed on a deplating face of the deplating disk. 8. The deplating disk of claim 7 , wherein the insulating material is also formed on the deplating face of the deplating disk, wherein the deplating disk further comprises: an insulated body on which the corrosion-resistant conductive material and the insulating material are formed, wherein the insulated body comprises silicon. 9. The deplating disk of claim 1 , wherein a width of the corrosion-resistant conductive material is between 1 mm and 10 mm. 10. The deplating disk of claim 1 , wherein the deplating disk is configured to remove metallic deposits from the plating cell wafer holder assembly when anodic current is applied to the corrosion-resistant conductive material of the deplating disk.

Assignees

Inventors

Classifications

  • the wafers being placed on a robot blade or gripped by a gripper for conveyance · CPC title

  • Storage means · CPC title

  • Mechanical parts of transfer devices · CPC title

  • C25D17/06Primary

    Suspending or supporting devices for articles to be coated · CPC title

  • C25D17/001Primary

    Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title

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What does patent US11542630B2 cover?
Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical c…
Who is the assignee on this patent?
Novellus Systems Inc
What technology area does this patent fall under?
Primary CPC classification C25D17/06. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 03 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 11 related publications on this page (citations in our corpus or others sharing the same primary CPC).