Electro-optical modulator using waveguides with overlapping ridges

Patent metadata

Field	Value
Publication number	US-11226505-B2
Application number	US-202016789317-A
Country	US
Kind code	B2
Filing date	Feb 12, 2020
Priority date	Jan 24, 2014
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

First claim

We claim:

1. A method for forming an optical device, the method comprising:
forming a first waveguide on a dielectric substrate, the first waveguide comprising a first ridge projecting in a first direction from the dielectric substrate and extending in a second direction of an optical path;
forming a dielectric layer on the first ridge; and
forming a second waveguide on an upper surface of the dielectric layer opposite a lower surface of the dielectric layer contacting the first ridge, the second waveguide defining a first surface facing the upper surface and a second surface opposite the first surface, wherein the second surface comprises a second ridge projecting in the first direction from the second surface and extending in the second direction of the optical path, wherein the second ridge at least partially overlaps both the dielectric layer and the first ridge, and wherein the first waveguide is doped a first conductivity type and the second waveguide is doped a second, different conductivity type, wherein respective widths of the first and second ridges in a direction perpendicular to the second direction of the optical path are equal.

2. The method of claim 1 , further comprising, after forming the dielectric layer and before forming the second waveguide:
depositing dielectric material; and
planarizing the dielectric material to expose the upper surface of the dielectric layer, whereby an upper surface of the dielectric material is co-planar with the upper surface of the dielectric layer.

3. The method of claim 1 , wherein the first waveguide comprises raised wings, wherein the first ridge is arranged between the raised wings, and wherein a dielectric material is disposed between the raised wings and the first ridge.

4. The method of claim 1 , wherein forming the dielectric layer comprises thermally growing the dielectric layer from a material of the first waveguide, wherein the dielectric layer is silicon dioxide.

5. The method of claim 1 , further comprising:
coupling a first electrical contact to the first waveguide; and
coupling a second electrical contact to the second waveguide.

6. The method of claim 1 , wherein the second waveguide comprises a u-shaped waveguide, defining a cavity between a first wing, a second wing, and the second ridge, wherein the second ridge is arranged between the first and second wings on a different plane from the first and second wings, and wherein a dielectric material is disposed between the first and second wings and the second ridge in the cavity.

7. The method of claim 1 , wherein the second ridge comprises a different material than a remaining portion of the second waveguide.

8. A method for forming an optical device, the method comprising:
forming a first waveguide on a dielectric substrate, the first waveguide extending in a first direction of an optical path;
forming a dielectric layer on the first waveguide, wherein the dielectric layer extends in a second direction from the first waveguide perpendicular to the optical path according to a first thickness in the second direction and a second thickness in the second direction that is different from the first thickness, wherein forming the dielectric layer comprises thermally growing the dielectric layer from a material of the first waveguide, wherein the dielectric layer is silicon dioxide; and
depositing a second waveguide on an upper surface of the dielectric layer opposite a lower surface of the dielectric layer contacting the first waveguide, the second waveguide defining a u-shape according to the first thickness and the second thickness to define a ridge that at least partially overlaps both the dielectric layer and the first waveguide, wherein the second waveguide extends in the first direction of the optical path, and wherein the first waveguide is doped a first conductivity type and the second waveguide is doped a second, different conductivity type.

9. The method of claim 8 , wherein forming the first waveguide further comprises:
forming a lower ridge that extends in the second direction from the dielectric substrate, wherein the lower ridge at least partially overlaps with the ridge of the second waveguide.

10. The method of claim 9 , wherein respective widths of the ridge of the second waveguide and the lower ridge in a direction perpendicular to the direction of the optical path are equal.

11. The method of claim 8 , further comprising:
coupling a first electrical contact to the first waveguide; and
coupling a second electrical contact to the second waveguide.

12. The method of claim 8 , wherein the u-shape defined by the second waveguide defines a cavity between a first wing of the second waveguide and a second wing of the second waveguide, wherein the ridge is positioned between the first wing and the second wing.

13. A method for forming an optical device, the method comprising:
forming a first waveguide on a dielectric substrate, the first waveguide comprising a first ridge projecting in a first direction from the dielectric substrate and extending in a second direction of an optical path;
forming a dielectric layer on the first ridge;
after forming the dielectric layer and before forming a second waveguide:
depositing dielectric material; and
planarizing the dielectric material to expose an upper surface of the dielectric layer, whereby the upper surface of the dielectric material is co-planar with the upper surface of the dielectric layer; and

forming the second waveguide on the upper surface of the dielectric layer opposite a lower surface of the dielectric layer contacting the first ridge, the second waveguide defining a first surface facing the upper surface and a second surface opposite the first surface, wherein the second surface at least partially overlaps both the dielectric layer and the first ridge, and wherein the first waveguide is doped a first conductivity type and the second waveguide is doped a second, different conductivity type.

14. The method of claim 13 , wherein the second surface comprises a second ridge projecting in the first direction from the second surface and extending in the second direction of the optical path.

15. The method of claim 14 , wherein respective widths of the first and second ridges in a direction perpendicular to the direction of the optical path are equal.

16. The method of claim 13 , wherein the first waveguide comprises raised wings, wherein the first ridge is arranged between the raised wings, and wherein a dielectric material is disposed between the raised wings and the first ridge.

17. The method of claim 13 , further comprising:
coupling a first electrical contact to the first waveguide; and
coupling a second electrical contact to the second waveguide.

18. A method, comprising:
forming a first waveguide on a dielectric substrate, the first waveguide extending in a first direction of an optical path;
forming a dielectric layer on the first waveguide, wherein the dielectric layer extends in a second direction from the first waveguide perpendicular to the optical path according to a first thickness in the second direction and a second thickness in the second direction that is different from the first thickness;
depositing a second waveguide on an upper surface of the dielectric layer opposite a lower surface of the dielectric layer contacting the first waveguide, the second waveguide defining a u-shape according to the first thickness and the second thickness to define a ridge that at least partially overlaps both the dielectric layer and the first waveguide, wherein

Assignees

• Cisco Tech Inc

Inventors

• Adams Donald
• Gothoskar Prakash B
• Patel Vipulkumar
• Webster Mark

Classifications

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title

• Y10S977/834

  Optical properties of nanomaterial, e.g. specified transparency, opacity, or index of refraction · CPC title

• G02B6/136

  by etching · CPC title

• G02F1/0152

  using free carrier effects, e.g. plasma effect · CPC title