Semiconductor laser

Patent metadata

Field	Value
Publication number	US-9407065-B2
Application number	US-201213565008-A
Country	US
Kind code	B2
Filing date	Aug 2, 2012
Priority date	Aug 3, 2011
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

A semiconductor laser includes: a stacked body having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light; and a dielectric layer provided so as to sandwich both sides of at least part of side surfaces of the stacked body, a wavelength at which a transmittance of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer.

First claim

What is claimed is:

1. A semiconductor laser comprising:
a stacked body disposed on an InP or GaAs substrate having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier injected from the first region alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light in a direction along which the ridge waveguide extends, the active layer being rectangular in a cross section orthogonal to the ridge waveguide; and
a dielectric layer provided so as to sandwich at least both side surfaces of the active layer of the stacked body in the cross section, a wavelength at which a transmittance of light of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer, the dielectric layer being made of a single-crystal ZnSe material formed directly on the InP or GaAs substrate and including neither acceptors nor donors at a region adjacent to the side surfaces of the active layer.

2. The semiconductor laser according to claim 1 , further comprising:
a substrate having a first surface, the stacked body being provided on the first surface; and
a first electrode connected to the ridge waveguide.

3. The semiconductor laser according to claim 1 , further comprising an insulating film covering a surface of the dielectric layer.

4. The semiconductor laser according to claim 1 , wherein the second region has a plurality of minibands.

5. The semiconductor laser according to claim 1 , wherein
an extraction barrier layer is provided between the first region and the second region and
an injection barrier layer is provided between the second region and the first region.

6. The semiconductor laser according to claim 1 , wherein a diffraction grating is provided in the stacked body in the direction along which the ridge waveguide extends.

7. The semiconductor laser according to claim 6 , wherein a pitch of the diffraction grating is one half of an in-medium wavelength.

8. The semiconductor laser according to claim 1 , wherein
the ridge waveguide has a first end surface and a second end surface on an opposite side of the first end surface,
a first reflection film is provided at the first end surface, and
a second reflection film having a reflectance higher than a reflectance of the first reflection film is provided at the second end surface.

9. The semiconductor laser according to claim 1 , wherein the carrier is an electron.

10. The semiconductor laser according to claim 1 , wherein the active layer contains GaAs and Al x Ga 1-x As (0<x<1).

11. The semiconductor laser according to claim 1 , wherein the active layer contains In y Ga 1-y As (0<y<1) and Al z In 1-z As (0<z<1).

12. A semiconductor laser comprising:
a first substrate comprising an InP or GaAs substrate having a first surface;
a stacked body provided on the first surface and having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier injected from the first region alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light in a direction along which the ridge waveguide extends;
a dielectric layer provided on the first surface and so as to sandwich at least both side surfaces of the active layer of the stacked body in a cross section orthogonal to the ridge waveguide, the both side surfaces being orthogonal to the first surface, a wavelength at which a transmittance of light of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer, the dielectric layer being made of a single-crystal ZnSe material formed directly on the InP or GaAs substrate and including neither acceptors nor donors at a region adjacent to the side surfaces of the active layer; and
a first electrode connected to the ridge waveguide.

13. The semiconductor laser according to claim 12 , wherein the active layer is included in the ridge waveguide.

14. The semiconductor laser according to claim 12 , wherein the second region has a plurality of minibands.

15. A semiconductor laser comprising:
a first substrate comprising an InP or GaAs substrate having a first surface;
a stacked body provided on the first surface and having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light with a wavelength of not less than 12 μm and not more than 18 μm by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier injected from the first region alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light in a direction along which the ridge waveguide extends;
a dielectric layer provided on the first surface and so as to sandwich at least both side surfaces of the active layer of the stacked body in a cross section orthogonal to the ridge waveguide, the both side surfaces being orthogonal to the first surface, a wavelength at which a transmittance of light of the dielectric layer decreases to 50% being 16 μm or more, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer, the dielectric layer being made of a single-crystal ZnSe material formed directly on the InP or GaAs substrate and including neither acceptors nor donors at a region adjacent to the side surfaces of the active layer; and
a first electrode connected to the ridge waveguide,
lengths of the dielectric layer in the cross section and in a direction parallel to the first surface-plus a width of the active layer being smaller than a thickness of the active layer.

16. The semiconductor laser according to claim 15 , wherein the second region has a plurality of minibands.

17. A semiconductor laser comprising:
a stacked body disposed on an InP or GaAs substrate having an active layer including a quantum well layer, the active layer having a cascade structure including a first region capable of emitting infrared laser light by an intersubband optical transition of the quantum well layer and a second region capable of relaxing energy of a carrier injected from the first region alternately stacked, the stacked body having a ridge waveguide and being capable of emitting the infrared laser light in a direction along which the ridge waveguide extends, the active layer being rectangular in a cross section orthogonal to the ridge waveguide; and
a dielectric layer provided so as to sandwich at least both side surfaces of the active layer of the stacked body in the cross section, the dielectric layer having a refractive index lower than refractive indices of all layers constituting the active layer, the dielectric layer being made of at least one single-crystal material of thallium bromoiodide, thallium bromochloride, ZnSe, CdTe, a

Assignees

• Takagi Shigeyuki
• Yabuhara Hidehiko
• Maekawa Akira
• Fujii Takayoshi
• Shiomi Yasutomo
• Toshiba Kk

Inventors

• Takagi Shigeyuki
• Yabuhara Hidehiko
• Maekawa Akira
• Fujii Takayoshi
• Shiomi Yasutomo

Classifications

• H01S5/2022

  Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H01S5/3402 Primary

  intersubband lasers, e.g. transitions within the conduction or valence bands · CPC title

• H01S5/3211

  characterised by special cladding layers, e.g. details on band-discontinuities · CPC title

• H01S5/12

  the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18) · CPC title