Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer

Patent metadata

Field	Value
Publication number	US-9444224-B2
Application number	US-201414563847-A
Country	US
Kind code	B2
Filing date	Dec 8, 2014
Priority date	Dec 8, 2014
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described.

First claim

The invention claimed is:

1. A laser diode comprising:
a p-cladding layer;
an n-cladding layer, the n-cladding layer comprising an engineered non-uniform alloy composition including a bottom portion and an upper portion,
wherein the bottom portion maintains material quality, wherein the bottom portion is substantially lattice matched to the substrate, and
the upper portion pulls a mode from the p-cladding layer, wherein the bottom portion and the upper portion are compressively strained layers;

a waveguide coupled to the upper portion of the n-cladding layer; and
a light-emitting region coupled to the waveguide, wherein the light-emitting region is located between the n-cladding layer and the p-cladding layer.

2. The laser diode of claim 1 , wherein the bottom portion is thicker than the upper portion.

3. The laser diode of claim 1 , wherein the bottom portion and the upper portion being an alloy material, the bottom portion having a higher aluminum content than the upper portion.

4. The laser diode of claim 3 , wherein the waveguide being the alloy material, the waveguide having a lower aluminum content than the upper portion.

5. The laser diode of claim 4 , further comprising: an electron blocking layer (EBL) located between the p-cladding layer and the light-emitting region.

6. The laser diode of claim 3 , wherein the alloy material is aluminum gallium nitride (AlGaN).

7. The laser diode of claim 6 , wherein the bottom portion being AlGaN with greater than 60% aluminum content, and the upper portion being AlGaN with less than 60% aluminum content.

8. The laser diode of claim 7 , wherein the p-cladding being AlGaN with less than 70% aluminum content.

9. The laser diode of claim 8 , wherein the waveguide being AlGaN with less than 60% aluminum content.

10. A laser diode comprising:
a p-cladding layer;
an n-cladding layer including at least a first portion and a second portion,
wherein the first portion maintains material quality of the laser diode, wherein the first portion is substantially lattice matched to a substrate, and
the second portion pulls a mode from the p-cladding layer, wherein the first portion and the second portion are compressively strained layers;

a waveguide coupled to the n-cladding layer; and
a light-emitting region coupled to the waveguide, wherein the light-emitting region is located between the n-cladding layer and the p-cladding layer.

11. The laser diode of claim 10 , wherein the first portion is thicker than the second portion.

12. The laser diode of claim 10 , wherein the first portion and the second portion being an alloy material, the first portion having a higher aluminum content than the second portion.

13. The laser diode of claim 12 , wherein the waveguide being the alloy material, the waveguide having a lower aluminum content than the second portion.

14. The laser diode of claim 13 , further comprising: an electron blocking layer (EBL) located between the p-cladding layer and the light-emitting region.

15. The laser diode of claim 12 , wherein the alloy material is aluminum gallium nitride (AlGaN).

16. The laser diode of claim 15 , wherein the first portion being AlGaN with greater than 60% aluminum content, and the second portion being AlGaN with less than 60% aluminum content.

17. The laser diode of claim 16 , wherein the p-cladding being AlGaN with less than 70% aluminum content.

18. The laser diode of claim 17 , wherein the waveguide being AlGaN with less than 60% aluminum content.

19. A laser diode comprising:
an n-cladding layer that includes an alloy material, the n-cladding layer including a first portion and a second portion, wherein the first portion is thicker than the second portion, wherein the first portion includes higher aluminum content than the second portion, wherein the first portion is substantially lattice matched to a substrate, wherein the first portion and the second portion are compressively strained layers;
a p-cladding layer that includes the alloy material;
a waveguide coupled to the n-cladding layer; and
a light-emitting region coupled to the waveguide, wherein the light-emitting region is located between the n-cladding layer and the p-cladding layer.

20. The laser diode in claim 19 , further comprising:
the substrate coupled to the first portion of the n-cladding layer;
wherein the second portion of the n-cladding layer is coupled to the waveguide.

21. The laser diode of claim 20 , wherein
the n-cladding layer is an alloy material,
an amount of aluminum content of the second portion is based on a thickness of the waveguide and an amount of aluminum content of the waveguide.

22. The laser diode in claim 19 , wherein the light-emitting region is a multiple quantum well active region.

23. A laser diode comprising:
a light-emitting region
an electron blocking layer (EBL) above the light-emitting region
an upper waveguide layer above the light-emitting region;
a p-cladding layer above the upper waveguide layer
a lower waveguide layer below the light-emitting region;
an n-cladding layer below the lower waveguide layer including a first portion and a second portion, wherein the first portion is thicker than the second portion,
wherein the first portion maintains material quality of the laser diode, wherein the first portion is substantially lattice matched to a substrate; and
the second portion pulls an electric field profile from the p-cladding layer, wherein pulling the electric field profile from the p-cladding layer includes pulling a light intensity from the p-cladding toward the light-emitting region, wherein the first portion and the second portion are compressively strained layers.

24. The laser diode of claim 22 , wherein the n-cladding layer is an alloy material and the first portion having higher aluminum content than the second portion.

25. The laser diode in claim 24 , wherein the alloy material is AlGaN.

Assignees

• Palo Alto Res Ct Inc

Inventors

• Chua Christopher L
• Wunderer Thomas
• Yang Zhihong

Classifications

• H01S5/3211

  characterised by special cladding layers, e.g. details on band-discontinuities · CPC title

• H01S5/3215

  graded composition cladding layers · CPC title

• H01S5/2031

  characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities · CPC title

• H01S5/3213

  asymmetric clading layers · CPC title

• H01S5/309

  doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407) · CPC title