Plasma polymerization coating apparatus and process

Patent metadata

Field	Value
Publication number	US-11339477-B2
Application number	US-201816195537-A
Country	US
Kind code	B2
Filing date	Nov 19, 2018
Priority date	Nov 30, 2016
Publication date	May 24, 2022
Grant date	May 24, 2022

Abstract

Introduced here is a plasma polymerization apparatus. Example embodiments include a reaction chamber in a shape substantially symmetrical to a central axis. Some examples further include a rotation rack in the reaction chamber. The rotation rack may be operable to rotate relative to the reaction chamber about the central axis of the reaction chamber. Examples may further include reactive species discharge mechanisms positioned around a perimeter of the reaction chamber and configured to disperse reactive species into the reaction chamber in a substantially symmetrical manner from the outer perimeter of the reaction chamber toward the central axis of the reaction chamber, such that the reactive species form a polymeric coating on surfaces of the one or more substrates during said dispersion of the reactive species, and a collecting tube positioned along the central axis of the reaction chamber and having an air pressure lower than the reaction chamber.

First claim

What is claimed is:

1. An apparatus for performing plasma polymerization on the surface of one or more substrates, the apparatus comprising:
a reaction chamber that comprises:
a primary rotation rack operably coupled to a primary rotation shaft and configured to rotate along a central axis, the primary rotation rack including one or more arms extending from the primary rotation shaft and away from the central axis;
a secondary rotation rack operably coupled to a secondary rotation shaft and configured to rotate on a secondary axis that is distal from the central axis, the secondary rotation shaft coupled to an arm of the one or more arms extending from the primary rotation shaft; and
one or more substrate platforms coupled to the secondary rotation shaft configured to carry the one or more substrates that are to receive the plasma polymerization coating;

a dispersal mechanism positioned around a perimeter of the reaction chamber, the dispersal mechanism comprising:
at least two discharge cavities evenly spaced around the perimeter of the reaction chamber, wherein each of the at least two discharge cavities comprises a discharge source coupled to a first power source, the discharge source configured to ionize, in each discharge cavity, a carrier gas into plasma that is to be released into the reaction chamber;
a porous electrode placed between the at least two discharge cavities and the primary rotation rack, wherein the porous electrode is coupled to a second power source and is configured to generate plasma in the reaction chamber before or after the surface of the one or more substrate is coated, wherein the porous electrode is shared by the at least two discharge cavities;
a rotation motor configured to rotate the primary rotation shaft and primary rotation rack at a controlled rotation rate, and
wherein the first power source and the second power source are configured to apply one or more power levels to the dispersal mechanism.

2. The apparatus of claim 1 , wherein the dispersal mechanism is configured to disperse reactive species toward the central axis of the reaction chamber, such that the reactive species form a polymeric coating on surfaces of the one or more substrates.

3. The apparatus of claim 2 , wherein the dispersal mechanism is configured to control a dispersal rate of the reactive species in a substantially even manner on the one or more substrates.

4. The apparatus of claim 3 , wherein the dispersal rate of the reactive species is controlled by regulating a rate of the carrier gas that enters the dispersal mechanism for polymerization.

5. The apparatus of claim 4 , wherein the dispersal rate is adjusted to account for a density decrease in the reactive species within the reaction chamber resulting from a deposition of the reactive species on to the one or more substrates and a density increase within the reactive species in the reaction chamber resulting from the reactive species converging toward a center of the chamber such that a density of reactive species across the reaction chamber is uniform.

6. The apparatus of claim 1 , wherein the dispersal mechanism further includes at least two metal grids each positioned between a discharge cavity of the at least two discharge cavities and the reaction chamber to create a pressure differential between the discharge cavity and the reaction chamber, each of the at least two metal grids further configured to reduce or prevent gas backflow from the reaction chamber to the corresponding discharge cavity.

7. The apparatus of claim 6 , wherein the second power source is coupled to a metal grid of the at least two metal grids, the second power source configured to provide a positive electrical charge to the metal grid in pulses, wherein plasma in the corresponding discharge cavity is blocked from entering the reaction chamber during a pulse-off period, and the plasma in the corresponding discharge cavity is passed through to the reaction chamber during a pulse-on period.

8. The apparatus of claim 1 , further comprising:
a collecting tube positioned along the central axis of the reaction chamber and operable to have an air pressure lower than the reaction chamber to collect excess reactive species from the reaction chamber at an exhaust rate.

9. The apparatus of claim 8 , wherein the collecting tube is configured to control the exhaust rate of the excess reactive species.

10. The apparatus of claim 9 , wherein the exhaust rate is adjusted to account for a density decrease in the reactive species within the reaction chamber resulting from a deposition of the reactive species on to the one or more substrates and a density increase within the reactive species in the reaction chamber resulting from the reactive species converging toward a center of the chamber such that a density of reactive species across the reaction chamber is uniform.

11. The apparatus of claim 1 , wherein the reaction chamber includes one or more rack layer, each rack layer holding a plurality of substrates from the one or more substrate platforms.

12. The apparatus of claim 1 , wherein a rotation of the primary rotation rack along the central axis and a rotation of the secondary rotation rack along the secondary axis provides a same rate of spatial movement for each of the one or more substrates during the coating stage in order to achieve uniform coating.

13. The apparatus of claim 1 , wherein the second power source comprises:
a radio frequency power supply coupled to the porous electrode, the radio frequency power supply configured to provide an electrical charge to the porous electrode to produce a treatment plasma, in the pre-treatment stage, to remove impurities from the surface of the one or more substrates.

14. The apparatus of claim 1 , wherein the dispersal mechanism further comprises a vapor pipe connected directly to the reaction chamber to provide a vapor for forming reactive species with the carrier gas, wherein an outlet of the vapor pipe is positioned at a distance from the at least two discharge cavities to provide the vapor directly into the reaction chamber without passing through the at least two discharge cavities.

15. The apparatus of claim 14 , wherein the distance from a discharge cavity of the at least two discharge cavities ranges from 1 to 10 cm.

16. The apparatus of claim 1 , wherein a power level of the second power source is configured to to be higher than a power level of the first power source.

17. The apparatus of claim 1 , wherein a power level of the first power source to be in a range of 2 to 500 W.

18. The apparatus of claim 1 , wherein a power level of the second power source to be greater than 600 W.

Assignees

• Jiangsu Favored Nanotechnology Co Ltd

Inventors

• Zong Jian

Classifications

• B05D3/0493

  using vacuum · CPC title

• C23C16/4584 Primary

  the substrate being rotated · CPC title

• C23C16/0227

  by cleaning or etching · CPC title

• C23C16/4581 Primary

  characterised by material of construction or surface finish of the means for supporting the substrate · CPC title

• B05D1/62

  Plasma-deposition of organic layers (plasma deposition in general C23C14/00, C23C16/00) · CPC title