Radical deactivation component, plasma processing apparatus using the same and radical deactivation method

Patent metadata

Field	Value
Publication number	US-11380522-B2
Application number	US-201916416681-A
Country	US
Kind code	B2
Filing date	May 20, 2019
Priority date	May 25, 2018
Publication date	Jul 5, 2022
Grant date	Jul 5, 2022

Abstract

An article for use in a plasma processing apparatus includes a gas supply pipe, and a component disposed in the gas supply pipe. The component is configured to cause radicals of gas passing through the gas supply pipe to be deactivated in the component.

First claim

What is claimed is:

1. A plasma processing apparatus, comprising:
a plasma processing chamber;
at least one instrument:
first and second pipes disposed between the plasma processing chamber and the at least one instrument, the first pipe having a first conduit, the second pipe having a second conduit, the first conduit being in fluid communication with the plasma processing chamber, the second conduit being in fluid communication with the at least one instrument;
an O-ring disposed between the first pipe and the second pipe; and
first and second components at least partially disposed in a space surrounded by the O-ring, the first component having a first engagement portion engaged with the first pipe, the second component having a second engagement portion engaged with the second pipe, a path being formed between the first component and the second component, the path being in fluid communication with the first conduit and the second conduit, the path having a first portion, a second portion and at least one turnaround portion, the first portion being in fluid communication with the first conduit, the second portion being in fluid communication with the second conduit, the at least one turnaround portion being disposed between the first portion and the second portion, the first portion and the second portion extending parallel to the first and second pipes, the first portion including an inlet facing the first conduit and without facing the second conduit, the second portion including an outlet facing the second conduit and without facing the first conduit, the at least one turnaround portion being disposed closer to a central axis of the first and second pipes in a radial direction of the first and second pipes than the inlet.

2. The plasma processing apparatus according to claim 1 , wherein the at least one turnaround portion comprises a plurality of turnaround portions.

3. The plasma processing apparatus according to claim 2 , wherein the first pipe comprises a first flange portion, and the second pipe comprises a second flange portion,
wherein the O-ring is sandwiched between the first flange portion and the second flange portion, and
wherein the first component is attached to the first flange portion, and the second component is attached to the second flange portion.

4. The plasma processing apparatus according to claim 3 , wherein the at least one instrument comprises a pressure measuring instrument configured to measure a pressure in the plasma processing chamber.

5. The plasma processing apparatus according to claim 4 , wherein the pressure measuring instrument comprises a capacitance manometer including a diaphragm.

6. The plasma processing apparatus according to claim 1 wherein the first pipe comprises a first flange portion, and the second pipe comprises a second flange portion, wherein the O-ring is sandwiched between the first flange portion and the second flange portion, and wherein the first component is attached to the first flange portion, and the second component is attached to the second flange portion.

7. The plasma processing apparatus according to claim 6 , wherein the at least one instrument comprises a pressure measuring instrument configured to measure a pressure in the plasma processing chamber.

8. The plasma processing apparatus according to claim 7 , wherein the pressure measuring instrument comprises a capacitance manometer including a diaphragm.

9. The plasma processing apparatus according to claim 7 , wherein the at least one turnaround portion comprises a plurality of turnaround portions.

10. The plasma processing apparatus according to claim 1 wherein the at least one instrument comprises a pressure measuring instrument configured to measure a pressure in the plasma processing chamber.

11. The plasma processing apparatus according to claim 1 wherein the pressure measuring instrument comprises a capacitance manometer including a diaphragm.

12. The plasma processing apparatus according to claim 1 wherein the at least one turnaround portion comprises a plurality of turnaround portions.

13. The plasma processing apparatus according to claim 1 wherein the at least one instrument includes a diaphragm.

14. The plasma processing apparatus according to claim 13 , wherein the first portion is disposed outside of the second portion.

15. The plasma processing apparatus according to claim 14 , wherein a diameter of the first pipe ( 100 a ) is greater than a diameter of the second pipe.

16. The plasma processing apparatus according to claim 1 wherein the first portion is disposed outside of the second portion.

17. The plasma processing apparatus according to 1 wherein a diameter of the first pipe is greater than a diameter of the second pipe.

Assignees

• Tokyo Electron Ltd

Inventors

• Yamagishi Koji
• Sasaki Shota
• Maekawa Shinji
• Yoshikoshi Daisuke

Classifications

• H01J2237/006

  Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, (H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608) · CPC title

• C23C16/509

  using internal electrodes · CPC title

• B01D53/38

  Removing components of undefined structure · CPC title

• C23C16/45544

  characterized by the apparatus · CPC title

• H01J37/3244 Primary

  Gas supply means · CPC title