Modulation doped semiconductor laser and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-11196232-B2
Application number	US-202016845235-A
Country	US
Kind code	B2
Filing date	Apr 10, 2020
Priority date	Aug 19, 2019
Publication date	Dec 7, 2021
Grant date	Dec 7, 2021

Abstract

A modulation doped semiconductor laser includes a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the donor, and an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second layers.

First claim

What is claimed is:

1. A modulation doped semiconductor laser comprising:
a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and including an acceptor and a donor;
a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and
an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers,
the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer,
the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer,
the plurality of second layers containing the donor, and
an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second layers.

2. The modulation doped semiconductor laser of claim 1 , wherein the p-type semiconductor layer and the n-type semiconductor layer are form a separate confinement hetero structure.

3. The modulation doped semiconductor laser of claim 1 , wherein, the p-type carrier concentration is 1×10 17 cm −3 or more in each of the plurality of first layers and the plurality of second layers.

4. The modulation doped semiconductor laser of claim 1 , wherein each of the uppermost layer and the lowermost layer of the plurality of layers is a corresponding one of the plurality of first layers.

5. The modulation doped semiconductor laser of claim 1 , wherein each of the uppermost layer and the lowermost layer of the plurality of layers is a corresponding one of the plurality of second layers.

6. The modulation doped semiconductor laser of claim 1 , wherein each of the plurality of first layers is a barrier layer and each of the plurality of second layers is a quantum well layer.

7. The modulation doped semiconductor laser of claim 1 , wherein each of the plurality of first layers is a quantum well layer and each of the plurality of second layers is a barrier layer.

8. The modulation doped semiconductor laser of claim 1 , wherein the acceptor is at least one of Zn or Mg and the donor is Si.

9. The modulation doped semiconductor laser of claim 1 , wherein the plurality of second layers are lower than the p-type semiconductor layer in the p-type carrier concentration.

10. The modulation doped semiconductor laser of claim 1 , wherein the plurality of second layers are lower than the n-type semiconductor layer in the n-type carrier concentration.

11. A manufacturing method of a modulation doped semiconductor laser comprising:
forming an n-type semiconductor layer;
forming a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and containing an acceptor and a donor so that a lowermost layer of the plurality of layers is placed in contact with the n-type semiconductor; and
forming a p-type semiconductor layer by a metal organic chemical vapor deposition method so as to be placed in contact with an uppermost layer of the plurality of layers,
the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer,
the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer,
the plurality of second layers containing the donor, and
an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second layers.

12. The manufacturing method of claim 11 , wherein the multiple quantum well is formed by the metal organic chemical vapor deposition method.

13. The manufacturing method of claim 11 , wherein, the p-type carrier concentration is 1×1017 cm-3 or more in each of the plurality of first layers and the plurality of second layers.

14. The manufacturing method of claim 11 , wherein each of the uppermost layer and the lowermost layer of the plurality of layers is a corresponding one of the plurality of first layers.

15. The manufacturing method of claim 11 , wherein each of the uppermost layer and the lowermost layer of the plurality of layers is a corresponding one of the plurality of second layers.

16. The manufacturing method of claim 11 , wherein each of the plurality of first layers is a barrier layer and each of the plurality of second layers is a quantum well layer.

17. The manufacturing method of claim 11 , wherein each of the plurality of first layers is a quantum well layer and each of the plurality of second layers is a barrier layer.

18. The manufacturing method of claim 11 , wherein the acceptor is at least one of Zn or Mg and the donor is Si.

19. The manufacturing method of claim 11 , wherein the plurality of second layers are lower than the p-type semiconductor layer in the p-type carrier concentration.

20. The manufacturing method of claim 11 , wherein the plurality of second layers are lower than the n-type semiconductor layer in the n-type carrier concentration.

Assignees

• Lumentum Japan Inc

Inventors

• Nakajima Takayuki
• Nakamura Atsushi
• Sekino Yuji

Classifications

• H01S2304/04

  MOCVD or MOVPE · CPC title

• H01S5/3063

  using Mg · CPC title

• H01S5/305

  characterised by the doping materials used in the laser structure · CPC title

• H01S5/34

  comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence) · CPC title

• H01S5/309 Primary

  doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407) · CPC title