Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor

Patent metadata

Field	Value
Publication number	US-2016011499-A1
Application number	US-201514620114-A
Country	US
Kind code	A1
Filing date	Feb 11, 2015
Priority date	Jul 11, 2014
Publication date	Jan 14, 2016
Grant date	—

Abstract

An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80nm and less than 2% reflectivity.

First claim

What is claimed is:

1 . An extreme ultraviolet (EUV) mask blank production system comprising:
a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank including:
a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and
an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80 nm and less than 2% reflectivity.

2 . The system as claimed in claim 1 wherein the EUV mask blank further comprising a capping layer, between the multi-layer stack and the absorber layer, for protecting the multi-layer stack.

3 . The system as claimed in claim 1 wherein the EUV mask blank reflects the EUV light at the wavelength of 13.5 nm includes adjusting a percent of reflectivity by controlling the thickness of the absorber layer.

4 . The system as claimed in claim 1 further comprising:
a substrate handling platform in the substrate handling vacuum chamber for loading the ultra-low expansion substrate; and
wherein the multiple sub-chambers for forming the EUV mask blank includes:
an additional multi-layer stack formed above the ultra-low expansion substrate, and
wherein the multi-layer stack is tuned to reflect the EUV light at a wavelength of 13.5 nm.

5 . The system as claimed in claim 1 further comprising an additional multi-layer stack formed between the ultra-low expansion substrate and the absorber layer, wherein the additional multi-layer stack includes a plurality of the multi-layer stack.

6 . The system as claimed in claim 1 wherein the absorber layer includes a single layer of Nickel (Ni) or Platinum (Pt).

7 . The system as claimed in claim 1 wherein the absorber layer includes a single layer of Silver (Ag), Zinc (Zn), or Tin (Sn).

8 . The system as claimed in claim 1 wherein the absorber layer includes a single layer of Gold (Au), Lead (Pb), or Indium (In).

9 . The system as claimed in claim 1 wherein the absorber layer includes a single layer of Hafnium (Hf), Cadmium (Cd), Bismuth (Bi), Antimony (Sb), or Tellurium (Te).

10 . The system as claimed in claim 1 wherein the absorber layer is in the range of 10 nm to 83 nm thick.

11 . An extreme ultraviolet (EUV) mask blank system comprising:
an ultra-low expansion substrate; a multi-layer stack over the ultra-low expansion substrate; and an absorber layer, over the multi-layer stack, with a thickness of less than 80 nm and less than 2% reflectivity of an extreme ultraviolet (EUV) light at a wavelength of 13.5 nm.

12 . The system as claimed in claim 11 further comprising a capping layer, between the multi-layer stack and the absorber layer, for protecting the multi-layer stack.

13 . The system as claimed in claim 11 further comprising an additional multi-layer stack formed between the ultra-low expansion substrate and the absorber layer, wherein the additional multi-layer stack includes a plurality of the multi-layer stack.

14 . The system as claimed in claim 11 further comprising an additional multi-layer stack formed directly on a planarization layer and the multi-layer stack formed on the additional multi-layer stack.

15 . The system as claimed in claim 11 further comprising an additional multi-layer stack includes up to 60 of the multi-layer stack formed in a vertical stack.

16 . The system as claimed in claim 11 wherein the absorber layer includes a single layer of Nickel (Ni) or Platinum (Pt).

17 . The system as claimed in claim 11 wherein the absorber layer includes a single layer of Silver (Ag), Zinc (Zn), or Tin (Sn).

18 . The system as claimed in claim 11 wherein the absorber layer includes a single layer of Gold (Au), Lead (Pb), or Indium (In).

19 . The system as claimed in claim 11 wherein the absorber layer includes a single layer of Hafnium (Hf), Cadmium (Cd), Bismuth (Bi), Antimony (Sb), or Tellurium (Te).

20 . The system as claimed in claim 11 wherein the absorber layer is in the range of 10 nm to 83 nm thick.

Assignees

• Applied Materials Inc

Inventors

• Hassan Vinayak Vishwanath
• Foad Majeed A
• Beasley Cara
• Hofmann Ralf

Classifications

• G08B25/004

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