Light emitting diode
US-9202973-B2 · Dec 1, 2015 · US
Light emitting diode
US9735329B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9735329-B2 |
| Application number | US-201615147619-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 5, 2016 |
| Priority date | Dec 21, 2012 |
| Publication date | Aug 15, 2017 |
| Grant date | Aug 15, 2017 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer disposed on the first and second light emitting cells. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell.
First claim
Opening claim text (preview).
What is claimed is: 1. A light emitting diode, comprising: a first light emitting cell and a second light emitting cell separated from each other on a substrate; a first transparent electrode layer electrically connected to the first light emitting cell; an interconnection electrically connecting the first light emitting cell to the second light emitting cell; and a first insulation layer disposed on the first and second light emitting cells, wherein: the first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell; and the first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell, and further comprising a second insulation layer disposed between the interconnection and the upper surface of the first light emitting cell. 2. The light emitting diode of claim 1 , wherein the second insulation layer comprises the same material as the first insulation layer. 3. The light emitting diode of claim 1 , wherein: the second insulation layer is disposed under the first transparent electrode layer; and the interconnection is connected to the first transparent electrode layer. 4. A light emitting diode, comprising: a first light emitting cell and a second light emitting cell separated from each other on a substrate; a first transparent electrode layer electrically connected to the first light emitting cell; an interconnection electrically connecting the first light emitting cell to the second light emitting cell; and a first insulation layer disposed on the first and second light emitting cells, wherein: the first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell; the first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell; and a portion of the first transparent electrode layer partially covers a side surface of the second light emitting cell. 5. The light emitting diode of claim 1 , wherein: each of the first and second light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, and an active layer disposed between the lower semiconductor layer and the upper semiconductor layer; the first transparent electrode layer is electrically connected to the upper semiconductor layer of the first light emitting cell; and a first end of the interconnection is electrically connected to the first transparent electrode layer and a second end of the interconnection is electrically connected to the lower semiconductor layer of the second light emitting cell. 6. The light emitting diode of claim 5 , wherein the interconnection is directly connected to the first transparent electrode layer without an insulating material disposed over the entirety of an overlapping region therebetween. 7. A light emitting diode, comprising: a first light emitting cell and a second light emitting cell separated from each other on a substrate; a first transparent electrode layer electrically connected to the first light emitting cell; an interconnection electrically connecting the first light emitting cell to the second light emitting cell; and a first insulation layer disposed on the first and second light emitting cells, wherein: the first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell; the first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell; each of the first and second light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, and an active layer disposed between the lower semiconductor layer and the upper semiconductor layer; the first transparent electrode layer is electrically connected to the upper semiconductor layer of the first light emitting cell; a first end of the interconnection is electrically connected to the first transparent electrode layer and a second end of the interconnection is electrically connected to the lower semiconductor layer of the second light emitting cell; and the interconnection is directly connected to the first transparent electrode layer without an insulating material disposed over the entirety of an overlapping region therebetween, and further comprising a second insulation layer disposed on the upper semiconductor layer of the first light emitting cell, wherein the second insulation layer is disposed below the first transparent electrode layer and the interconnection on the upper semiconductor layer of the first light emitting cell. 8. The light emitting diode of claim 5 , wherein the first light emitting cell and the second light emitting cell comprise the same structure.
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9735329B2 cover?
- A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer disposed on the first and secon…
- Who is the assignee on this patent?
- Seoul Viosys Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L33/62. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 15 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).