Magnetic memory structure

Patent metadata

Field	Value
Publication number	US-11227990-B2
Application number	US-201916514523-A
Country	US
Kind code	B2
Filing date	Jul 17, 2019
Priority date	Jul 17, 2019
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

A magnetic memory structure is provided. The magnetic memory structure includes a magnetic tunneling junction (MTJ) layer and a heavy-metal layer. The MTJ layer includes a pinned-layer, a barrier-layer formed under the pinned-layer and a free-layer formed under the barrier-layer. The heavy-metal layer is formed under the free-layer. The barrier-layer has a first upper surface, the pinned-layer has a lower surface, and area of the first upper surface is larger than area of the lower surface.

First claim

What is claimed is:

1. A magnetic memory structure, comprising:
a magnetic tunneling junction (MTJ) layer, comprising:
a pinned-layer;
a barrier-layer formed under the pinned-layer; and
a free-layer formed under the barrier-layer; and

a heavy-metal layer formed under the free-layer;
wherein the barrier-layer has a first upper surface, the pinned-layer has a lower surface, and an area of the first upper surface is larger than an area of the lower surface.

2. The magnetic memory structure according to claim 1 , wherein the lower surface of the pinned-layer is entirely located at the first upper surface of the barrier-layer.

3. The magnetic memory structure according to claim 1 , wherein the barrier-layer, the free-layer and the heavy-metal layer have a first lateral surface, a second lateral surface and a third lateral surface, and the first lateral surface, the second lateral surface and the third lateral surface are flush with each other.

4. The magnetic memory structure according to claim 1 , further comprises:
a conductive layer formed under the heavy-metal layer;
wherein the conductive layer has an electric conductivity higher than that of the heavy-metal layer.

5. The magnetic memory structure according to claim 4 , wherein the conductive layer comprises a first conductive portion and a second conductive portion, and the first conductive portion and the second conductive portion are connected to two ends of the heavy-metal layer.

6. The magnetic memory structure according to claim 4 , wherein the conductive layer has a second upper surface exposed from the heavy-metal layer.

7. The magnetic memory structure according to claim 4 , wherein the heavy-metal layer has a lateral surface, and the conductive layer extends beyond the lateral surface of the heavy-metal layer.

8. The magnetic memory structure according to claim 5 , further comprises:
an insulation layer filling up an interval between the first conductive portion and the second conductive portion.

9. The magnetic memory structure according to claim 5 , comprises:
a plurality of the MTJ layers;
wherein the heavy-metal layer is formed under all MTJ layers, and the MTJ layers overlap an interval of the first conductive portion and the second conductive portion up and down.

10. The magnetic memory structure according to claim 9 , wherein there is no conductive portion disposed with an interval between the first conductive portion and the second conductive portion.

Assignees

• Ind Tech Res Inst

Inventors

• Shakh Ziaur Rahaman
• Wang I-Jung
• Wei Jeng-Hua

Classifications

• H10N50/85

  Materials of the active region · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• G11C11/1673

  Reading or sensing circuits or methods · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title