Light emitting diode

Patent metadata

Field	Value
Publication number	US-10256387-B2
Application number	US-201715663219-A
Country	US
Kind code	B2
Filing date	Jul 28, 2017
Priority date	Dec 21, 2012
Publication date	Apr 9, 2019
Grant date	Apr 9, 2019

Abstract

A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell, and includes an opening to expose a lower semiconductor layer of the first light emitting cell.

First claim

What is claimed is:

1. A light emitting diode, comprising:
a first light emitting cell and a second light emitting cell separated from each other on a substrate;
a first transparent electrode layer electrically connected to the first light emitting cell;
a second transparent electrode layer electrically connected to the second light emitting cell;
an interconnection electrically connecting the first light emitting cell to the second light emitting cell;
a first insulation layer; and
a second insulation layer,
wherein:
the second transparent electrode layer is disposed on an upper surface of the second light emitting cell for connection to the second light emitting cell while at least partially covering a side surface of the second light emitting cell;
the first insulation layer separates the second transparent electrode layer from the side surface of the second light emitting cell,
the first insulation layer comprises an opening configured to expose a lower semiconductor layer of the second light emitting cell,
and the second insulation layer extends from the first insulation layer and is disposed between the interconnection and an upper surface of the first light emitting cell.

2. The light emitting diode of claim 1 , wherein the second insulation layer comprises the same material as the first insulation layer.

3. The light emitting diode of claim 1 , wherein:
the second insulation layer is disposed under the first transparent electrode layer of the first light emitting cell; and
the interconnection is connected to the first transparent electrode layer of the first light emitting cell on the top surface and the side surface of the first light emitting cell.

4. The light emitting diode of claim 1 , wherein the first transparent electrode layer covers three side surfaces of the first light emitting cell.

5. The light emitting diode of claim 4 , wherein a portion of the first transparent electrode layer partially covers a side surface of the second light emitting cell.

6. The light emitting diode of claim 1 , wherein:
each of the first and second light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, and an active layer disposed between the lower semiconductor layer and the upper semiconductor layer;
the first transparent electrode layer is electrically connected to the upper semiconductor layer of the first light emitting cell; and
a first end of the interconnection is electrically connected to the first transparent electrode layer and a second end of the interconnection is electrically connected to the lower semiconductor layer of the second light emitting cell.

7. The light emitting diode of claim 6 , wherein the interconnection is directly connected to the first transparent electrode layer without an insulating material disposed over an entirety of an overlapping region therebetween.

8. The light emitting diode of claim 7 ,
wherein the second insulation layer is disposed below a region to which the first transparent electrode layer and the interconnection are connected to the upper semiconductor layer of the first light emitting cell.

9. The light emitting diode of claim 6 , wherein the first light emitting cell and the second light emitting cell comprise the same structure.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Oh Se Hee
• Kim Mae Yi
• Lee Seom Geun
• Yang Myoung Hak
• Yoon Yeo Jin

Classifications

• H01L33/62 Primary

  Electricity · mapped topic

• H01L2924/00

  Electricity · mapped topic

• H01L33/14

  Electricity · mapped topic

• H01L33/08

  Electricity · mapped topic

• H01L33/42

  Electricity · mapped topic