Selective atomic layer deposition for gapfill using sacrificial underlayer

Patent metadata

Field	Value
Publication number	US-10037884-B2
Application number	US-201615253301-A
Country	US
Kind code	B2
Filing date	Aug 31, 2016
Priority date	Aug 31, 2016
Publication date	Jul 31, 2018
Grant date	Jul 31, 2018

Abstract

Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.

First claim

What is claimed is:

1. A method of processing a substrate comprising one or more features, each of the one or more features comprising a top and a bottom, the method comprising:
(a) receiving the substrate having a sacrificial layer deposited over the one or more features, wherein a thickness of the sacrificial layer near the top of the one or more features is greater than the thickness of the sacrificial layer near the bottom of the one or more features, and wherein there is substantially no deposition of the sacrificial layer at the bottom of the one or more features;
(b) exposing the substrate comprising the sacrificial layer to a precursor for a duration sufficient to adsorb the precursor on the one or more features; and
(c) after exposing the substrate to the precursor, etching the sacrificial layer to remove adsorbed precursor from the top of the one or more features while leaving adsorbed precursor at the bottom of the one or more features.

2. The method of claim 1 , further comprising (d) exposing the substrate to a second reactant reactive with the adsorbed precursor to preferentially deposit a film on sidewalls and the bottom of the one or more features.

3. The method of claim 2 , wherein the substrate is exposed to the second reactant after etching the sacrificial layer.

4. The method of claim 2 , wherein (d) further comprises igniting a plasma.

5. The method of claim 2 , wherein the film is not silicon (Si) nor a silicon oxide (SiOx), and wherein (c) further comprises exposing the substrate to a fluorine-containing gas to etch the sacrificial layer.

6. The method of claim 2 , wherein the film is selected from the group consisting of silicon oxides, boron doped silicon oxides, phosphorus doped silicon oxides, silicon, poly-silicon, silicon carbides, and silicon nitrides.

7. The method of claim 2 , further comprising (e) depositing a second sacrificial layer over the one or more features, wherein the thickness of the second sacrificial layer near the top of the one or more features is greater than the thickness of the second sacrificial layer near the bottom of the one or more features, and wherein there is substantially no deposition of the second sacrificial layer at the bottom of the one or more features.

8. The method of claim 7 , further comprising repeating (b)-(e) in cycles and performing (e) every n cycles, wherein n is an integer greater than or equal to 1.

9. The method of claim 8 , wherein n is an integer greater than or equal to 2.

10. The method of claim 8 , wherein n is 1 and wherein the second sacrificial layer is deposited to an average thickness of about 10 Å.

11. The method of claim 1 , wherein less than about 50 nm of the sacrificial layer is etched in (c).

12. The method of claim 1 , wherein the sacrificial layer comprises carbon and wherein (c) further comprises exposing the substrate to an oxidizing gas to etch the sacrificial layer.

13. The method of claim 1 , wherein the sacrificial layer is deposited by exposing the substrate to a hydrocarbon precursor and igniting a plasma, the hydrocarbon precursor having the formula C X H Y , wherein X is an integer between 2 and 10, and Y is an integer between 2 and 24.

14. The method of claim 1 , wherein the sacrificial layer comprises aluminum and wherein etching the sacrificial layer comprises exposing the substrate to a halogen-containing gas.

15. The method of claim 1 , wherein the sacrificial layer comprises titanium and wherein etching the sacrificial layer comprises exposing the substrate to a halogen-containing gas.

16. The method of claim 1 , wherein etching the sacrificial layer comprises exposing the substrate to chlorine.

17. The method of claim 1 , wherein etching the sacrificial layer comprises igniting a plasma.

18. The method of claim 1 , wherein the sacrificial layer is deposited using a method selected from the group consisting of chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), sputtering, physical vapor deposition (PVD), and spin coating.

19. The method of claim 1 , wherein the thickness of the sacrificial layer near the top of the one or more features in (a) is less than about 1 nm.

20. The method of claim 1 , wherein an aspect ratio of at least one of the one or more features is at least 2:1.

Assignees

• Lam Res Corp

Inventors

• Ou Fung Suong
• Kumar Purushottam
• Lavoie Adrien
• Karim Ishtak
• Qian Jun

Classifications

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P14/6902

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6329

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title