Composition for etching and manufacturing method of semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-11499073-B2
Application number	US-202017090910-A
Country	US
Kind code	B2
Filing date	Nov 6, 2020
Priority date	Dec 26, 2016
Publication date	Nov 15, 2022
Grant date	Nov 15, 2022

Abstract

The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

First claim

The invention claimed is:

1. A method for forming a cell gate structure, the method comprising:
forming a cell gate structure on a substrate by alternatively stacking a plurality of interlayer insulating layers and a plurality of gate electrode layers;
forming a plurality of holes through the cell gate structure; and
selectively etching a plurality of nitride layers in the cell gate structure by a composition;
wherein the composition for the selective etching comprises:
a first inorganic acid;
a first additive represented by Chemical Formula 1;
a second additive comprising a silane inorganic acid salt produced by reaction between a nitric acid and a second silane compound; and
a solvent;

wherein the silane compound is a compound selected from Chemical Formulas 10, 20, and their combination; the silane inorganic acid salt is represented by Chemical Formula C260-1;

(In Chemical Formula 1: X is O or N; each R 1 to R 6 are each, independently, selected from the group consisting of hydrogen, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C2-C20 alkenyl group, a C3-C20 cycloalkyl group, a C1-C20 aminoalkyl group, a C6-C20 aryl group, a C1-C20 alkyl carbonyl group, a C1-C20 alkyl carbonyloxy group, and a C1-C10 cyano alkyl group; and n 11 is 0 or 1);

(In Chemical Formula 10 and Chemical Formula 20: each R 1 to R 10 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, at least one of R 1 to R 4 is hydrogen, or an alkoxy group having 1-10 carbon atoms, and n is one of the integer numbers from 1 to 10)

(In Chemical Formula C260-1: each R 111 to R 112 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms; each R 113 to R 114 is independently hydrogen; and n 4 is one of the integer numbers from 0 to 2; l 1 is one of integer numbers from 0 to 10; m 1 is 0 or 1).

2. The method of claim 1 , wherein any one of hydrogen of R 111 to R 114 in the Chemical Formula C260-1 is substituted by Chemical Formula C280-1;

(In Chemical Formula 0280-1: each R 131 and R 112 is a coupler coupling to Chemical Formula 0260-1, the other is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms; each R 113 to R 114 is independently hydrogen, or substituted by a substituent represented by Chemical Formula C280-1; n 4 is one of the integer numbers from 0 to 2; l 1 is one of integer numbers from 0 to 10; m 1 is 0 or 1).

3. The method of claim 1 , wherein the silane inorganic acid salt represented by Chemical Formula C260-1 is any one selected from a group consisting of Chemical Formulas 72, 73, 77, 264 and their combination;

(In Chemical Formulas 72, 73, 77, 264: each R 1-1 , R 1-2 , R 1-3 , R 1-4 , R 21 , and R 23 is independently selected from a group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms).

4. The method of claim 1 , wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 99% by weight, the second additive at a proportion of 0.01% to 15% by weight, and the solvent as the balance.

5. A method for forming a cell gate structure, the method comprising:
forming a cell gate structure on a substrate by alternatively stacking a plurality of interlayer insulating layers and a plurality of gate electrode layers;
forming a plurality of holes through the cell gate structure; and
selectively etching a plurality of nitride layers in the cell gate structure by a composition;
wherein the composition for the selective etching comprises:
a first inorganic acid;
a first additive represented by Chemical Formula 1;
a second additive comprising a compound represented by Chemical Formulas 300, 350, and their combination;

(In Chemical Formula 1: X is O or N; R 1 to R 6 each, independently, selected from the group consisting of hydrogen, a C1-C20 alkyl group, a C1-C20 alkoxy group, a C2-C20 alkenyl group, a C3-C20 cycloalkyl group, a C1-C20 aminoalkyl group, a C6-C20 aryl group, a C1-C20 alkyl carbonyl group, a C1-C20 alkyl carbonyloxy group, and a C1-C10 cyano alkyl group; and n 11 is 0 or 1);

(In Chemical Formula 300: each R 1 to R 4 is independently selected from a group consisting of hydrogen atom, halogen atom, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms; and two or three of each R 1 to R 4 is independently a hydroxy group; at least one of R 1 to R 4 is an alkoxy group having 1 to 10 carbon atoms, an amino alkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms);

(In Chemical Formula 350: each R 2 to R 5 is independently selected from a group consisting of hydrogen atom, halogen atom, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms; at least any one of R 2 to R 5 is an alkoxy group having 1 to 10 carbon atoms, or an aminoalkoxy group having 1 to 10 carbon atoms; n is an integer from 1 to 4).

6. The method of claim 5 , wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 99% by weight, the second additive at a proportion of 0.01% to 15% by weight, and the solvent as the balance.

Assignees

• Soulbrain Co Ltd

Inventors

• Park Jae-Wan
• Lim Jung-Hun
• Lee Jin-Uk

Classifications

• H10P95/066

  the removal being a selective chemical etching step, e.g. selective dry etching through a mask · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title