Mask forming method

Patent metadata

Field	Value
Publication number	US-11205571-B2
Application number	US-201916575674-A
Country	US
Kind code	B2
Filing date	Sep 19, 2019
Priority date	Sep 19, 2018
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

There is provided a mask forming method, including: forming a photosensitive organic film on a workpiece; generating a first region and a second region in the photosensitive organic film by performing a selective exposure and a post-exposure baking on the photosensitive organic film, the first region having an acidic functional group in the photosensitive organic film, and the second region having a protective group in which the acidic functional group is protected; forming a salt in the first region by causing a basic substance to permeate into the first region using a substance staying in a gaseous state or a solid state; and removing the first region by dissolving the salt in a developer.

First claim

What is claimed is:

1. A mask forming method, comprising:
forming a photosensitive organic film on a workpiece;
generating a first region and a second region in the photosensitive organic film by performing a selective exposure and a post-exposure baking on the photosensitive organic film, the first region having an acidic functional group in the photosensitive organic film, and the second region having a protective group in which the acidic functional group is protected;
forming a salt in the first region by causing a basic substance to permeate into the first region using a substance staying in a gaseous state or a solid state; and
removing the first region by dissolving the salt in a developer.

2. The method of claim 1 , wherein the photosensitive organic film is exposed to a basic gas when causing the basic substance to permeate into the first region.

3. The method of claim 2 , further comprising:
exposing the photosensitive organic film to a water vapor atmosphere between the generating the first region and the second region and the removing the first region.

4. The method of claim 1 , further comprising: when causing the basic substance to permeate into the first region, forming a film containing the basic substance on the photosensitive organic film, and heating the film to cause the basic substance to permeate from the film into the first region.

5. The method of claim 1 , further comprising; when performing the selective exposure on the photosensitive organic film, irradiating the photosensitive organic film with an extreme ultraviolet light.

6. The method of claim 1 , wherein the basic substance is ammonia, methylamine, ethylamine, morpholine, pyridine or an arbitrary combination thereof.

7. The method of claim 1 , wherein a water or an alkaline aqueous solution is used as the developer.

Assignees

• Tokyo Electron Ltd

Inventors

• Yaegashi Hidetami
• Okada Soichiro

Classifications

• H10P76/204 Primary

  of organic photoresist masks · CPC title

• G03F7/38 Primary

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/422

  using liquids only (G03F7/421 takes precedence) · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title