Processing system for forming layers

Patent metadata

Field	Value
Publication number	US-11414740-B2
Application number	US-202016864949-A
Country	US
Kind code	B2
Filing date	May 1, 2020
Priority date	Jun 10, 2019
Publication date	Aug 16, 2022
Grant date	Aug 16, 2022

Abstract

Embodiments of the present disclosure generally relate to a processing system for forming one or more layers of a photodiode. In one embodiment, the processing system includes a transfer chamber, a plurality of processing chambers, and a controller configured to cause a process to be performed in the processing system. The process includes performing a pre-clean process on a substrate, aligning and placing a first mask on the substrate, depositing a first layer on the substrate, and depositing a second layer on the substrate. The processing system can form layers of a photodiode in a low defect, cost effective, and high utilization manner.

First claim

What is claimed is:

1. A processing system, comprising:
a first transfer chamber;
a plurality of processing chambers coupled to the first transfer chamber; and
a controller configured to cause a process to be performed in the processing system, the process comprising:
aligning and placing a first mask on a substrate, the aligning and placing the first mask on the substrate comprising:
placing the substrate on an alignment stage within a mask alignment chamber;
positioning the first mask over the substrate on the alignment stage; and
aligning the alignment stage and the substrate to the first mask positioned over the substrate by moving the alignment stage;
wherein the alignment stage is movable in each of an X direction, a Y direction, a Z direction, and a θ direction to position and align the substrate with the first mask;

removing the substrate and the first mask from the alignment stage after aligning the first mask;
moving the substrate and the first mask from the mask alignment chamber to a processing chamber; and
depositing a first layer on the substrate through the first mask within the processing chamber, the depositing the first layer comprising:
sublimating a first solid to a first gas; and
flowing the first gas through a showerhead assembly maintained at a first temperature.

2. The processing system of claim 1 , wherein the first gas is flowed through a first delivery portion of the showerhead assembly, and the first delivery portion is maintained at the first temperature, wherein the depositing the first layer is by co-evaporation of the first solid and a second solid, the depositing the first layer further comprising:
sublimating the second solid to a second gas; and
flowing the second gas through a second delivery portion of the showerhead assembly, wherein the second delivery portion is maintained at a second temperature.

3. The processing system of claim 1 , wherein the process further comprises performing a pre-clean process on a substrate and depositing one or more layers on the first layer, while at least one of the one or more layers is deposited by co-evaporation of multiple materials.

4. The processing system of claim 1 , wherein the process further comprises depositing one or more layers on the first layer and at least one of the one or more layers is deposited through a second mask.

5. The processing system of claim 1 , wherein the process further comprises depositing one or more layers on the first layer and the first layer comprises an organic layer.

6. The processing system of claim 5 , wherein the process further comprises depositing a metal oxide layer on the one or more layers.

7. A processing system, comprising:
a first transfer chamber;
a first processing chamber coupled to the first transfer chamber;
a second processing chamber coupled to the first transfer chamber;
one or more pass through chambers coupled to the first transfer chamber;
a second transfer chamber coupled to the one or more pass through chambers;
a third processing chamber coupled to the second transfer chamber;
a fourth processing chamber coupled to the second transfer chamber;
a fifth processing chamber coupled to the second transfer chamber; and
a controller configured to cause a process to be performed in the processing system, the process comprising:
positioning a first mask over a substrate in the third processing chamber, the substrate positioned on an alignment stage and the third processing chamber being a mask alignment chamber;
aligning the alignment stage and the substrate to the first mask positioned over the substrate by moving the alignment stage, wherein the alignment stage is movable in each of an X direction, a Y direction, a Z direction, and a θ direction;
removing the substrate and the first mask from the alignment stage after aligning the first mask;
moving the substrate and the first mask from the mask alignment chamber to the fourth processing chamber; and
depositing a first layer on the substrate through the first mask in the fourth processing chamber.

8. The processing system of claim 7 , wherein the depositing the first layer comprises:
sublimating a first solid to a first gas;
sublimating a second solid to a second gas;
flowing the first gas through a first delivery portion of a showerhead assembly, the first delivery portion is maintained at a first temperature; and
flowing the second gas through a second delivery portion of the showerhead assembly, the second delivery portion is maintained at a second temperature.

9. The processing system of claim 8 , wherein the first temperature is different from the second temperature.

10. The processing system of claim 7 , wherein the process further comprises:
performing a degas process on the substrate in the first processing chamber;
performing a pre-clean process on the substrate in the second processing chamber; and
depositing a second layer in the fifth processing chamber, wherein the second layer is deposited through a second mask.

11. The processing system of claim 10 , wherein the first layer comprises an organic layer.

12. The processing system of claim 11 , wherein the second layer comprises a metal oxide layer.

13. A method, comprising:
placing a substrate on a substrate carrier;
aligning and placing a first mask on the substrate in a processing system, the aligning and placing the first mask on the substrate comprising:
placing the substrate carrier and substrate on an alignment stage within a mask alignment chamber;
positioning the first mask over the substrate on the alignment stage; and
aligning the alignment stage and the substrate to the first mask positioned over the substrate by moving the alignment stage;
wherein the alignment stage is movable in each of an X direction, a Y direction, a Z direction, and a θ direction to position and align the substrate with the first mask; and

removing the substrate and the first mask from the alignment stage after aligning the first mask;
moving the substrate and the first mask from the mask alignment chamber to a processing chamber; and

depositing a first layer on the substrate through the first mask in the processing chamber, the depositing the first layer comprising:
sublimating a first solid to a first gas; and
flowing the first gas through a showerhead assembly maintained at a first temperature.

14. The method of claim 13 , wherein the first gas is flowed through a first delivery portion of the showerhead assembly, and the first delivery portion is maintained at the first temperature, wherein the depositing the first layer is by co-evaporation of the first solid and a second solid, the depositing the first layer further comprising:
sublimating the second solid to a second gas; and
flowing the second gas through a second delivery portion of the showerhead assembly, wherein the second delivery portion is maintained at a second temperature.

15. The method of claim 14 , further comprising performing a pre-clean process on the substrate in the processing system and depositing one or more layers on the first layer, wherein at least one of the one or more layers is deposited through a second mask.

16. The method of claim 14 , further comprising depositing one or more layers on the first layer, wherein the first layer comprises an organic layer.

17. The method of claim 16 , further comprising depositing a metal oxide layer on the one or more layers.

18. A processing system, comprising:
a first transfer chamber;
a plurality of processing chambers coupled to th

Assignees

• Applied Materials Inc

Inventors

• Lerner Alexander N
• Shaviv Roey
• Karazim Michael P
• Moraes Kevin Vincent
• Sansoni Steven V
• Constant Andrew J
• Brodine Jeffrey Allen
• Vellore Kim Ramkumar
• Sade Amikam
• Kumar Niranjan

Classifications

• H10K30/00

  Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation (integrated devices or assemblies of multiple devices H10K39/00, H10K65/00; electrolytic light-sensitive devices H01G9/20) · CPC title

• C23C14/042 Primary

  using masks · CPC title

• C23C14/12 Primary

  Organic material · CPC title

• C23C14/021

  Cleaning or etching treatments · CPC title

• C23C14/566

  using a load-lock chamber · CPC title