Apparatus and method for controlling a flow process material to a deposition chamber

Patent metadata

Field	Value
Publication number	US-11393703-B2
Application number	US-201916442527-A
Country	US
Kind code	B2
Filing date	Jun 16, 2019
Priority date	Jun 18, 2018
Publication date	Jul 19, 2022
Grant date	Jul 19, 2022

Abstract

Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and a second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

First claim

The invention claimed is:

1. An apparatus for controlling a flow of process material to a deposition chamber, comprising:
the deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each comprise an ampoule in fluid communication with the one or more delivery lines through an opening disposed in a sidewall of the ampoule, and the ampoule includes at least a first temperature zone having a plurality of first heaters, the first temperature zone corresponding with a lower portion of each of the sublimators by having the plurality of first heaters surrounding lower portions of the sidewall of the ampoule, and a second temperature zone having one or more second heaters, the second temperature zone corresponding with an upper portion of each of the sublimators by having the one or more second heaters disposed adjacent the opening, surrounding upper portions of the sidewall of the ampoule, and adjacent a top plate of the ampoule,
wherein the one or more delivery lines comprise one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits comprises one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber when process material is present in the one or more delivery lines, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber when process material is present in the one or more delivery lines.

2. The apparatus of claim 1 , wherein the plurality of first heaters comprise a plurality of radiant heat sources, and the one or more second heaters comprise a plurality of second heaters.

3. The apparatus of claim 1 , wherein the one or more second heaters comprise one or more infrared (IR) or broadband radiation heat sources.

4. The apparatus of claim 1 , wherein the heater adjacent the top plate of the ampoule is disposed above the top plate.

5. The apparatus of claim 1 , wherein the deposition chamber comprises an exhaust path downstream of the deposition chamber, wherein the exhaust path divides into a first exhaust flow path and a second exhaust flow path, wherein the first exhaust flow path comprises a pressure valve, and the second exhaust flow path comprises a throttle valve, wherein the one or more conduits connect into the second exhaust flow path at a first junction downstream the throttle valve, wherein a first pump is downstream the first junction, wherein the first exhaust flow path and second exhaust flow path merge at a second junction downstream the pressure valve and first pump, and wherein a second pump is downstream of the second junction.

6. The apparatus of claim 1 , wherein the first heat source comprises a radiant heat source and the second heat source comprises an infrared (IR) or broadband radiation heat source, and wherein the radiant heat source and infrared (IR) or broadband radiation heat source are in different heat zones.

7. The apparatus of claim 1 , wherein the first heat source is configured to heat the ampoule to a temperature of 250 to 350 degrees Celsius, and the second heat source is configured to heat the ampoule to a temperature of 350 to 550 degrees Celsius.

8. The apparatus of claim 1 , wherein the one or more delivery lines further comprises a second valve positioned between one or more conduits and one or more sublimators.

9. The apparatus of claim 1 , wherein the one or more valves control a process volume pressure of the deposition chamber.

10. A method for controlling a flow of process material to a deposition chamber, comprising:
sublimating one or more precursor materials in one or more sublimators to form one or more vapor precursors, wherein the one or more sublimators each comprise an ampoule in fluid communication with one or more delivery lines through an opening, wherein the opening defines a sole gas flow path into or out of an interior volume of the ampoule, and the ampoule includes at least a first temperature zone having a plurality of first heaters, the first temperature zone corresponding with a lower portion of each of the sublimators by having the plurality of first heaters surrounding lower portions of the sidewall of the ampoule, and a second temperature zone having one or more second heaters, the second temperature zone corresponding with an upper portion of each of the sublimators by having the one or more second heaters disposed adjacent the opening, surrounding upper portions of the sidewall of the ampoule, and adjacent a top plate of the ampoule;
flowing the one or more vapor precursors through one or more delivery lines in fluid communication with a deposition chamber; wherein the one or more delivery lines are connected to one or more conduits at a junction between the deposition chamber and one or more sublimators; and
setting one or more valves in the one or more conduits to control a flow of precursor material from the one or more sublimators to the deposition chamber.

11. The method of claim 10 , wherein setting one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein setting one or more valves in a closed position directs the flow of process material into the deposition chamber.

12. The method of claim 10 , wherein the flowing the one or more vapor precursors through one or more delivery lines in fluid communication with a deposition chamber comprises maintaining a temperature of the one or more vapor precursors flowing through one or more delivery lines.

13. The method of claim 10 , wherein the flowing the one or more vapor precursors through one or more delivery lines in fluid communication with a deposition chamber comprises maintaining a temperature of a first vapor precursor at a first temperature as the first vapor precursor flows through a first delivery line, and maintaining the temperature of a second vapor precursor at a second temperature as the second vapor precursor flows through a second delivery line.

14. A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method for controlling a flow of process material to a deposition chamber to be performed, the method as described in claim 10 .

Assignees

• Applied Materials Inc

Inventors

• Lerner Alexander
• Shaviv Roey
• Stout Phillip
• Ranish Joseph M
• Kothnur Prashanth
• Radhakrishnan Satish

Classifications

• H10P72/0431 Primary

  Apparatus for thermal treatment · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• C23C16/303

  Nitrides · CPC title

• C23C16/4557

  Heated nozzles · CPC title