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Ga2O3-based single crystal substrate, and production method therefor
US10161058B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10161058-B2 |
| Application number | US-201414772885-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 26, 2014 |
| Priority date | Mar 4, 2013 |
| Publication date | Dec 25, 2018 |
| Grant date | Dec 25, 2018 |
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Abstract
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Provided are a Ga2O3-based single crystal substrate including a Ga2O3-based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga2O3-based single crystal while adding a Fe to a Ga2O3-based raw material, the Ga2O3-based single crystal (5) including the Fe at a concentration higher than that of a donor impurity mixed in the Ga2O3-based raw material, and cutting out the Ga2O3-based single crystal substrate from the Ga2O3-based single crystal (5).
First claim
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The invention claimed is: 1. A Ga 2 O 3 -based single crystal substrate consisting of a Ga 2 O 3 -based single crystal comprising a donor impurity and Fe, wherein a concentration of the Fe is higher than a concentration of the donor impurity to increase a resistance value of the substrate, and wherein the donor impurity is Si, and the Fe concentration in the Ga 2 O 3 -based single crystal is not less than 0.001 mol % and is not greater than 0.05 mol %. 2. The Ga 2 O 3 -based single crystal substrate according to claim 1 , further comprising a principal surface that has a size and a shape large enough to include a perfect circle of not less than 10 mm in diameter. 3. The Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein the substrate resistivity is about 2×10 12 Ωcm. 4. The Ga 2 O 3 -based single crystal substrate according to claim 1 , wherein the Fe concentration is 0.01 to 0.05 mol %.
Assignees
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Classifications
- C30B13/10Primary
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Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal · CPC title
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- What does patent US10161058B2 cover?
- Provided are a Ga2O3-based single crystal substrate including a Ga2O3-based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga2O3-based single crystal while adding a Fe to a Ga2O3-based raw material, the Ga2O3-based single c…
- Who is the assignee on this patent?
- Tamura Seisakusho Kk
- What technology area does this patent fall under?
- Primary CPC classification C30B13/10. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 25 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).