Patterning of multi-depth optical devices

Patent metadata

Field	Value
Publication number	US-11226556-B2
Application number	US-202016844636-A
Country	US
Kind code	B2
Filing date	Apr 9, 2020
Priority date	Apr 11, 2019
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

First claim

What is claimed is:

1. A method of forming an optical device, comprising:
disposing a hardmask over a device layer disposed directly over a planar top surface of a substrate, the device layer having:
a first portion having a first height from the top surface of the substrate; and
a second portion having a second height from the top surface of the substrate;

disposing a resist layer over the hardmask, the resist layer having a top surface parallel to the top surface of the substrate;
patterning the resist layer to:
form a plurality of first openings therein over the first portion of the device layer to expose portions of the hardmask; and
form a plurality of second openings over the second portion of the device layer to expose additional portions of the hardmask;

etching the exposed portions of the hardmask to:
expose a plurality of first device layer segments of the first portion of the device layer; and
expose a plurality of second device layer segments within the second portion of the device layer; and

etching the first device layer segments and the second device layer segments to expose at least a portion of the planar top surface of the substrate; and
forming at least a portion of a plurality of first structures within the optical device, the first structures having a first depth relative to the top surface of the substrate; and
forming at least a portion of a plurality of second structures within the optical device, the second structures having a second depth relative to the top surface of the substrate different than the first depth.

2. The method of claim 1 , wherein the first depth is less than the second depth.

3. The method of claim 1 , wherein the plurality of first structures and the plurality of second structures are perpendicular to the top surface of the substrate.

4. The method of claim 1 , wherein the plurality of first structures and the plurality of second structures are at an angle, other than perpendicular, relative to the top surface of the substrate.

5. The method of claim 1 , wherein the hardmask is non-transparent.

6. The method of claim 5 , further comprising:
removing the hardmask.

7. A method of forming an optical device, comprising:
disposing a hardmask over a device layer disposed directly over a planar top surface of a substrate, the device layer having:
a first portion having a first height from the planar top surface of the substrate; and
a second portion having a second height from the planar top surface of the substrate; different from the first height

disposing a resist layer over the hardmask;
patterning the resist layer to:
form a plurality of first openings over the first portion of the device layer to expose portions of the hardmask; and
form a plurality of second openings over the second portion of the device layer to expose additional portions of the hardmask;

etching the exposed portions of the hardmask to:
expose a plurality of first device layer segments within the first portion of the device layer; and
expose a plurality of second device layer segments within the second portion of the device layer; and

etching the first device layer segments and the second device layer segments to expose at least a portion of the planar top surface of the substrate, wherein
etching the first device layer segments comprises forming a plurality of first structures within the optical device, the first structures having a plurality of first openings there between, each of the first openings having a first depth; and
etching the second device layer segments comprises forming a plurality of second structures within the optical device, the second structures having a plurality of second openings there between, each of the second openings having a second depth wherein the first depth is different than the second depth.

8. The method of claim 7 , wherein the first depth is less than the second depth.

9. The method of claim 7 , wherein a distance between the top surface and bottom surface of the first structures is different from a distance between the top surface and bottom surface of the second structures.

10. The method of claim 7 , wherein the plurality of first structures and the plurality of second structures are perpendicular to the planar top surface of the substrate.

11. The method of claim 7 , wherein the plurality of first structures and the plurality of second structures are at an angle, other than perpendicular, relative to the top surface of the substrate.

12. The method of claim 7 , wherein the hardmask remains on the device layer during etching of the first device layer segments and the second device layer segments.

13. A method of forming an optical device, comprising:
disposing a hardmask over a device layer disposed directly over a planar top surface of a substrate, the device layer having:
a first portion having a first height from the planar top surface of the substrate; and
a second portion having a second height from the planar top surface of the substrate;

disposing a resist layer over the hardmask, the resist layer having a top surface parallel to the planar top surface of the substrate;
patterning the resist layer to:
form a plurality of first openings over the first portion of the device layer to expose portions of the hardmask; and
form a plurality of second openings over the second portion of the device layer to expose additional portions of the hardmask;

etching the exposed portions of the hardmask to:
expose a plurality of first device layer segments within the first portion of the device layer; and
expose a plurality of second device layer segments within the second portion of the device layer; and

etching the first device layer segments and the second device layer segments to expose at least a portion of the planar top surface of the substrate; and
forming at least a portion of a plurality of first structures to expose a planar surface within the optical device, the first structures having a first depth relative to the top surface of the substrate, wherein the hardmask remains on the device layer; and
forming at least a portion of a plurality of second structures to expose a planar surface within the optical device, the second structures having a second depth relative to the top surface of the substrate different than the first depth, wherein the hardmask remains on the device layer.

14. The method of claim 13 , wherein the resist layer remains on the hardmask during etching of exposed portions of the hardmask.

15. The method of claim 13 , wherein the plurality of first structures and the plurality of second structures are at an angle relative to the planar top surface of the substrate.

16. The method of claim 13 , wherein the hardmask is non-transparent.

Assignees

• Applied Materials Inc

Inventors

• Godet Ludovic
• Chen Chien-An
• Cohen Brian Alexander
• Mcmillan Wayne
• Mcmackin Ian Matthew

Classifications

• G02B5/1857

  using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams · CPC title

• G02B5/0268

  characterized by the fabrication or manufacturing method · CPC title

• G02B1/12 Primary

  by surface treatment, e.g. by irradiation · CPC title

• G03F7/0005 Primary

  Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor · CPC title

• G02B6/34

  utilising prism or grating {(G02B6/293 takes precedence)} · CPC title