Film forming apparatus

Patent metadata

Field	Value
Publication number	US-11377739-B2
Application number	US-201916663698-A
Country	US
Kind code	B2
Filing date	Oct 25, 2019
Priority date	Sep 28, 2015
Publication date	Jul 5, 2022
Grant date	Jul 5, 2022

Abstract

A film forming apparatus includes: process container to generate vacuum atmosphere; mounting part to mount substrate; heating part to heat the substrate mounted on the mounting part; gas supply part installed at rear side of the substrate mounted on the mounting part and configured to supply film forming gas toward front side of the substrate along surface of the substrate and flow rate of the film forming gas becomes uniform in width direction of flow of the film forming gas; rotation mechanism to rotate the mounting part about axis orthogonal to the substrate when the film forming gas is supplied to the substrate; film thickness adjustment part to adjust film thickness distribution of film on the substrate in flow direction of the film forming gas when viewed in state where the mounting part is stopped; and exhaust port provided at the front side of the substrate.

First claim

What is claimed is:

1. A film forming apparatus, comprising:
a process container configured to generate a vacuum atmosphere;
a mounting table provided within the process container, and configured to mount a substrate;
a gas supply installed at a rear side of the substrate mounted on the mounting table, and configured to supply a film forming gas through a slit so that the film forming gas flows toward a front side of the substrate along a surface of the substrate over the entire surface of the substrate and so that a flow rate of the film forming gas becomes uniform in a width direction of a flow of the film forming gas;
a rotation mechanism configured to rotate the mounting table about an axis orthogonal to the substrate when the film forming gas is supplied to the substrate, and including a motor;
a film thickness adjustment part configured to adjust a film thickness distribution of a film on the substrate in a flow direction of the film forming gas when viewed in a state in which the mounting table is stopped; and
an exhaust port provided at the front side of the substrate,
wherein the film thickness adjustment part includes a temperature adjuster including a plurality of stationary heaters provided independently of the mounting table at the side of the mounting surface of the mounting table opposite to the substrate, the plurality of stationary heaters individually have gradually decreasing temperatures along the flow direction of the film forming gas, and the substrate is heated by the plurality of stationary heaters while the mounting table is rotated in order to adjust the film thickness distribution of the film on the substrate.

2. The apparatus of claim 1 , wherein the temperature adjuster includes a disc-shaped heating plate installed within an internal space of the mounting table in a spaced-apart relationship with an inner surface of the mounting table.

3. The apparatus of claim 2 , wherein a plurality of rod-shaped heaters extending in the width direction of the flow of the film forming gas is embedded within the disc-shape heating plate.

4. The apparatus of claim 3 , wherein the plurality of rod-shaped heaters is configured so that the temperatures thereof can be independently adjusted.

Assignees

• Tokyo Electron Ltd

Inventors

• Noro Naotaka

Classifications

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/4584 Primary

  the substrate being rotated · CPC title