Dielectric gapfill using atomic layer deposition (ALD), inhibitor plasma and etching

Patent metadata

Field	Value
Publication number	US-11293098-B2
Application number	US-201816032176-A
Country	US
Kind code	B2
Filing date	Jul 11, 2018
Priority date	Jul 11, 2018
Publication date	Apr 5, 2022
Grant date	Apr 5, 2022

Abstract

A method for performing gapfill of features of a substrate including a) arranging a substrate on a substrate support in a processing chamber; b) performing atomic layer deposition (ALD) to deposit film in a feature of the substrate; c) supplying an inhibitor plasma gas to the processing chamber and striking plasma in the processing chamber to inhibit deposition in upper portions of the feature as compared to lower portions of the feature; d) repeating b) N times, where N is an integer greater than one, and repeating c) M of the N times where M is an integer greater than zero and less than or equal to N; e) supplying an etch gas to the processing chamber to etch the film in the feature of the substrate; and f) repeating b) to e) one or more times to gapfill the feature of the substrate.

First claim

What is claimed is:

1. A method comprising:
a) arranging a substrate including a feature on a substrate support in a processing chamber;
b) performing atomic layer deposition (ALD) N times to deposit film in the feature of the substrate in the processing chamber, where Nis an integer greater than one;
c) after performing b) M of the N times, where M is an integer that is greater than zero and less than or equal to N, supplying an inhibitor plasma gas to the processing chamber and striking plasma in the processing chamber to create a passivated surface more on upper portions of the feature as compared to lower portions of the feature to inhibit the atomic layer deposition in the upper portions of the feature as compared to the lower portions of the feature;
d) supplying an etch gas to the processing chamber to etch the film more in the upper portions of the feature than in the lower portions in the feature of the substrate following c); and
e) repeating b) to d) one or more times to gapfill the feature without voids.

2. The method of claim 1 , wherein b) includes:
supplying precursor gas to the processing chamber for a first predetermined period;
evacuating the precursor gas from the processing chamber;
supplying reactant gas to the processing chamber for a second predetermined period; and
evacuating the reactant gas from the processing chamber.

3. The method of claim 1 , further comprising striking plasma during b).

4. The method of claim 1 , further comprising striking plasma during d).

5. The method of claim 1 , further comprising not striking plasma during b).

6. The method of claim 1 , further comprising not striking plasma during d).

7. The method of claim 1 , wherein the inhibitor plasma gas is selected from a group consisting of a nitrogen species, a fluorine species, nitrogen trifluoride (NF 3 ), molecular nitrogen (N 2 ), argon (Ar), helium (He), molecular hydrogen (H 2 ), ammonia (NH 3 ), amines, diols, diamines, aminoalcohols, thiols or combinations thereof.

8. The method of claim 1 , wherein the feature comprises at least one of a via, hole and/or trench.

9. The method of claim 1 , wherein the feature has an aspect ratio that is greater than or equal to 5:1.

Assignees

• Lam Res Corp

Inventors

• Abel Joseph
• Kumar Purushottam
• Van Schravendijk Bart
• Lavoie Adrien

Classifications

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10W20/098 Primary

  by filling between adjacent conductive parts · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title