Signal generating device and method of generating temperature-dependent signal

Patent metadata

Field	Value
Publication number	US-11068011-B2
Application number	US-201916668854-A
Country	US
Kind code	B2
Filing date	Oct 30, 2019
Priority date	Oct 30, 2019
Publication date	Jul 20, 2021
Grant date	Jul 20, 2021

Abstract

A signal generating device includes: a first circuit arranged to generate a first current to a first bipolar junction transistor therein; a second circuit coupled to the first circuit via an output terminal for generating a second current to a second BJT therein; and a first control circuit coupled to the first circuit and the second circuit, for generating a first adjusting current and a second adjusting current to the first circuit and the second circuit for adjusting the first current and the second current such that the first circuit and the second circuit outputs a temperature-dependent signal on the output terminal.

First claim

What is claimed is:

1. A signal generating device, comprising:
a first circuit, coupled between a first reference voltage and a second reference voltage, and arranged to generate a first current to a first bipolar junction transistor (BJT) therein;
a second circuit, coupled between the first reference voltage and the second reference voltage, and coupled to the first circuit via an output terminal, for generating a second current to a second BJT therein; and
a first control circuit, coupled to an emitter of the first BJT and the second circuit, for generating a first adjusting current and a second adjusting current to the first circuit and the second circuit for adjusting the first current and the second current such that the first circuit and the second circuit outputs a temperature-dependent signal on the output terminal; and
the first control circuit comprises:
a first active device, having a first connecting terminal coupled to the emitter of the first BJT, a second connecting terminal coupled to a base of the first BJT, for generating the first adjusting current;
a second active device, having a first connecting terminal coupled to a emitter of the second BJT, a second connecting terminal coupled to a base of the second BJT, and a control terminal coupled to a control terminal of the first active device, for generating the second adjusting current;
a third active device, having a first connecting terminal coupled to the base of the first BJT, a second connecting terminal coupled to a second reference voltage, for generating a third current;
a fourth active device, having a first connecting terminal coupled to the base of the second BJT, a second connecting terminal coupled to the second reference voltage, and a control terminal coupled to a control terminal of the third active device, for generating a fourth current; and
a first differential amplifier, having an inverting input terminal coupled to the base of the first BJT, a non-inverting input terminal coupled to the base of the second BJT, and an output terminal coupled to the control terminal of the first active device.

2. The signal generating device of claim 1 , further comprising:
a second control circuit, coupled to the first circuit and the second circuit, for controlling the temperature-dependent signal according to the first current and the second current.

3. The signal generating device of claim 1 , wherein the first circuit comprises:
a first field-effect transistor (FET), having a first connecting terminal coupled to the first reference voltage, a control terminal coupled to the output terminal;
the first BJT, having the emitter coupled to a second connecting terminal of the first FET, a collector coupled to the second reference voltage, and the base coupled to a first base signal;
the second circuit comprises:
a second FET, having a first connecting terminal coupled to the first reference voltage, a control terminal coupled to the output terminal;
a first resistor, having a first terminal coupled to a second connecting terminal of the second FET;
the second BJT, having the emitter coupled to a second terminal of the resistor, a collector coupled to the second reference voltage, and the base coupled to a second base signal.

4. The signal generating device of claim 3 , wherein the first FET and the second FET are p-type FET, the first BJT and the second BJT are p-type BJT, and the first active device, the second active device, the third active device, and the fourth active device are n-type FET.

5. The signal generating device of claim 3 , wherein the first control circuit further comprises:
a first chopper, coupled to the output terminal of the first differential amplifier;
a second chopper, having a first side coupled to the inverting input terminal and the non-inverting input terminal of the first differential amplifier, a second side coupled to the base of the first BJT and the base of the second BJT; and
a first matching device, having a first side coupled to the base of the first BJT and the base of the second BJT, and a second side coupled to the first connecting terminal of the third active device and the first connecting terminal of the fourth active device.

6. The signal generating device of claim 3 , further comprising:
a third circuit, coupled to the output terminal and the first control circuit, for generating a fifth current according to the temperature-dependent signal;
wherein the third active device generates the third current and the fourth active device generates the fourth current according to the fifth current.

7. The signal generating device of claim 6 , wherein the third circuit comprises:
a third FET, having a first connecting terminal coupled to the first reference voltage, a control terminal coupled to the output terminal; and
a fourth FET, having a first connecting terminal coupled to a second connecting terminal of the third FET, a second connecting terminal coupled to the second reference voltage, and a control terminal coupled to the control terminal of the third active device.

8. The signal generating device of claim 7 , wherein the third FET is p-type FET, and the fourth FET is n-type FET.

9. The signal generating device of claim 7 , further comprising:
a fourth circuit, coupled to the output terminal, for generating a temperature-dependent current according to the temperature-dependent signal.

10. The signal generating device of claim 9 , wherein the fourth circuit comprises:
a fifth FET, having a first connecting terminal coupled to the first reference voltage, a second connecting terminal outputting the temperature-dependent current, and a control terminal coupled to the output terminal.

11. The signal generating device of claim 10 , wherein the second control circuit comprises:
a second differential amplifier, having an inverting input terminal coupled to the emitter of the first BJT, a non-inverting input terminal coupled to the first terminal of the resistor, and an output terminal coupled to the control terminal of the first FET;
a first matching device, having a first side coupled to the second connecting terminal of the first FET, the second connecting terminal of the second FET, the second connecting terminal of the third FET, and the second connecting terminal of the fifth FET, and having a second side coupled to the emitter of the first BJT, the first terminal of the resistor, the first connecting terminal of the fourth FET, and for outputting the temperature-dependent current;
a first chopper, coupled to the output terminal of the second differential amplifier; and
a second chopper, having a first side coupled to the inverting input terminal and the non-inverting input terminal of the second differential amplifier, a second side coupled to the emitter of the first BJT and the first terminal of the resistor.

12. The signal generating device of claim 6 , further comprising:
a fourth circuit, coupled to the output terminal, for generating an output voltage according to the temperature-dependent signal.

13. The signal generating device of claim 12 , wherein the fourth circuit comprises:
a third FET, having a first connecting terminal coupled to the first reference voltage, a control terminal coupled to the output terminal;
a second resistor, having a first terminal coupled to a second connecting terminal of the third FET, for outputting the output voltage; and
a third BJT, having an emitter coupled to a second terminal of the second resistor, a collector coupled to the second reference voltage, and a base coupled to the second reference voltage.

14. A bandgap reference device, compr

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tai Chia Liang

Classifications

• G05F3/267 Primary

  using both bipolar and field-effect technology · CPC title

• H03K3/021

  by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT · CPC title

• G05F3/30 Primary

  Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities (G05F3/26 takes precedence) · CPC title

• G05F3/26

  Current mirrors · CPC title

• H03K3/011

  Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature {(to maintain energy constant H03K3/015)} · CPC title