Crystalline semiconductor film, plate-like body and semiconductor device

Patent metadata

Field	Value
Publication number	US-11069781-B2
Application number	US-201916534318-A
Country	US
Kind code	B2
Filing date	Aug 7, 2019
Priority date	Jul 22, 2014
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a crystalline semiconductor film that comprises a corundum structured oxide semiconductor as a major component, the corundum structured oxide semiconductor that comprises an oxide comprising gallium and/or indium, and a thickness of the crystalline semiconductor film that is 1 μm or more;
a Schottky electrode, the Schottky electrode that is arranged on the crystalline semiconductor film; and
wherein the semiconductor device further has a diode structure.

2. The semiconductor device of claim 1 ,
wherein the thickness of the crystalline semiconductor film is 7.6 μm or more.

3. The semiconductor device of claim 1 ,
wherein the crystalline semiconductor film includes a dopant.

4. The semiconductor device of claim 1 ,
wherein a surface area of the crystalline semiconductor film is 9 mm 2 or more.

5. The semiconductor device of claim 1 ,
wherein the corundum structured oxide semiconductor further includes a metal selected from among Al, Fe, Cr, V, Rh, Ni and Co.

6. The semiconductor device of claim 1 ,
wherein the crystalline semiconductor film includes gallium at an atomic ratio of 0.5 or more in the metal elements included in the crystalline semiconductor film.

7. The semiconductor device of claim 1 , further including:
an Ohmic electrode,
wherein the Ohmic electrode is arranged on the crystalline semiconductor film.

8. The semiconductor device of claim 7 ,
wherein the Schottky electrode is arranged at a first side of the crystalline semiconductor film, and the Ohmic electrode is arranged at a second side of the crystalline semiconductor film,
wherein the second side is an opposite side to the first side.

9. The semiconductor device of claim 1 ,
wherein the crystalline semiconductor film includes a first layer and a second layer, and wherein the first layer is an n− type semiconductor layer and the second layer is an n+ type semiconductor layer.

10. The semiconductor device of claim 1 , further including:
an insulating layer, and
at least a part of the insulating layer is arranged between the crystalline semiconductor film and the Schottky electrode.

11. The semiconductor device of claim 1 ,
wherein the semiconductor device is a vertical device.

12. The semiconductor device of claim 1 ,
wherein the semiconductor device is a diode.

13. A semiconductor device comprising:
a crystalline semiconductor film that comprises a corundum structured oxide semiconductor as a major component, the corundum structured oxide semiconductor that comprises an oxide comprising gallium and/or indium, and a thickness of the crystalline semiconductor film that is 1 μm or more;
a Schottky electrode that is arranged on the crystalline semiconductor film,
the Schottky electrode that comprises at least one selected from among Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Ir, Zn, In, Pd, Nd, and Ag, and alloys thereof, tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO), polyaniline, polythiophene, and polypyrrole, and mixture thereof; and
wherein the semiconductor device further has a diode structure.

14. The semiconductor device of claim 13 ,
wherein the Schottky electrode includes at least one selected from among Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Ir, Zn, In, Pd, Nd, Ag, and alloys thereof.

15. The semiconductor device of claim 13 ,
wherein the corundum structured oxide semiconductor further includes a metal selected from among Al, Fe, Cr, V, Rh, Ni and Co.

16. The semiconductor device of claim 13 ,
wherein the crystalline semiconductor film includes gallium at an atomic ratio of 0.5 or more in the metal elements included in the crystalline semiconductor film.

17. The semiconductor device of claim 13 ,
wherein the crystalline semiconductor film includes a first layer and a second layer, and wherein the first layer is an n− type semiconductor layer and the second layer is an n+ type semiconductor layer.

18. The semiconductor device of claim 13 ,
wherein a surface area of the crystalline semiconductor film is 9 mm 2 or more.

19. The semiconductor device of claim 13 , further including:
an Ohmic electrode,
wherein the Ohmic electrode is arranged on the crystalline semiconductor film.

20. The semiconductor device of claim 19 ,
wherein the Schottky electrode is arranged at a first side of the crystalline semiconductor film, and the Ohmic electrode is arranged at a second side of the crystalline semiconductor film, and
wherein the second side is an opposite side to the first side.

Assignees

• Flosfia Inc

Inventors

• Hitora Toshimi
• Oda Masaya
• Takatsuka Akio

Classifications

• H10P14/3441

  Conductivity type · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title