Cleaning composition, cleaning method, and method for manufacturing semiconductor

Patent metadata

Field	Value
Publication number	US-11441101-B2
Application number	US-201716336658-A
Country	US
Kind code	B2
Filing date	Sep 22, 2017
Priority date	Sep 30, 2016
Publication date	Sep 13, 2022
Grant date	Sep 13, 2022

Abstract

A cleaning composition which can remove a layer of interest using a conventional apparatus, such as a coater, a baking furnace and a cleaning chamber, installed in semiconductor manufacturing equipment while preventing the damage or deformation of layers other than the layer of interest, such as a substrate and an interlayer insulation film; a cleaning method using the cleaning composition; and a method for producing a semiconductor employing the cleaning method. A layer of interest formed on a substrate is cleaned with a cleaning composition containing a component capable of decomposing the layer of interest and a film-forming polymer. An example of the layer of interest is a hard mask film. An example of the component is at least one of a basic compound and an acidic compound.

First claim

The invention claimed is:

1. A single cleaning composition for cleaning a layer to be treated, wherein said layer to be treated is formed on a substrate, the single cleaning composition comprising:
a component (A) capable of decomposing the layer to be treated,
a film-forming polymer (B); and
a solvent,
wherein a content of the component (A) in the cleaning composition is 5 to 150% by mass with respect to the total mass of the film-forming polymer (B) and the solvent, and a content of the component (B) is 1 to 30% by mass with respect to the total mass of the film-forming polymer (B) and the solvent,
the component (A) is an acidic compound (A2), and
the acidic compound (A2) is at least one selected from the group consisting of trifluoromethanesulfonic acid, pentafluoroethanesulfonic acid, heptafluoropropanesulfonic acid, and nonafluorobutanesulfonic acid.

2. The cleaning composition according to claim 1 , wherein the layer to be treated is a hardmask film.

3. The cleaning composition according to claim 2 , wherein the hardmask film is a carbon hardmask film.

4. The cleaning composition according to claim 2 , wherein the hardmask film comprises a polymer having ether bonds.

5. The cleaning composition according to claim 2 , wherein the hardmask film comprises elemental fluorine.

6. The cleaning composition according to claim 1 , wherein the film-forming polymer (B) is a film-forming polymer resistant to the component (A).

7. The cleaning composition according to claim 1 , wherein the film-forming polymer (B) is at least one selected from the group consisting of a polymer having a constitutional unit derived from (meth)acrylic acid, a polymer having a constitutional unit derived from a vinyl group-containing compound, and a polysaccharide.

8. The cleaning composition according to claim 1 , wherein the solvent is at least one selected from the group consisting of water and an organic solvent.

9. A cleaning method, comprising forming a coating film by applying the cleaning composition according to claim 1 onto a layer to be treated, laminated on a substrate.

10. The cleaning method according to claim 9 , further comprising heating the coating film.

11. The A cleaning method according to claim 9 , further comprising:
forming a coating film by applying a cleaning composition onto a layer to be treated, laminated on a substrate, the cleaning composition comprising a component (A) capable of decomposing the layer to be treated, a film-forming polymer (B); and a solvent, and
heating the coating film at a temperature of not lower than a glass transition temperature of the film-forming polymer (B) and not lower than a boiling point of the component (A),
wherein a content of the component (A) in the cleaning composition is 5 to 150% by mass with respect to the total mass of the film-forming polymer (B) and the solvent, and a content of the component (B) is 1 to 30% by mass with respect to the total mass of the film-forming polymer (B) and the solvent.

12. A method for manufacturing a semiconductor comprising a cleaning method according to claim 9 .

13. The cleaning composition according to claim 1 , wherein the film-forming polymer (B) is at least one selected from the group consisting of poly(N-vinylacetamide), polyvinylsulfonic acid, polyvinylphosphonic acid, and cross-linking polyacrylic acid.

Assignees

• Tokyo Ohka Kogyo Co Ltd
• Tokyo Electron Ltd

Inventors

• Hirano Isao
• Wakiya Kazumasa
• Terada Shoichi
• Nakamura Junji
• Toshima Takayuki

Classifications

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• G03F7/426

  containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides · CPC title

• C11D1/12

  Sulfonic acids or sulfuric acid esters; Salts thereof · CPC title