3D printed semiconductor package

Patent metadata

Field	Value
Publication number	US-11417540-B2
Application number	US-202017114240-A
Country	US
Kind code	B2
Filing date	Dec 7, 2020
Priority date	Dec 28, 2018
Publication date	Aug 16, 2022
Grant date	Aug 16, 2022

Abstract

In described examples, a method for encapsulating a semiconductor device includes the steps of immersing a layer of the semiconductor device in a liquid encapsulation material, irradiating portions of the liquid encapsulation material to polymerize the liquid encapsulation material, and moving the semiconductor device further from a surface of the liquid encapsulation material proximate to the layer. Immersing the semiconductor device is performed to cover a layer of the device in the liquid encapsulation material. Targeted locations of the liquid encapsulation material covering the layer are irradiated to form solid encapsulation material. The semiconductor device is moved from a surface of the liquid encapsulation material so that a new layer of the semiconductor device and/or of the solid encapsulation material can be covered by the liquid encapsulation material. The irradiating and moving steps are then repeated until a three dimensional structure on the semiconductor device is formed using the solid encapsulation material.

First claim

What is claimed is:

1. A method for encapsulating a semiconductor device, the method comprising:
a) immersing the semiconductor device in a liquid encapsulation material such that a specified layer of the semiconductor device is covered in the liquid encapsulation material;
b) irradiating portions of the liquid encapsulation material covering targeted locations of the specified layer such that the irradiated portions polymerize to form solid encapsulation material fixedly coupled relative to the semiconductor device;
c) moving the semiconductor device further from a surface of the liquid encapsulation material proximate to the specified layer, such that a new specified layer of the semiconductor device and/or of the solid encapsulation material is covered by the liquid encapsulation material; and
d) repeating the steps b) and c) until a specified three dimensional structure is formed by the solid encapsulation material fixedly coupled relative to the semiconductor device.

2. The method of claim 1 , wherein the liquid encapsulation material is a liquid photopolymer resin and the solid encapsulation material is a solid polymerized resin.

3. The method of claim 1 , wherein one or more of the following is formed within the solid encapsulation material: a specified cavity, a specified cavity surrounding a specified object embedded within the specified cavity, a specified microfluidic channel, a hollow tube surrounding a wire bonded to a lead frame and to the semiconductor device, a hole connecting and enabling light to be transmitted between a surface of the semiconductor device and an exterior surface of the solid encapsulation material, an identifier unique to the semiconductor device, or an anti-counterfeit pattern.

4. The method of claim 1 , wherein a button is formed using the solid encapsulation material, with a cavity being formed between the button and a surface of the semiconductor device, the cavity enabling depression of the button to toggle a state of the semiconductor device.

5. The method of claim 1 , wherein the immersing and the moving include either lowering the semiconductor device beneath a liquid encapsulation material-atmosphere interface, or moving the semiconductor device away from an interface between the liquid encapsulation material and a wall of a basin containing the liquid encapsulation material.

6. The method of claim 1 , wherein a wall of a basin containing the liquid encapsulation material includes an O 2 -permeable material, and/or a material selected to inhibit polymerization of the liquid encapsulation material.

7. The method of claim 1 , wherein steps a), b), c), and d) are performed with respect to a first basin containing a first liquid encapsulation material, and further comprising repeating steps a), b), c), and d) for each of a plurality of basins, the plurality of basins including the first basin, and wherein each basin in the plurality of basins comprises a liquid encapsulation material differing from the liquid encapsulation material in each other basin of the plurality of basins.

8. The method of claim 1 , wherein the steps a), b), c), and d) are performed to encapsulate multiple semiconductor devices with the solid encapsulation material comprising different functional structures on different ones of the multiple semiconductor devices, the multiple semiconductor devices patterned on a same semiconductor substrate and/or using a same design layout database.

9. The method of claim 1 , further comprising, prior to the step a), pre-treating a surface of the semiconductor device, and/or of a lead frame to which the semiconductor device is attached, with an adhesion promotor selected to improve adhesion of the solid encapsulation material to the surface of the semiconductor device and/or the lead frame.

10. The method of claim 1 , further comprising removing the semiconductor device from the liquid encapsulation material between repetitions of the step a).

11. The method of claim 10 , further comprising, while the semiconductor device is removed from the liquid encapsulation material, draining and capping a cavity formed by the steps a), b), c), and d).

12. A method for encapsulating a semiconductor device, the method comprising:
a) covering a specified layer above a surface of the semiconductor device in liquid encapsulation material;
b) irradiating the liquid encapsulation material in targeted locations such that the liquid encapsulation material polymerizes, only at the targeted locations, into a solid encapsulation material fixedly mechanically coupled to contiguous portions of the semiconductor device and of the solid encapsulation material; and
c) repeating the steps a) and b) to form a specified three-dimensional shape encapsulation comprising the solid encapsulation material, the encapsulation comprising a three-dimensional shape such that, along at least one line in a direction perpendicular to and above the surface of the semiconductor device, starting from the surface, there is a gas or liquid or solid other than the solid encapsulation material, then the solid encapsulation material.

13. The method of claim 12 , wherein the liquid encapsulation material is a liquid photopolymer resin and the solid encapsulation material is a solid polymerized resin.

14. The method of claim 12 , wherein the three-dimensional shape is such that, along at least one line in a direction perpendicular to and above the surface of the semiconductor device, starting from the surface, there is the solid encapsulation material, then the gas or liquid or solid other than the solid encapsulation material, then the solid encapsulation material.

15. The method of claim 12 , wherein the three-dimensional shape comprises at least one specified cavity, channel or hole in the interior of the three-dimensional shape.

16. A method for encapsulating a semiconductor device, the method comprising:
a) imaging a surface of the semiconductor device, and comparing results of the imaging to a design layout database of the semiconductor device to determine as-written locations of semiconductor device features;
b) applying a layer of liquid encapsulation material to a surface of a semiconductor device;
c) modifying intensity of energy to be used, duration of energy application, and/or locations to be targeted in polymerizing the layer, in dependence on the imaging and the comparing;
d) polymerizing targeted portions of the layer of liquid encapsulation material using targeted applied energy, using the modified energy intensity, duration of energy application, and/or locations produced by the modifying, to form solid encapsulation material mechanically coupled to the semiconductor device; and
e) repeating the steps a), b), and c) to form a specified three-dimensional shape encapsulating the semiconductor device.

17. The method of claim 16 , wherein the liquid encapsulation material is a liquid photopolymer resin and the solid encapsulation material is a solid polymerized resin.

18. The method of claim 16 ,
wherein the imaging includes imaging the solid encapsulation material, and
wherein the comparing includes comparing results of the imaging to a design layout database of the semiconductor device and of the three-dimensional shape to locate placement errors of the solid encapsulation material.

Assignees

• Texas Instruments Inc

Inventors

• Cook Benjamin Stassen
• Revier Daniel Lee

Classifications

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W70/417

  Bonding materials between chips and die pads · CPC title