Ga2O3 SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR

Patent metadata

Field	Value
Publication number	US-2016017512-A1
Application number	US-201414772885-A
Country	US
Kind code	A1
Filing date	Feb 26, 2014
Priority date	Mar 4, 2013
Publication date	Jan 21, 2016
Grant date	—

Abstract

Provided are a Ga 2 O 3 -based single crystal substrate including a Ga 2 O 3 -based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga 2 O 3 -based single crystal while adding a Fe to a Ga 2 O 3 -based raw material, the Ga 2 O 3 -based single crystal ( 5 ) including the Fe at a concentration higher than that of a donor impurity mixed in the Ga 2 O 3 -based raw material, and cutting out the Ga 2 O 3 -based single crystal substrate from the Ga 2 O 3 -based single crystal ( 5 ).

First claim

1 . A production method for a Ga 2 O 3 -based single crystal substrate, comprising:
growing a Ga 2 O 3 -based single crystal while adding a Fe to a Ga 2 O 3 -based raw material, the Ga 2 O 3 -based single crystal comprising the Fe at a concentration higher than that of a donor impurity mixed in the Ga 2 O 3 -based raw material; and cutting out the Ga 2 O 3 -based single crystal substrate from the Ga 2 O 3 -based single crystal.

2 . The production method for a Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein the Ga 2 O 3 -based raw material has a purity of 99.999 mass %, and
wherein the Ga 2 O 3 -based single crystal grown comprises the Fe at a concentration of not less than 5×10 17 cm −3 .

3 . The production method for a Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein the Ga 2 O 3 -based raw material has a purity of 99.99 mass %, and
wherein the Ga 2 O 3 -based single crystal grown comprises the Fe at a concentration of not less than 5×10 18 cm −3 .

4 . The production method for a Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein the donor impurity comprises Si.

5 . The production method for a Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein a principal surface of the Ga 2 O 3 single crystal substrate has a size and a shape large enough to include a perfect circle of not less than 10 mm in diameter.

6 . A Ga 2 O 3 -based single crystal substrate, comprising a Ga 2 O 3 -based single crystal comprising a donor impurity and Fe,
wherein a concentration of the Fe is higher than a concentration of the donor impurity.

7 . The Ga 2 O 3 -based single crystal substrate according to claim 6 , wherein the donor impurity comprises Si.

8 . The Ga 2 O 3 -based single crystal substrate according to claim 6 , further comprising a principal surface that has a size and a shape large enough to include a perfect circle of not less than 10 mm in diameter.

9 . The Ga 2 O 3 -based single crystal substrate according to claim 7 , further comprising a principal surface that has a size and a shape large enough to include a perfect circle of not less than 10 mm in diameter.

10 . The production method for a Ga 2 O 3 -based single crystal substrate according to claim 2 , wherein the donor impurity comprises Si.

11 . The production method for a Ga 2 O 3 -based single crystal substrate according to claim 3 , wherein the donor impurity comprises Si.

12 . The production method for a Ga 2 O 3 -based single crystal substrate according to claim 2 , wherein a principal surface of the Ga 2 O 3 single crystal substrate has a size and a shape large enough to include a perfect circle of not less than 10 mm in diameter.

13 . The production method for a Ga 2 O 3 -based single crystal substrate according to claim 3 , wherein a principal surface of the Ga 2 O 3 single crystal substrate has a size and a shape large enough to include a perfect circle of not less than 10 mm in diameter.

Assignees

• Tamura Seisakusho Kk

Inventors

• Sasaki Kohei

Classifications

• C30B13/10 Primary

  with addition of doping materials · CPC title

• C30B29/16

  Oxides · CPC title

• C30B13/30

  Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal · CPC title

• C30B13/32

  Mechanisms for moving either the charge or the heater · CPC title

• C30B13/24

  using electromagnetic waves · CPC title