Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method

Patent metadata

Field	Value
Publication number	US-11137686-B2
Application number	US-201615756463-A
Country	US
Kind code	B2
Filing date	Aug 25, 2016
Priority date	Aug 31, 2015
Publication date	Oct 5, 2021
Grant date	Oct 5, 2021

Abstract

The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1),wherein R1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, in which at least one m2 is an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R1 and R2 is a group having an iodine atom.

First claim

The invention claimed is:

1. A method for forming an underlayer film for lithography, comprising
forming an underlayer film on a substrate using a composition for forming an underlayer film, the composition including a solvent and a material for forming an underlayer film; and
forming at least one photoresist layer on the underlayer film,
the material for forming an underlayer film including at least any of a compound represented by following formula (1-1) or a resin comprising a structural unit derived from a compound represented by the following formula (1-1),

wherein R 1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R 3 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, or a thiol group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, each m 5 is independently an integer of 1 to 6, each m 6 is independently an integer of 0 to 5, and m 5 +m 6 is an integer of 1 to 6, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R 1 and R 3 is a group having an iodine atom.

2. The method according to claim 1 , wherein the compound represented by the formula (1-1) is a compound represented by following formula (1-2),

wherein (1-2), R 1 , R 3 , m, n and q are the same as defined above, and at least one selected from the group consisting of R 1 and R 3 is a group having an iodine atom.

3. The method according to claim 2 , wherein the compound represented by the formula (1-2) is a compound represented by following formula (1-3),

wherein q is the same as defined above, X′ represents a hydrogen atom, a halogen atom, or a monovalent group having 1 to 59 carbon atoms, each R 0 independently represents an alkyl group having 1 to 4 carbon atoms, or a halogen atom, and may be the same or different in the same naphthalene ring or benzene ring, and each p 2 is independently an integer of 0 to 5, provided that at least one selected from the group consisting of X′ and R 0 is a group having an iodine atom.

4. The method according to claim 3 , wherein the compound represented by the formula (1-3) is a compound represented by following formula (1-4),

wherein R 5 represents an iodine atom, or a monovalent group selected from a straight, branched or cyclic alkyl group having an iodine atom and having 1 to 10 carbon atoms, an aryl group having an iodine atom and having 6 to 10 carbon atoms, a heterocyclic group having an iodine atom and having 6 to 10 carbon atoms, an alkenyl group having an iodine atom and having 2 to 10 carbon atoms, and an alkoxy group having an iodine atom and having 1 to 30 carbon atoms.

5. The method according to claim 4 , wherein the compound represented by the formula (1-4) is a compound represented by following formula (1-5) or following formula (1-6),

wherein R 6 represents at least one selected from the group consisting of a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group and a hydroxy group; and k is an integer of 1 to 5 and k′ is an integer of 1 to 3, provided that at least one R 6 represents a monovalent group having an iodine atom.

6. The method according to claim 5 , wherein the compound represented by the formula (1-5) or the formula (1-6) is at least one selected from the group consisting of following compounds.

7. The method according to claim 1 , wherein the composition further includes an acid generator.

8. The method according to claim 1 , wherein the composition further includes a crosslinking agent.

9. An underlayer film for lithography, formed according to the method of claim 1 .
wherein R 1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R 2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m 2 is independently an integer of 0 to 7, in which at least one m 2 is an integer of 1 to 7, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R 1 and R 2 is a group having an iodine atom; and
a step of irradiating a predetermined region of the photoresist layer with radiation, and developing it.

10. A resist pattern forming method comprising:
a step of forming an underlayer film on a substrate using a composition for forming an underlayer film, the composition including a solvent and a material for forming an underlayer film; and
forming at least one photoresist layer on the underlayer film,
the material for forming an underlayer film including at least any of a compound represented by following formula (1-1) or a resin comprising a structural unit derived from a compound represented by the following formula (1-1),

wherein R 1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R 3 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, or a thiol group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets may be the same or different when n is an integer of 2 or more, each m 5 is independently an integer of 1 to 6, each m 6 is independently an integer of 0 to 5, and m 5 +m 6 is an integer of 1 to 6, and each q is independently 0 or 1, provided that at least one selected from the group consisting of R 1 and R 3 is a group having an iodine atom; and
a step of irradiating a predetermined region of the photoresist layer with radiation, and developing it.

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Toida Takumi
• Makinoshima Takashi
• Sato Takashi
• Echigo Masatoshi

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• C07D405/04 Primary

  directly linked by a ring-member-to-ring-member bond · CPC title

• C08G2261/59

  Stability · CPC title

• C09D165/00

  Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain (C09D107/00 - C09D157/00, C09D161/00 take precedence); Coating compositions based on derivatives of such polymers · CPC title

• C08G61/122

  derived from five- or six-membered heterocyclic compounds, other than imides · CPC title