High-bandwidth laser having optimized parasitic transfer function
US-2024388053-A1 · Nov 21, 2024 · US
characterised by the doping materials used in the laser structure
characterised by the doping materials used in the laser structure · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01S5/305 |
| Official title | {characterised by the doping materials used in the laser structure} |
| Display label | characterised by the doping materials used in the laser structure |
| Total patents | 206 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 24 |
| 2016 | 9 |
| 2017 | 20 |
| 2018 | 24 |
| 2019 | 24 |
| 2020 | 16 |
| 2021 | 27 |
| 2022 | 15 |
| 2023 | 14 |
| 2024 | 14 |
| 2025 | 13 |
| 2026 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Electron beam pumped vertical cavity surface emitting laser
US-10153616-B2 · Dec 11, 2018 · US
Electron beam pumped non-c-plane uv emitters
US-2018337515-A1 · Nov 22, 2018 · US
Electron beam pumped non-c-plane UV emitters
US-10135227-B1 · Nov 20, 2018 · US
Edge-emitting semiconductor laser
US-10063033-B2 · Aug 28, 2018 · US
Passivation of VCSEL sidewalls
US-9997892-B2 · Jun 12, 2018 · US
Weakly index-guided interband cascade lasers with no grown top cladding layer or a thin top cladding layer
US-9960571-B2 · May 1, 2018 · US
Weakly Index-Guided Interband Cascade Lasers with No Grown Top Cladding Layer or a Thin Top Cladding Layer
US-2017373472-A1 · Dec 28, 2017 · US
Semiconductor light-emitting device
US-9837793-B1 · Dec 5, 2017 · US
Edge-emitting semiconductor laser
US-2017346256-A1 · Nov 30, 2017 · US
Optical semiconductor device
US-2017346258-A1 · Nov 30, 2017 · US
Electron beam pumped vertical cavity surface emitting laser
US-2017317474-A1 · Nov 2, 2017 · US
Semiconductor laser device and manufacturing method of the same
US-9800021-B2 · Oct 24, 2017 · US
Vertical cavity surface emitting laser
US-2017302059-A1 · Oct 19, 2017 · US
Laser diode
US-2017294761-A1 · Oct 12, 2017 · US
Semiconductor laser element and method of manufacturing semiconductor laser element
US-9774169-B2 · Sep 26, 2017 · US
A method for gan vertical microcavity surface emitting laser (vcsel)
US-2017237234-A1 · Aug 17, 2017 · US
Process of forming semiconductor optical device and semiconductor optical device
US-2017207604-A1 · Jul 20, 2017 · US
Nitride semiconductor device and quantum cascade laser using the same
US-2017201072-A1 · Jul 13, 2017 · US
Electron beam pumped vertical cavity surface emitting laser
US-9705288-B2 · Jul 11, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01S5/305?
- CPC H01S5/305 is the Cooperative Patent Classification code for “characterised by the doping materials used in the laser structure.”
- How many patents are filed under CPC H01S5/305 (characterised by the doping materials used in the laser structure)?
- Our database includes 206 publications tagged with this CPC code.
- Is patent activity under CPC H01S5/305 growing?
- Publication counts under this code: 14 in 2024 vs 13 in 2025 (latest complete years).