Self aligned block masks for implantation control

Patent metadata

Field	Value
Publication number	US-11177132-B2
Application number	US-201916502172-A
Country	US
Kind code	B2
Filing date	Jul 3, 2019
Priority date	Jul 3, 2019
Publication date	Nov 16, 2021
Grant date	Nov 16, 2021

Abstract

Methods for doping a semiconductor layer include forming a first mask on a first region of a semiconductor layer. A second region of the semiconductor layer, that is not covered by the first mask, is doped. A second mask is formed on the second region of the semiconductor layer. The first mask is etched away. The first region of the semiconductor layer is doped.

First claim

What is claimed is:

1. A method for doping a semiconductor layer, comprising:
forming a first mask on a first region of a semiconductor layer, the first mask including a planarizing layer, a hardmask layer on the planarizing layer, and an anti-reflection coating on the hardmask layer;
doping a second region of the semiconductor layer that is not covered by the first mask, using a second dopant species of a second conductivity type, to form a second doped area;
depositing a second mask material to a height above the first mask in both the first region and the second region;
polishing the second mask material down to a height of the hardmask laver, so that the anti-reflection layer and the second mask material is removed in the first region, to form a second mask on the second region of the semiconductor layer;
etching away the first mask; and
doping the first region of the semiconductor layer, using a first dopant species of a first conductivity type, to form a first doped area that directly contacts the second doped area.

2. The method of claim 1 , wherein forming the first mask comprises:
forming an organic planarizing layer on the semiconductor layer;
forming a hardmask layer on the organic planarizing layer; and
patterning the organic planarizing layer and the hardmask layer to remove material from the organic planarizing layer and the hardmask layer outside of the first region of the semiconductor layer.

3. The method of claim 2 , wherein forming the first mask further includes forming an antireflective coating on the hardmask layer before patterning the organic planarizing layer and the hardmask layer.

4. The method of claim 1 , wherein etching away the first mask is performed after forming the second mask.

5. The method of claim 1 , wherein etching away the first mask includes an etch process that selectively removes material from the first mask without substantially damaging the second mask.

6. The method of claim 1 , wherein the first doped area and the second doped area abut one another without overlap.

7. The method of claim 1 , wherein forming the first mask includes a lithographic process and wherein forming the second mask includes a deposition process followed by a chemical mechanical planarization process.

8. The method of claim 1 , wherein etching away the first mask is performed after forming the second mask.

9. A method for doping a semiconductor layer, comprising:
forming a first mask on a first region of a semiconductor layer by:
forming an organic planarizing layer on the semiconductor layer;
forming a hardmask layer on the organic planarizing layer;
forming an anti-reflection layer on the hardmask laver, and
patterning the organic planarizing layer, the hardmask layer, and the anti-reflection layer to remove material from the organic planarizing layer, the hardmask layer, and the anti-reflection layer outside of the first region of the semiconductor layer;

doping a second region of the semiconductor layer that is not covered by the first mask, using a second dopant species of a second conductivity type, to form a second doped area;
forming a second mask on the second region of the semiconductor layer by:
depositing a second mask material to a height above the first mask in both the first region and the second region; and
polishing the second mask material down to a height of the hardmask layer, so that the anti-reflection layer and the second mask material is removed in the first region;
etching away the first mask; and
doping the first region of the semiconductor layer, using a first dopant species of a first conductivity type, to form a first doped area that directly contacts the second doped area.

10. The method of claim 9 , wherein forming the first mask further includes forming an antireflective coating on the hardmask layer before patterning the organic planarizing layer and the hardmask layer.

11. The method of claim 9 , wherein etching away the first mask is performed after forming the second mask.

12. The method of claim 9 , wherein etching away the first mask includes an etch process that selectively removes material from the first mask without substantially damaging the second mask.

13. The method of claim 9 , wherein the first doped area and the second region doped area abut one another without overlap.

14. The method of claim 9 , wherein forming the first mask includes a lithographic process and wherein forming the second mask includes a deposition process followed by a chemical mechanical planarization process.

15. A method for doping a semiconductor layer, comprising:
forming a first mask on a first region of a semiconductor layer by:
forming an anti-reflection layer on the hardmask layer; and
patterning the organic planarizing layer, the hardmask layer, and the anti-reflection layer to remove material from the organic planarizing layer, the hardmask layer, and the anti-reflection layer outside of the first region of the semiconductor layer;

doping a second region of the semiconductor layer that is not covered by the first mask, using a second dopant species of a second conductivity type, to form a second doped area;
forming a second mask on the second region of the semiconductor layer by:
depositing a second mask material to a height above the first mask in both the first region and the second region; and
polishing the second mask material down to a height of the hardmask layer, so that the anti-reflection layer and the second mask material is removed in the first region;
etching away the first mask after forming the second mask using an etch process that selectively removes material from the first mask without substantially damaging the second mask; and
doping the first region of the semiconductor layer, using a first dopant species of a first conductivity type, to form a first doped area that directly contacts, and does not overlap with, the second doped area.

Assignees

• IBM

Inventors

• Wang Junli
• Lallement Romain
• Rahman Ardasheir
• Jiang Liying
• Anderson Brent A

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P30/22 Primary

  using masks · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title