Method of fine redistribution interconnect formation for advanced packaging applications

US11342256B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11342256-B2
Application numberUS-201916256809-A
CountryUS
Kind codeB2
Filing dateJan 24, 2019
Priority dateJan 24, 2019
Publication dateMay 24, 2022
Grant dateMay 24, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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A method for producing an electrical component is disclosed using a molybdenum adhesion layer, connecting a polyimide substrate to a copper seed layer and copper plated attachment.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for producing an electrical component, comprising: positioning an epoxy substrate; coating at least one side of the epoxy substrate with an adhesion layer comprising molybdenum, the adhesion layer comprising molybdenum being in direct contact with the epoxy substrate; coating the adhesion layer with a copper seed layer, the copper seed layer being in direct contact with the adhesion layer comprising molybdenum; covering at least a portion of the copper seed layer with a coating of photoresist; removing a section of the coating of the photoresist to produce a surface feature; performing a copper plating process wherein the surface feature is filled with copper; removing the photoresist to produce a copper surface that comprises the at least a portion of the copper seed layer that was coated with the photoresist and the copper formed during the copper plating process; after removing the photoresist, etching the copper surface to remove the at least a portion of the copper seed layer that was coated with the photoresist and leave at least a portion of the copper formed during the copper plating process; and etching the adhesion layer exposed after etching the copper surface, wherein the adhesion layer is etched to have a width substantially equal to a width of the surface feature adjacent thereto. 2. The method according to claim 1 , wherein etching the copper surface comprises a wet copper etching. 3. The method according to claim 1 , wherein the removing of the section of the coating of the photoresist is performed through a photoresist developer. 4. The method according to claim 1 , wherein the epoxy substrate is an epoxy film. 5. The method according to claim 1 , wherein the coating on the at least one side of the epoxy substrate with an adhesion layer comprising molybdenum is performed by a sputtering process. 6. The method according to claim 5 , wherein the sputtering process is produced by a magnetron. 7. The method according to claim 1 , wherein the molybdenum is molybdenum disulfide. 8. A method for producing an electrical component, comprising: positioning an epoxy substrate with an adhesion layer containing molybdenum disposed directly on the epoxy substrate and a copper seed layer disposed directly on the adhesion layer; covering at least a portion of the copper seed layer with a coating of photoresist; exposing the coating of photoresist, through a mask, to a radiation source; removing a section of the coating of the photoresist to produce a surface feature transferred from the mask; performing a copper plating process wherein the surface feature is filled with copper; removing the photoresist to produce a copper surface that comprises the at least a portion of the copper seed layer that was coated with the photoresist and the copper formed during the copper plating process; after removing the photoresist, etching the copper surface to remove the at least a portion of the copper seed layer that was coated with the photoresist and leave at least a portion of the copper formed during the copper plating process; and etching the adhesion layer exposed after etching the copper surface, wherein the adhesion layer is etched to have a width substantially equal to a width of the surface feature adjacent thereto. 9. The method according to claim 8 , wherein etching the copper surface comprises a wet copper etching. 10. The method according to claim 8 , wherein the removing of the section of the coating of the photoresist is performed through a photoresist developer. 11. The method according to claim 8 , wherein the epoxy substrate is an epoxy film. 12. The method according to claim 8 , wherein the coating on at least one side of the epoxy substrate with an adhesion layer comprising molybdenum is performed by a sputtering process. 13. The method according to claim 12 , wherein the sputtering process is produced by a magnetron. 14. The method according to claim 8 , wherein the molybdenum is molybdenum disulfide. 15. A method for producing an electrical component, comprising: coating a first surface of an epoxy substrate with an adhesion layer comprising molybdenum, the adhesion layer comprising molybdenum being in direct contact with the first surface of the epoxy substrate; coating the adhesion layer with a copper seed layer, the copper seed layer being in direct contact with the adhesion layer comprising molybdenum; covering at least a portion of the copper seed layer with a coating of photoresist; removing a section of the coating of the photoresist to produce a surface feature; performing a copper plating process wherein the surface feature is filled with copper; removing the photoresist to produce a copper surface that comprises the at least a portion of the copper seed layer that was coated with the photoresist and the copper formed during the copper plating process; after removing the photoresist, etching the copper surface to remove the at least a portion of the copper seed layer that was coated with the photoresist and leave at least a portion of the copper formed during the copper plating process; and etching an exposed surface of the adhesion layer after etching the copper surface to expose the first surface of the epoxy substrate, wherein the adhesion layer is etched to have a width substantially equal to a width of the surface feature adjacent thereto. 16. The method of claim 15 , wherein the molybdenum is molybdenum disulfide. 17. The method of claim 15 , wherein etching the copper surface comprises a wet copper etching. 18. The method of claim 15 , wherein the coating of the first surface of the epoxy substrate with an adhesion layer comprising molybdenum is performed by a sputtering process produced by a magnetron.

Assignees

Inventors

Classifications

  • Organic materials · CPC title

  • Conductive materials thereof · CPC title

  • of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title

  • H10W70/65Primary

    Shapes or dispositions of interconnections · CPC title

  • H10W70/60Primary

    Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

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Frequently asked questions

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What does patent US11342256B2 cover?
A method for producing an electrical component is disclosed using a molybdenum adhesion layer, connecting a polyimide substrate to a copper seed layer and copper plated attachment.
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H10W70/65. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 24 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).