Light emitting diode and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9287462-B2
Application number	US-201514791824-A
Country	US
Kind code	B2
Filing date	Jul 6, 2015
Priority date	Dec 21, 2012
Publication date	Mar 15, 2016
Grant date	Mar 15, 2016

Abstract

An exemplary embodiment discloses a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other. The light emitting diode also includes a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell. The light emitting diode also includes a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and a first side of insulation layer are connected to each other.

First claim

What is claimed is:

1. A light emitting diode, comprising:
a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other;
a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell;
a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer;
an interconnection electrically connecting the first light emitting cell and the second light emitting cell; and
an insulation layer disposed between the interconnection and a side surface of the first light emitting cell,
wherein the current blocking layer and a first side of the insulation layer are connected to each other.

2. The light emitting diode of claim 1 , wherein the current blocking layer and the insulation layer comprise distributed Bragg reflectors.

3. The light emitting diode of claim 1 , wherein the current blocking layer and the insulation layer are disposed between the first light emitting cell and the interconnection in an entire overlapping area between the first light emitting cell and the interconnection.

4. The light emitting diode of claim 3 , wherein the insulation layer is disposed between the interconnection and the side surface of the second light emitting cell.

5. The light emitting diode of claim 4 , further comprising:
an insulation protective layer disposed on the first light emitting cell and the second light emitting cell, the insulation protective layer being disposed outside an area in which the interconnection is disposed.

6. The light emitting diode of claim 5 , wherein a side surface of the insulation protective layer contacts a side surface of the interconnection on a coplanar surface.

7. The light emitting diode of claim 1 , further comprising:
a first transparent conductive layer disposed between the insulation layer and the interconnection.

8. The light emitting diode of claim 7 , wherein the first transparent conductive layer is connected to the first ZnO layer.

9. The light emitting diode of claim 1 , wherein each of the first and second light emitting cells comprises a lower semiconductor layer, an upper semiconductor layer, and an active layer disposed between the lower semiconductor layer and the upper semiconductor layer,
wherein the first ZnO layer is electrically connected to the upper semiconductor layer, and
wherein the interconnection contacts the first ZnO layer at a first end thereof and the lower semiconductor layer of the second light emitting cell at a second end thereof.

10. The light emitting diode of claim 9 , wherein the interconnection is directly connected to the first ZnO layer over an entire overlapping area therebetween.

11. The light emitting diode of claim 10 , wherein the current blocking layer is disposed at least under the direct connection area between the first ZnO layer and the interconnection.

12. The light emitting diode of claim 9 , wherein the first light emitting cell and the second light emitting cell comprise the same structure.

13. The light emitting diode of claim 1 , wherein the current blocking layer and the insulation layer comprise distributed Bragg reflectors comprising the same structure, and comprise the same material.

14. The light emitting diode of claim 13 , wherein the interconnection is directly connected to the first ZnO layer over an entire overlapping area therebetween.

15. The light emitting diode of claim 13 , wherein the distributed Bragg reflectors are disposed under the interconnection over an entire area of the interconnection.

16. The light emitting diode of claim 1 ,
wherein the second light emitting cell has an inclined side surface, and the interconnection comprises a first connection section connected to the first light emitting cell and a second connection section connected to the second light emitting cell, the first connection section contacting the first ZnO layer within an upper area of the current blocking layer, the second connection section contacting the inclined side surface of the second light emitting cell.

17. A light emitting diode, comprising:
a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting being spaced apart from each other;
a first transparent electrode layer disposed on the first light emitting cell, the first transparent electrode layer being electrically connected to the first light emitting cell;
a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer;
an interconnection electrically connecting the first light emitting cell and the second light emitting cell; and
an insulation layer disposed between the interconnection and a first side surface of the first light emitting cell,
wherein the current blocking layer and the insulation layer are connected to each other;
wherein the first transparent electrode layer is extended to cover a second side surface of the insulation layer, and
wherein the first side surface is opposite to the second side surface.

18. The light emitting diode of claim 17 , wherein at least one of the current blocking layer and the insulation layer comprise distributed Bragg reflectors.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Lee Seom Geun
• Kim Jong Kyu
• Yoon Yeo Jin
• Kim Jae Kwon
• Kim Mae Yi

Classifications

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/0364

  of interconnections · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title