Modulation doped semiconductor laser and manufacturing method therefor
US-11196232-B2 · Dec 7, 2021 · US
doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407)
doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407) · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01S5/309 |
| Official title | {doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407)} |
| Display label | doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407) |
| Total patents | 76 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 11 |
| 2016 | 10 |
| 2017 | 9 |
| 2018 | 8 |
| 2019 | 7 |
| 2020 | 11 |
| 2021 | 8 |
| 2022 | 5 |
| 2023 | 4 |
| 2024 | 2 |
| 2025 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Surface-emitting laser device and light emitting device including the same
US-11183813-B2 · Nov 23, 2021 · US
Modulation doped semiconductor laser and manufacturing method therefor
US-2021057886-A1 · Feb 25, 2021 · US
Low modulation-voltage cryogenic diode structure
US-10910793-B2 · Feb 2, 2021 · US
Split-electrode vertical cavity optical device
US-10811841-B2 · Oct 20, 2020 · US
Semiconductor Light Source
US-2020303898-A1 · Sep 24, 2020 · US
Semiconductor light source
US-10727645-B2 · Jul 28, 2020 · US
Low modulation-voltage cryogenic diode structure
US-2020203931-A1 · Jun 25, 2020 · US
Iii-v-on-silicon nanoridge opto-electronic device with carrier blocking layers
US-2020203929-A1 · Jun 25, 2020 · US
Semiconductor light emitting element and semiconductor light emitting element assembly
US-10686291-B2 · Jun 16, 2020 · US
Algainpas-based semiconductor laser device and method for producing same
US-2020161837-A1 · May 21, 2020 · US
Laser device assembly
US-2020124793-A1 · Apr 23, 2020 · US
Dual wavelength hybrid device
US-10601198-B2 · Mar 24, 2020 · US
Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laser
US-10594110-B2 · Mar 17, 2020 · US
Semiconductor module and manufacturing method thereof
US-10574032-B2 · Feb 25, 2020 · US
Semiconductor module and manufacturing method thereof
US-2019260182-A1 · Aug 22, 2019 · US
Surface-emitting laser device and light emitting device including the same
US-2019214788-A1 · Jul 11, 2019 · US
Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laser
US-2019148914-A1 · May 16, 2019 · US
Tunable laser device and method for manufacturing the same
US-10277008-B1 · Apr 30, 2019 · US
Component having a multiple quantum well structure
US-10249787-B2 · Apr 2, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01S5/309?
- CPC H01S5/309 is the Cooperative Patent Classification code for “doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407).”
- How many patents are filed under CPC H01S5/309 (doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407))?
- Our database includes 76 publications tagged with this CPC code.
- Is patent activity under CPC H01S5/309 growing?
- Publication counts under this code: 2 in 2024 vs 1 in 2025 (latest complete years).