Substrate processing apparatus and method

Patent metadata

Field	Value
Publication number	US-11230766-B2
Application number	US-201815940729-A
Country	US
Kind code	B2
Filing date	Mar 29, 2018
Priority date	Mar 29, 2018
Publication date	Jan 25, 2022
Grant date	Jan 25, 2022

Abstract

The invention relates to a substrate processing apparatus comprising a reaction chamber provided with a substrate rack for holding a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the plurality of substrates. The apparatus may have an illumination system constructed and arranged to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a reaction chamber;
a substrate rack for holding a plurality of substrates in the reaction chamber in a spaced apart relationship configured to rotate the substrate rack about an axis; and
an illumination system constructed and arranged to irradiate ultraviolet radiation comprising a wavelength within a range from 100 to 500 nanometers onto a top surface of at least one of the substrates in the substrate rack from a side of the substrate rack;
wherein a power controller is configured to at least one of switch off and limit power to a part of the illumination system to limit an amount of radiation hitting the substrate rack as it rotates around the axis.

2. The apparatus of claim 1 , wherein the power controller is configured to limit the electromagnetic radiation hitting the substrate rack such that a reduced amount of electromagnetic radiation is received by the substrate rack as compared to the electromagnetic radiation received by the at least one of the substrates.

3. The apparatus of claim 1 , wherein the power controller is configured to utilize information pertaining to a shape of the substrate rack and a rotational position of the substrate rack in order to limit the amount of radiation hitting the substrate rack as it rotates around the axis.

4. The apparatus according to claim 1 , wherein the apparatus comprises a heater for heating the substrates in the reaction chamber.

5. The apparatus according to claim 1 , wherein the apparatus is arranged to rotate the substrate rack around a vertical axis and the illumination system is arranged horizontally displaced from said vertical axis.

6. The apparatus according to claim 1 , wherein the illumination system is constructed and arranged to limit the radiation beam emitted from a side of the substrate rack downwards to a top surface of the substrate held in the substrate rack, such that an average direction of the radiation beam is limited to an angle between 60 to 90° with respect to a line perpendicular to the surface of the substrate.

7. The apparatus according to claim 1 , wherein the illumination system is constructed and arranged to limit the radiation beam emitted from a side of the substrate rack downwards to a top surface of the substrate held in the substrate rack, such that an average direction of the radiation beam is limited to an angle between 80 to 89.5° with respect to a line perpendicular to the surface of the substrate.

8. The apparatus according to claim 7 , wherein the illumination system is provided with a radiation transmitting or reflecting surface to direct the ultraviolet radiation to the substrates.

9. The apparatus according to claim 8 , wherein the apparatus is provided with a purge system for purging a radiation transmitting or reflecting surface in the reaction chamber.

10. The apparatus according to claim 8 , wherein the illumination system comprising the radiation transmitting or reflecting surface is provided partially within the reaction chamber.

11. The apparatus according to claim 1 , wherein at least one injector is provided within the reaction chamber for providing a fluid into the reaction chamber.

12. The apparatus according to claim 1 , further comprising a fluid storage comprising an oxidizing fluid for providing oxidizing fluid in the reaction chamber.

13. The apparatus according to claim 1 , further comprising a fluid storage comprising an etchant fluid for providing etchant fluid in the reaction chamber.

Assignees

• Asm Ip Holding Bv

Inventors

• Pierreux Dieter
• Herbschleb Cornelis Thaddeus
• Knaepen Werner
• Jongbloed Bert
• Van Aerde Steven
• Houben Kelly
• Oosterlaken Theodorus
• De Ridder Chris
• Jdira Lucian

Classifications

• H10P72/7604

  the wafers being placed on a susceptor, stage or support · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title

• C23C16/4557

  Heated nozzles · CPC title

• C23C16/56

  After-treatment · CPC title

• C23C16/45546

  specially adapted for a substrate stack in the ALD reactor · CPC title