High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy

Patent metadata

Field	Value
Publication number	US-11139142-B2
Application number	US-201916421268-A
Country	US
Kind code	B2
Filing date	May 23, 2019
Priority date	May 23, 2019
Publication date	Oct 5, 2021
Grant date	Oct 5, 2021

Abstract

A plurality of energy filter values are obtained using a model that simulates potential distribution within a 3D feature when an electron beam of an SEM impinges on a selected area that includes the 3D feature. A correspondence is extracted between the plurality of energy filter values and respective depths of the 3D feature along a longitudinal direction by analyzing the simulated potential distribution. A plurality of SEM images of the 3D feature corresponding to the plurality of energy filter values are obtained. The plurality of SEM images are associated with their respective depths based on the extracted correspondence between the plurality of energy filter values and the respective depths. A composite 3D profile of the 3D feature is generated from the plurality of SEM images obtained from various depths of the 3D feature.

First claim

What is claimed is:

1. A method comprising:
selecting an area of a semiconductor device to be scanned by a scanning electron microscope (SEM), wherein the area includes a three-dimensional (3D) feature having a depth;
obtaining a plurality of energy filter values using a model that simulates potential distribution within the 3D feature when an electron beam of the SEM is to impinge on the selected area including the 3D feature, wherein the model expresses value of local potential as a function of coordinates of a location of emittance of secondary electrons as offset from a reference value;
extracting from the model, prior to performing actual imaging of the selected area of the semiconductor device, a correspondence between the plurality of energy filter values and respective depths of the 3D feature along a longitudinal direction by analyzing the simulated potential distribution;
pre-charging the selected area to create a potential difference between a top and a bottom surface of the 3D feature at a first imaging setting;
obtaining, at a second imaging setting, a plurality of SEM images of the 3D feature corresponding to the plurality of energy filter values;
associating the plurality of SEM images with their respective depths at the second imaging setting based on the extracted correspondence between the plurality of energy filter values and the respective depths at the first imaging setting that is extracted from the model; and
generating a 3D profile of the 3D feature from the plurality of SEM images obtained from various depths of the 3D feature.

2. The method of claim 1 , wherein the method is integrated in-line with other processing steps in a manufacturing sequence of a wafer containing the semiconductor device.

3. The method of claim 1 , wherein the 3D feature has a high, medium or low aspect ratio having a lateral dimension in a range varying from a few nanometers to tens or hundreds of nanometers.

4. The method of claim 1 , wherein the method of pre-charging the selected area before obtaining the plurality of SEM images further comprises: adjusting pre-charging parameters of the selected area based on a conductivity of the 3D feature, such that a potential difference exists between the top surface and the bottom surface of the 3D feature.

5. The method of claim 4 , wherein the potential difference between the top surface and the bottom surface of the 3D feature is expressed as: V=φ(x,y,z 1 )−φ(x,y,0), where a depth of the 3D feature is z 1 along a longitudinal direction ‘z’, and ‘x’ and ‘y’ are lateral coordinates parallel to a plane of a wafer containing the semiconductor device.

6. The method of claim 1 , wherein the model can be configured to further extract correspondence between secondary electron energy and one or more of the following characteristics of the 3D feature: critical dimension at a certain depth, taper, tilt, notch, ellipticity, line edge roughness (LER), line width roughness (LWR).

7. The method of claim 1 , wherein the model can be configured to extract correspondence between secondary electron energy and one or more characteristics of the 3D feature across a full wafer.

8. The method of claim 1 , wherein simulating the potential distribution comprises:
assuming a potential distribution along the longitudinal direction;
simulating a first set of waveforms corresponding to the potential distribution that is assumed;
simulating a second set of waveforms corresponding to a set of measured energy filter values;
altering the first set of waveforms to respectively match with the second set of waveforms; and
recalculating the potential distribution based on the altered first set of waveforms.

9. The method of claim 8 , wherein the method further comprises:
extracting depth values from the measured energy filter values.

10. The method of claim 9 , wherein the extracted depth values are associated respectively with the plurality of SEM images.

11. The method of claim 10 , wherein the 3D profile is obtained by combining the plurality of SEM images at the respective depth values.

12. The method of claim 1 , wherein a frame registration algorithm is applied to the plurality of SEM images.

13. The method of claim 12 , wherein the frame registration algorithm is based on an inherent symmetry in the 3D feature.

14. A non-transitory machine-readable storage medium storing instructions which, when executed, cause a processing device to perform operations comprising:
selecting an area of a semiconductor device to be scanned by a scanning electron microscope (SEM), wherein the area includes a three-dimensional (3D) feature having a depth;
obtaining a plurality of energy filter values using a model that simulates potential distribution within the 3D feature when an electron beam of the SEM is to impinge on the selected area including the 3D feature, wherein the model expresses value of local potential as a function of coordinates of a location of emittance of secondary electrons as offset from a reference value;
extracting from the model, prior to performing actual imaging of the selected area of the semiconductor device, a correspondence between the plurality of energy filter values and respective depths of the 3D feature along a longitudinal direction by analyzing the simulated potential distribution;
pre-charging the selected area to create a potential difference between a top and a bottom surface of the 3D feature at a first imaging setting;
obtaining, at a second imaging setting, a plurality of SEM images of the 3D feature corresponding to the plurality of energy filter values;
associating the plurality of SEM images with their respective depths at the second imaging setting based on the correspondence between the plurality of energy filter values and the respective depths at the first imaging setting that is extracted from the model; and
generating a 3D profile of the 3D feature from the plurality of SEM images obtained from various depths of the 3D feature.

15. The non-transitory machine-readable storage medium of claim 14 , wherein simulating the potential distribution further comprises:
assuming a potential distribution along the longitudinal direction;
simulating a first set of waveforms corresponding to the potential distribution that is assumed;
simulating a second set of waveforms corresponding to a set of measured energy filter values;
altering the first set of waveforms to respectively match with the second set of waveforms; and
recalculating the potential distribution based on the altered first set of waveforms.

16. The non-transitory machine-readable storage medium of claim 15 , wherein the operation further comprises: extracting depth values from the measured energy filter values.

17. The non-transitory machine-readable storage medium of claim 16 , wherein the extracted depth values are associated respectively with the plurality of SEM images.

18. The non-transitory machine-readable storage medium of claim 17 , wherein the 3D profile is obtained by combining the plurality of SEM images at the respective depth values.

19. The non-transitory machine-readable storage medium of claim 14 , wherein a frame registration algorithm is applied to the plurality of SEM images.

20. The non-transitory machine-readable storage medium of claim 19 , wherein the frame registration algorithm is based on an inherent symmetry in the 3D feature.

Assignees

• Applied Materials Inc

Inventors

• Yuli Ofer
• Banna Samer

Classifications

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H01J37/265 Primary

  Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination · CPC title

• H01J2237/221

  Image processing · CPC title

• H01J37/28

  with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title