Multilayered magnetic thin film stack and nonvolatile memory device having the same

Patent metadata

Field	Value
Publication number	US-9755140-B2
Application number	US-201514710465-A
Country	US
Kind code	B2
Filing date	May 12, 2015
Priority date	Oct 2, 2014
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer.

First claim

The invention claimed is:

1. A multilayered magnetic thin-film stack comprising:
a tunneling harrier layer;
a magnetic pinned layer disposed on a first surface of the tunneling barrier layer; and
a magnetic free layer disposed on a second surface of the tunneling barrier layer, wherein the second surface is opposite to the first surface,
wherein at least one of the magnetic pinned layer and the magnetic free layer comprises a FeZr alloy layer and a first magnetic layer having a (001) body-centered cubic (bcc) structure between the FeZr alloy layer and the tunneling barrier layer,
wherein the FeZr alloy layer has a mixed crystalline phase including bcc Fe and hexagonal close-packed (hcp) Zr,
wherein the FeZr alloy layer has a first surface on which the first magnetic layer is disposed, and a second surface opposite to the first surface of the FeZr alloy layer, and the multilayered magnetic thin-film stack further comprises a second magnetic layer disposed on the second surface of the FeZr alloy layer,
wherein the second magnetic layer comprises a multilayered structure, the multilayered structure comprising a super-lattice structure including at least one non-magnetic metal layer and at least one cobalt (Co)-containing magnetic layer alternately stacked with the at least one non-magnetic metal layer, the at least one non-magnetic metal layer comprising Platinum (Pt), rhodium (Rh), hafnium (Hf), palladium (Pd), tantalum (Ta), osmium (Os), germanium (Ge), iridium Or), gold (Au), silver (Ag), or an alloy thereof, the first magnetic layer and the second magnetic layer being magnetically coupled via the FeZr alloy layer so that a stack comprising the first magnetic layer, the FeZr alloy layer, and the second magnetic layer functions as a ferromagnetic layer, and
wherein the multilayered structure has a face-centered cubic (fcc) (111) close-packed growth crystalline plane.

2. The multilayered magnetic thin-film stack of claim 1 , wherein the tunneling barrier layer comprises aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO), titanium oxide (TiO 2 ), aluminum nitride (AlN), ruthenium oxide (RuO 2 ), strontium oxide (SrO), silicon nitride (SiN), calcium oxide (CaO), hafnium oxide (HfO 2 ), tantalum oxide (Ta 2 O 5 ), zirconium oxide (ZrO 2 ), silicon carbide (SiC), silicon oxide (SiO 2 ), silicon oxynitride (SiO x N y ), or a stack of thin films formed of two or more thereof.

3. The multilayered magnetic thin-film stack of claim 1 , wherein atomic mole ratio of zirconium (Zr) in the FeZr alloy layer is from about 25 atomic % to about 75 atomic %.

4. The multilayered magnetic thin-film stack of claim 1 , wherein average thickness of the FeZr alloy layer is from about 0.2 nm to about 3 nm.

5. The multilayered magnetic thin-film stack of claim 1 , wherein the first magnetic layer comprises a pure iron (Fe), cobalt-iron (CoFe), cobalt-iron-boron (CoFeB), or a stacked layer containing two or more of the same.

6. The multilayered magnetic thin-film stack of claim 1 , wherein the tunneling barrier layer comprises MgO (001), and the first magnetic layer comprises at least one of cobalt-iron-boron (CoFeB) and cobalt-iron (CoFe).

7. A non-volatile memory device comprising the multilayered magnetic thin-film stack of claim 1 .

8. The multilayered magnetic thin-film stack of claim 1 , wherein the second surface of the FeZr alloy layer is interfaced with a first cobalt (Co)-containing magnetic layer of the multilayered structure.

9. A multilayered magnetic thin-film stack comprising:
a ferromagnetic layer including a stack, the stack comprising:
a first magnetic layer and a second magnetic layer adjacent to each other; and a FeZr alloy layer inserted between the first magnetic layer and the second magnetic layer, the FeZr alloy layer structurally decoupling the first magnetic layer and the second magnetic layer from each other, and magnetically coupling the first magnetic layer and the second magnetic layer to each other,
wherein the FeZr alloy layer has a mixed crystalline phase including body-centered cubic (bcc) Fe and hexagonal close-packed (hep) Zr,
wherein the FeZr alloy layer has a first surface on which the first magnetic layer is disposed, and a second surface opposite to the first surface of the FeZr alloy layer, the second magnetic layer being disposed on the second surface of the FeZr alloy layer,
wherein the second magnetic layer comprises a multilayered structure, the multilayered structure comprising a super-lattice structure including at least one non-magnetic metal layer and at least one cobalt (Co)-containing magnetic layer alternately stacked with the at least one non-magnetic metal layer, the at least one non-magnetic metal layer comprising Platinum (Pt), rhodium (Rh), hafnium (Hf), palladium (Pd), tantalum (Ta), osmium (Os), germanium (Get iridium (Irf gold (Au), silver (Ag), or an alloy thereof and
wherein the multilayered structure has a face-centered cubic (fee) (111) close-packed growth crystalline plane.

10. The multilayered magnetic thin-film stack of claim 9 , wherein the second surface of the FeZr alloy layer is interfaced with a first cobalt (Co)-containing magnetic layer of the multilayered structure.

11. The multilayered magnetic thin-film stack of claim 9 , wherein the first magnetic layer has a (001) bcc structure,
wherein the multilayered magnetic thin-film stack further comprises a template layer for crystallization of the first magnetic layer on a surface of the first magnetic layer opposite to the surface of the first magnetic layer contacting the FeZr alloy layer.

12. The multilayered magnetic thin-film stack of claim 11 , wherein the template layer comprises MgO (001).

13. The multilayered magnetic thin-film stack of claim 12 , wherein the multilayered magnetic thin-film stack has perpendicular magnetic anisotropy.

14. The multilayered magnetic thin-film stack of claim 9 , wherein atomic mole ratio of zirconium (Zr) in the FeZr alloy layer is from about 25 atomic % to about 75 atomic %.

15. The multilayered magnetic thin-film stack of claim 9 , wherein average thickness of the FeZr alloy layer is from about 0.2 nm to about 3 nm.

16. The multilayered magnetic thin-film stack of claim 9 , wherein the first magnetic layer comprises a ferromagnetic layer.

17. The multilayered magnetic thin-film stack of claim 10 , wherein the first magnetic layer comprises at least one of CoFeB and CoFe.

18. A non-volatile memory device comprising the multilayered magnetic thin-film stack of claim 9 .

Assignees

• Sk Hynix Inc
• Univ Korea Res & Bus Found

Inventors

• Lim Sang Ho
• Lee Tae Young
• Won Young Chan
• Lee Seong Rae

Classifications

• H01L43/10 Primary

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H01L27/222

  Electricity · mapped topic

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title