Methods and devices for subtractive self-alignment

Patent metadata

Field	Value
Publication number	US-11257677-B2
Application number	US-202016751691-A
Country	US
Kind code	B2
Filing date	Jan 24, 2020
Priority date	Jan 24, 2020
Publication date	Feb 22, 2022
Grant date	Feb 22, 2022

Abstract

A method of forming an interconnect structure for semiconductor devices is described. The method comprises depositing an etch stop layer on a substrate by physical vapor deposition followed by in situ deposition of a metal layer on the etch stop layer. The in situ deposition comprises flowing a plasma processing gas into the chamber and exciting the plasma processing gas into a plasma to deposit the metal layer on the etch stop layer on the substrate. The substrate is continuously under vacuum and is not exposed to ambient air during the deposition processes.

First claim

What is claimed is:

1. A method of forming an interconnect, the method comprising:
depositing an etch stop layer on a substrate, wherein deposition comprises physical vapor deposition at a temperature in a range of from about 200° C. to about 300° C., the etch stop layer comprising one or more of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), molybdenum (Mo), tungsten (W), and ruthenium (Ru); and
in situ depositing a metal layer on the etch stop layer, wherein the in situ deposition comprises flowing a plasma processing gas into a processing chamber at a temperature in a range of from about 200° C. to about 450° C. and exciting the plasma processing gas into a plasma to deposit the metal layer on the etch stop layer on the substrate, the metal layer comprising one or more of ruthenium (Ru), molybdenum (Mo), tungsten (W), copper (Cu), cobalt (Co), iridium (Jr), metal silicides, and metal alloys,
wherein the substrate is continuously under vacuum and is not exposed to ambient air.

2. The method of claim 1 , wherein an RF power source provides a power in a range of from about 1 kW to about 10 kW to deposit the etch stop layer.

3. The method of claim 2 , wherein the RF power source provides a power in a range of from about 2 kW to about 3 kW to deposit the etch stop layer.

4. The method of claim 1 , wherein the etch stop layer comprises titanium nitride (TiN).

5. The method of claim 1 , wherein a power source negatively biases a metal target from about 500 W to about 10 kW to excite the plasma processing gas into a plasma.

6. The method of claim 5 , wherein the plasma processing gas comprises one or more of neon (Ne), argon (Ar), krypton (Kr), xenon (Xe).

7. The method of claim 6 , wherein the plasma processing gas comprises krypton (Kr).

8. The method of claim 1 , further comprising depositing a metal seed on the etch stop layer prior to deposition of the metal layer, wherein deposition of the metal seed comprises flowing a plasma processing gas into the chamber and exciting the plasma processing gas into a plasma to deposit the metal seed on the etch stop layer.

9. The method of claim 8 , wherein the metal seed comprises one or more of ruthenium (Ru), molybdenum (Mo), tungsten (W), copper (Cu), cobalt (Co), iridium (Ir), metal silicides, and metal alloys.

10. A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:
deposit an etch stop layer on a substrate by a physical vapor deposition process at a temperature in a range of from about 200° C. to about 300° C., the etch stop layer comprising one or more of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), molybdenum (Mo), tungsten (W), and ruthenium (Ru);
in situ deposit a metal layer on the etch stop layer by flowing a plasma processing gas into a processing chamber at a temperature in a range of from about 200° C. to about 450° C. and exciting the plasma processing gas into a plasma to deposit the metal layer on the etch stop layer on the substrate, the metal layer comprising one or more of ruthenium (Ru), molybdenum (Mo), tungsten (W), copper (Cu), cobalt (Co), iridium (Jr), metal silicides, and metal alloys; and
maintain the substrate continuously under vacuum.

11. The non-transitory computer readable medium of claim 10 , wherein the in situ deposition comprises flowing a plasma processing gas into the processing chamber and exciting the plasma processing gas into a plasma to deposit the metal layer on the etch stop layer on the substrate.

Assignees

• Applied Materials Inc

Inventors

• Ren He
• Jiang Hao
• Naik Mehul
• Hou Wenting
• Lei Jianxin
• Gong Chen
• Cao Yong

Classifications

• H10W20/074

  of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10W20/4432

  the principal metal being a noble metal, e.g. gold · CPC title

• H10P14/44 Primary

  Physical vapour deposition [PVD] · CPC title

• H10P72/0461

  characterised by the presence of two or more transfer chambers · CPC title