Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method

Patent metadata

Field	Value
Publication number	US-11143962-B2
Application number	US-201615755972-A
Country	US
Kind code	B2
Filing date	Aug 25, 2016
Priority date	Aug 31, 2015
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),

wherein R 1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R 2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R 2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m 2 is independently an integer of 0 to 7, provided that at least one m 2 is an integer of 1 to 7, and each q is independently 0 or 1.

First claim

The invention claimed is:

1. A method for forming an underlayer film for lithography, comprising:
forming an underlayer film on a substrate using a composition for forming an underlayer film, the composition including a solvent and a material for forming an underlayer film; and
forming at least one photoresist layer on the underlayer film,
the material for forming an underlayer film including at least any of a compound represented by following formula (1-1) or a resin including a structural unit derived from a compound represented by the following formula (1-1),

wherein, R 1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R 3 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, or a thiol group, and may be the same or different in the same naphthalene ring or benzene ring, each R 4 independently represents a hydrogen atom or an acid-dissociable group, in which at least one R 4 represents an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, each m 5 is independently an integer of 1 to 6, each m 6 is independently an integer of 0 to 5, m 5 +m 6 is an integer of 1 to 6, and each q is independently 0 or 1.

2. The method according to claim 1 , wherein the compound represented by the formula (1-1) is a compound represented by following formula (1-2),

wherein R 1 , R 3 , R 4 , m 6 , n and q are the same as defined above, provided that at least one R 4 represents an acid-dissociable group.

3. The method according to claim 2 , wherein the compound represented by the formula (1-2) is a compound represented by following formula (1-3),

wherein R 4 and q are the same as defined above, X′ represents a hydrogen atom, a halogen atom, or a monovalent group having 1 to 59 carbon atoms, each R 0 independently represents an alkyl group having 1 to 4 carbon atoms, or a halogen atom, and may be the same or different in the same naphthalene ring or benzene ring, and each p 2 is independently an integer of 0 to 5, provided that at least one R 4 represents an acid-dissociable group.

4. The method according to claim 3 , wherein q in the formula (1-3) is 1.

5. The method according to claim 4 , wherein the compound is represented by following formula (1-5) or following formula (1-6),

wherein R 4 is the same as defined above, R 6 represents at least one selected from the group consisting of a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group and a hydroxyl group, k is an integer of 1 to 5, and k′ is an integer of 1 to 3, provided that at least one R 4 represents an acid-dissociable group.

6. A method for forming an underlayer film for lithography, comprising:
forming an underlayer film on a substrate using a composition for forming an underlayer film, the composition including a solvent and a material for forming an underlayer film; and
forming at least one photoresist layer on the underlayer film,
the material for forming an underlayer film including at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),

wherein R 1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R 2 independently represents a halogen atom, a straigh, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R 2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m 2 is independently an integer of 0 to 7, provided that at least one m 2 is an integer of 1 to 7, and each q is independently 0 or 1, wherein the compound has a group including an iodine atom.

7. The method according to claim 5 , wherein the compound represented by the formula (1-5) or the formula (1-6) is at least one selected from the group consisting of following compounds.

8. The method according to claim 1 , wherein the composition further includes an acid generator.

9. The method according to claim 1 , wherein the composition further includes a crosslinking agent.

10. An underlayer film for lithography, formed according to the method of claim 1 .

11. A resist pattern forming method comprising:
a step of forming an underlayer film on a substrate using a composition for forming an underlayer film, the composition including a solvent and a material for forming an underlayer film, the material for forming an underlayer film including at least any of a compound represented by following formula (1-1) or a resin including a structural unit derived from a compound represented by the following formula (1-1),

wherein R 1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R 3 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, or a thiol group, and may be the same or different in the same naphthalene ring or benzene ring, each R 4 independently represents a hydrogen atom or an acid-dissociable group, in which at least one R 4 represents an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, each m 5 is independently an integer of 1 to 6, each m 6 is independently an integer of 0 to 5, m 5 + m 6 is an integer of 1 to 6, and each q is independently 0 or 1
a step of forming at least one photoresist layer on the underlayer film, and
a step of irradiating a predetermined region of the photoresist layer with radiation, and developing it.

12. A circuit pattern forming method comprising:
a step of forming an underlayer film on a substrate using

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Toida Takumi
• Makinoshima Takashi
• Sato Takashi
• Echigo Masatoshi

Classifications

• G03F7/16

  Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) · CPC title

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/266

  by vapour etching only · CPC title