Semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-11380818-B2
Application number	US-202015932000-A
Country	US
Kind code	B2
Filing date	May 14, 2020
Priority date	Dec 3, 2019
Publication date	Jul 5, 2022
Grant date	Jul 5, 2022

Abstract

A semiconductor light emitting device including at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate; a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern.

First claim

What is claimed is:

1. A semiconductor light emitting device, comprising:
at least one light emitting structure on a substrate, the at least one light emitting structure including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate;
a first electrode contacting a substrate-facing surface of the first semiconductor pattern; and
a second electrode at least partially surrounding and contacting a sidewall of the second semiconductor pattern,
wherein the second electrode extends around at least a part of a substrate-facing surface of the first electrode such that the second electrode at least partially overlaps a portion of the first electrode and the first semiconductor pattern in the vertical direction.

2. The semiconductor light emitting device as claimed in claim 1 , further comprising an insulation pattern between the second electrode and sidewalls of the active pattern, the first semiconductor pattern, and the first electrode,
wherein the insulation pattern contacts the second electrode and the sidewalls of the active pattern, the first semiconductor pattern, and the first electrode.

3. The semiconductor light emitting device as claimed in claim 2 , wherein the insulation pattern contacts a sidewall of a portion of the second semiconductor pattern that is proximate to the substrate in the vertical direction.

4. The semiconductor light emitting device as claimed in claim 1 , wherein:
the second semiconductor pattern includes a first portion distal to the substrate in the vertical direction and a second portion proximate to the substrate in the vertical direction, the first portion having a first width in a horizontal direction substantially parallel to the upper surface of the substrate and the second portion having a second width in the horizontal direction that is less than the first width,
the second electrode contacts a sidewall of the first portion of the second semiconductor pattern, and
the second electrode does not contact a sidewall of the second portion of the second semiconductor pattern.

5. The semiconductor light emitting device as claimed in claim 1 , wherein:
the second electrode includes a first portion and a second portion,
the first portion contacts a sidewall of the second semiconductor pattern, and
the second portion extends away from the first portion in a horizontal direction substantially parallel to the upper surface of the substrate.

6. The semiconductor light emitting device as claimed in claim 5 , further comprising:
a first contact plug on the substrate, the first contact plug contacting the first electrode; and
a second contact plug on the substrate, the second contact plug contacting the second portion of the second electrode.

7. The semiconductor light emitting device as claimed in claim 6 , further comprising:
a conductive division pattern on the second portion of the second electrode, the conductive division pattern being electrically connected to the second portion of the second electrode; and
a photo-conversion pattern on each second semiconductor pattern.

8. The semiconductor light emitting device as claimed in claim 7 , wherein:
the at least one light emitting structure includes a plurality of light emitting structures spaced apart from each other in the horizontal direction, and
the second portion of the second electrode electrically connects the first portion of the second electrode that contacts the sidewalls of the second semiconductor patterns.

9. The semiconductor light emitting device as claimed in claim 8 , wherein:
the photo-conversion patterns on the second semiconductor patterns of the plurality of light emitting structures are spaced apart from each other by the conductive division pattern, and
each of the photo-conversion patterns independently converts light from the light emitting structure into a red light, a green light, or a blue light.

10. The semiconductor light emitting device as claimed in claim 1 , wherein the substrate includes a driver integrated circuit (IC) therein.

11. A semiconductor light emitting device, comprising:
light emitting structures spaced apart from each other on a substrate, each of the light emitting structures including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the substrate;
first electrodes contacting a substrate-facing surface of the first semiconductor pattern of each of the light emitting structures; and
second electrodes at least partially surrounding and contacting a sidewall of the second semiconductor pattern of each of the light emitting structures,
wherein the second electrodes extend in a horizontal direction substantially parallel to the upper surface of the substrate to be connected with each other, and
wherein each of the second electrodes extends around at least a part of a substrate-facing surface of a corresponding one of the first electrodes such that each second electrode at least partially overlaps a portion of a corresponding first electrode and a portion of a corresponding first semiconductor pattern in the vertical direction.

12. The semiconductor light emitting device as claimed in claim 11 , further comprising an insulation pattern between each of the second electrodes and corresponding sidewalls of the active pattern, the first semiconductor pattern, and the first electrode,
wherein the insulation pattern contacts each of the second electrodes and the sidewalls of the active pattern, the first semiconductor pattern, and the first electrode.

13. The semiconductor light emitting device as claimed in claim 11 , wherein:
the second semiconductor pattern of each light emitting structure includes a first portion distal to the substrate in the vertical direction and a second portion proximate to the substrate in the vertical direction, the first portion having a first width in the horizontal direction and the second portion having a second width in the horizontal direction that is less than the first width, and
each of the second electrodes contacts a corresponding sidewall of the first portion of the second semiconductor pattern, and does not contact a corresponding sidewall of the second portion of the second semiconductor pattern.

14. The semiconductor light emitting device as claimed in claim 11 , further comprising:
first contact plugs on the substrate, each first contact plug contacting a corresponding one of the first electrodes; and
second contact plugs on the substrate, each second contact plug contacting a corresponding one of the second electrodes.

15. The semiconductor light emitting device as claimed in claim 11 , further comprising:
photo-conversion patterns on respective second semiconductor patterns of the light emitting structures; and
a conductive division pattern surrounding the photo-conversion patterns, the conductive division pattern being electrically connected to the second electrodes.

16. A semiconductor light emitting device, comprising:
light emitting structures spaced apart from each other on a drive IC substrate, each of the light emitting structures including a first semiconductor pattern, an active pattern, and a second semiconductor pattern sequentially stacked in a vertical direction substantially perpendicular to an upper surface of the drive IC substrate;
first electrodes respectively a contacting drive IC substrate-facing surface of the fir

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yang Jongin
• Seong Hankyu
• Sim Sunghyun
• Yeon Jihye
• Yoo Hanul
• Yun Jihoon

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/8506

  Containers · CPC title

• H10H20/831 Primary

  characterised by their shape · CPC title

• H10H20/0364

  of interconnections · CPC title